IRFC9 Search Results

Contextual Info: INTERNATIONAL RECTIFIER 2bE D m MÔSSMS2 OOlOHbì T • Data Sheet No. PD-5.015B t - zü-sli .„iternational Rectifier HEXFET Power Module CPY300 Series 3-Phase Bridges Product Summary Description/Features The CPY300 series of H EX FE T power modules are

1RF520

Abstract: 1RFP460 1RFP150 IRF9540 equivalent irfp450 equivalent 1rfbc20 IRF9640 equivalent 1RFP054 1RFPG50 IRFP260 equivalent
Contextual Info: International HEXFET Power MOSFETs I ö R Rectifier HEX Size Part Number VDS Recommended Source Bonding Wire RDS on Die Outline Figure m|s mm Equivalent Device Type HEXFET® Die 2 IRFC420 500 3 D9 8 0.2 *> IRFCC20 600 4.4 DIO 8 0.2 1RFBC20 2 IRFCE20 800

IRFT003

Abstract: automatic volume control using lm358 IRFT003http://datasheet.datasheetarchive.com/originals/scans/Scans-021/ScansEX27879.pdf disadvantages of automatic room power control CPY203E lm358 current sense 10a disadvantages of automatic room control IRCC034 LM324 pin configuration of TLC271
Contextual Info: INTERNATIONAL RECTIFIER bSE D • 4ÛS5MS5 QQlbSOB 3SÔ ■ INR Data Sheet No. PD-5.014D International [^Rectifier HEXFET Power Module CPY203E & IRFT003 Power H-Brldges Description/Featu res Product Summary The CPY203E and the IRFT003 are intended for use

IRC540 equivalent

Abstract: IRFC9034 irfc9024 IRFC9230 IRLC140 IRFC9220 IRLC120 IRF9540 equivalent IRF9640 equivalent IRL530 equivalent
Contextual Info: H EXFET International Power MOSFETs Table I. HEXFET III Die Continued HEX Size Part Number VDS RDS(on) Max Die (1) Outline Figure S Ö H R e C t if ie r Recomm. Source Bonding Wire mils I Equivalent Device mm type P-Channel HEXFETs 1 1 1 2 2 2 3 3 3 4 4

1rlz44

Abstract: 1RL530 1RLZ34 irfc9024 1RL520 IRFC9014 IRFC RF9620
Contextual Info: International IÖ R Rectifier HEX Size Part Number HEXFETRPower MOSFETs V ds «DSM Recommended Source Bonding Wire Die Outline Figure mi|s mm Equivalent Device Type HEXFET Die 3 IRFC 9 23 0 -200 0.8 D4I 8 0.2 3 T ÌRFC9130 -I00 0.3 D40 in 0.25 [RF9530 IRFC 9 2 2 0 *

irfc140

Abstract: IRFC9230 IRFC9140 IRFC9240 IRFC120 IRFC330 IRFC420 IRFC340 IRFC9130 irfc230
Contextual Info: SURFACE MOUNT DEVICES o PEAK RDS ON DEVICE B V o ss *D @0.5 (D PACKAGE PAK 1 TYPE VOLTS AMPS OHMS CHIP SNLC120 100 9.2 0.27 IRFC120 SNLC220 200 5.0 0.08 IRFC220 SNLC320 400 3.3 1.80 IRFC320 SNLC420 500 2.5 3.08 IRFC420 SNLC130 100 200 14.0 0.16 IRFC130 9.0

CPY203E

Abstract: IRFC9130
Contextual Info: INTE RN ATI ON AL RECTIFIER SbE D 4055450 001G4b3 1 Data Sheet No. PD-5.014B International Rectifier T - & - S L 1 HEXFET Power Module CPY200 Series Power H Bridges Product Summary Description/Features The CPY200 series of H EXFET power modules along with the IRFT003 are intended for use in driving subfractional horsepower DC motors and stepper motors,

irft 200

Abstract: IRFT002 irfc9024 HEXFET Power MOSFET P-Channel IRFT004 IRFT001 irfc9
Contextual Info: INTERNATIONAL RECTIFIER 2bE D • 4055452 QG1Q44B 3 ■ Preliminary Data Sheet No. PD-S.021B -3*?-a 7 International H>! Rectifier HEXFET Power Module IRFT Series 3-Phase Bridges Product Summary Description/Features The IRFT series of HEXFET power modules are

IRFC9024

Abstract: CPY302F HEXFET Power MOSFET P-Channel 1000 V N-channel mosfet IRFC024 302F 60V Single N-Channel HEXFET Power MOSFET Scans-007982 HEXFET Characteristics
Contextual Info: INTERNATIONAL RECTIFIER bSE J> m 4055*452 Oülb'ÎD'l Ô7b • INR Data Sheet No. PD-5.015D International [^Rectifier HEXFET Power Module CPY302F 3-Phase Bridges Description/Features Product Summary The CPY302F HEXFET power module is intended for use in driving sub-fractional horsepower DC brushless

IRF1644

Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.

