1RF520
Abstract: 1RFP460 1RFP150 IRF9540 equivalent irfp450 equivalent 1rfbc20 IRF9640 equivalent 1RFP054 1RFPG50 IRFP260 equivalent
Contextual Info: International HEXFET Power MOSFETs I ö R Rectifier HEX Size Part Number VDS Recommended Source Bonding Wire RDS on Die Outline Figure m|s mm Equivalent Device Type HEXFET® Die 2 IRFC420 500 3 D9 8 0.2 *> IRFCC20 600 4.4 DIO 8 0.2 1RFBC20 2 IRFCE20 800
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irfc420irfcc20irfce20irfcf20+16irfcg201rfc034irfc120irfcg50irfcc40irfc4601rf5201rfp4601rfp150irf9540 equivalentirfp450 equivalent1rfbc20irf9640 equivalent1rfp0541rfpg50irfp260 equivalent
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IRFZ44 equivalent
Abstract: IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFC110 IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30
Contextual Info: International l SRectifier HEXFET Power MOSFETs Table I. HEXFET III Die Recomnn. Source Bondi ig Wire Die 1 Outline Figure mils mm Equivalent Device Type HEX Size Part Number V DS Z IRFC1Z0 100 2.400 D1 3 0.08 IRFS1Z0 1 1 1 1 1 IRFC014 IRFC110 IRFC210 IRFC214
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irfc014irfc110irfc210irfc214+15irfc310irfc024irfc120irfc220irfc224irfc320irfz44 equivalentirfbe30 equivalentirfbg30 equivalentirfpe40 equivalentirfp150 equivalentirfz14 equivalentirfp450 equivalentirfp250 irfp460irfce30
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1XTH5N100
Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
Contextual Info: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out line No mm mils IXTD67N10 IXTD75N10
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ixtd67n10ixtd75n10irfc250ixtd42n20+11ixtd50n20ixtd68n20irfc254ixtd40n25ixtd35m30ixtd40n301xth5n100xth6n90irfp460 equivalentixth7p50ixth10p50
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501-3B
Contextual Info: INTERNATIONAL R E C T I F I E R 2bE D • 4ÔS5452 G0 104SC1 ? ■ Data Sheet No. PD-5.013B International Rectifier 1 3 3n HEXFET Power Module _ ” - ^ CPYIOO Séries Power Half-Bridges Product Summary Description/Features
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s5452104sccpy100cpy135p+4irfc254cpy155pirfc450501-3b
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IRF1644
Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.
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100hf20-100hf160100jb05l-100jb12l10ctf10-10ctf4010ctq140+1510d05-1001010df1100f810jf1-10jf410jq030-10jq1001ojtf10-10jtf4010mq040-10mq090irf164412ctq030-12ct0045irl002431d003-31d010irkt210-16irf14016cw 78irf140-143irft003
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IRF540 n-channel MOSFET
Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.
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qd102tirf540 n-channel mosfetges 9515irf740,irf840+7irc540 equivalentrtv3140irf540 mosfet with maximum vds 30 virf540 p-channel mosfetirlc120an964irfc9140r
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GG1Q
Abstract: Cpv25 DQ1Q447 HEXFET Characteristics IRFC460
Contextual Info: INTERNATIONAL RECTIFIER 2bE T> • 4 0 55 4 5 5 DQ1Q447 Q ■ Data Sheet No. PD-5.Q20B t -3 °i-a .ri international S Rectifier HEXFET Power Module CPW200 Series Power H-Bridges Description/Features Product Summary The CPW 200 series of HEX FE T power modules are
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dq1q447cpw200cpw235pcpw255p+7cpw256pirfc460irfc254irfc450gg1qcpv25hexfet characteristics
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IRFC9130
Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Contextual Info: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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an-955an-9860-60van-964d+10irfc9130irfc130irlc034irlc024irfcg20irfc9014irfc110irfc9230irfc9120irfc430
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IRFZ44 equivalent
Abstract: IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034
Contextual Info: I I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS BVdss Drain Sourct Vofcag* Vote PMt Numbtr Rd s m Ondate IMltMCI (Ohm) H E X -P a k M o d u l« P a ra lle l Chip N-Cham xel 60 IRFK4H054 100 IRFK4H150 200 IRFK4H250 400 IRFK4H350 500 IRFK4H450
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irfk4h054irfk4h150irfk4h250irfk4h350+16irfk4h450irfk4hc50irfk4he50irfk4j054irfk4j150irfk4j250irfz44 equivalentirfbe30 equivalentirfp260 equivalentirfc110irf634 equivalentirf540irfz48 equivalentirf*234 nirfcg50irfc034
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FL110
Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case
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ot-89ircc044ircc140ircc