IRFC44

Abstract: STFM150 shf206 IRFC460 IRFC9140 IRFC9240 IRFC340 IRFC440
Contextual Info: MOSFETS PACKAGE TO-254 RDS ON •d @ 0.5 *D CONTINUOUS >D VOLTS OHMS AMP WATTS CHIP 100 200 200 400 400 400 500 500 500 500 600 600 600 800 800 900 900 1000 1000 0.065 0.2 0.1 0.56 0.3 0,2 0.85 0.4 0.27 0.23 0.7 0.6 0.36 1.2 1.8 2.0 1.0 2.4 1.1 25.0 15.0

IRFC9130

Abstract: SNF80504 IRFC360 IRFC250 SPF8
Contextual Info: I to MOSFETS HI Ik A o s DUAL N CHANNEL PO W ER M O SFETS PACKAGE 6 PIN SIP TO-61 ISOLATED RDS(ON *D DEVICE bvdss @ 0 .5 ' d CONTINUOUS Pd TYPE VOLTS OHMS OHMS WATTS CHIP SND600 600 0.6 IXTD15N60 SND500 500 0.4 11.0 14.0 125 125 IRFC450 SND460 600 20.0 125

IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.

IRFC9130

Abstract: IRFC9140
Contextual Info: INTERN ATI ONAL RECTIFIER SbE D • 4flS54S2 QG1G101 fl ■ HEXFET Die N-Channel International l&R| Rectifier > Electrical Probe Specifications for P-Channel H E X F E T f & III Power M O S FE T Die Recommended Bond Wire S i n Hex Size 1 2 3 4 Part Number

IRC540 equivalent

Abstract: IRF9540 equivalent IRL530 equivalent IRF9640 equivalent IRLC140 IRLC120 IRFC9034 irfc9120 IRFC9110 IRLC034
Contextual Info: I n t e r n a t i o n a l R e c t i f ie r n sa H HEXFET Power MOSFETS HEX Sia PartNumber Recommended Source Bonding Win mis mm Vos R0S on M" Die Olitine Rgurt -60 -100 -200 -60 -100 -200 -60 -100 -200 -100 -200 0.500 1.200 3.000 0.280 0.600 1.500 0.140

IRFBE40

Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
Contextual Info: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800

IRFC9140R

Abstract: IRFCE40 irfcg40 irfc140 IRFCF30 IRFC9140 IXTD11N80
Contextual Info: MOSFETS A N CH A N N EL PO W ER M O SFETS Mb PACKAGE 10-257 DEVICE TYPE SNF31Û40 SNF30940 SNF30824 SNF30828 SNF3Q613 SNF44Ö SNF340 SNF240 SNF140 ROS (ON @0.5 *0 OHMS 4.0 4.0 2.4 3.2 1.3 0.86 0.56 0.19 0.095 *0 CONTINUOUS AMP 3.3 3.3 4.3 4.0 5.5 8.0 10.0

IRFT002

Abstract: irfc9024 IRFC9120 IRFT001 IRFC120 HEXFET Characteristics irfc024 60V Single N-Channel HEXFET Power MOSFET HEXFET Power MOSFET P-Channel
Contextual Info: INTERNATIONAL RECTIFIER bSE » • 4flS5MS2 G d l b t m 0T7 H I N R Preliminary Data Sheet No. PD-5.021D International S Rectifier HEXFET Power Module IRFT001 & IRFT002 3-Phase Bridges Product Summary Description/Features The IRFT series of HEXFET power modules are

406j

Abstract: 10-32 UNF 2 A 2S8 ULTRAFAST RECTIFIERS IRFC150 IXTD21N50 IRFC140 IRFC9140
Contextual Info: 27 K atrina Road Chelm sford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A PO W ERHO USE R d S(ON) @ IDcont. I»(A ) (ohms) (amps) (watts) Die 100 0.18 @ 7.0 11.0 45 IRFC130 100 200 400 500 -100 0.077 @ 16 0.18 @ 16 0.55 @ 5.5 0.85 @ 7.0

406J

Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
Contextual Info: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC

irfc110

Abstract: IRFC9230 reco relay IRLC014
Contextual Info: AN-986 ESD Testing of MOS-Gated Power Transistors HEXFET is a tradem ark o f International Rectifier By Steve C lem en te Introduction A ll se m ic o n d u c to r c o m p o n e n ts have been proven to be static sensitive to v arying degrees. U s e r’s co n cern o n this

FL110

Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case

HEXFET III - A new Generation of Power MOSFETs

Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Contextual Info: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power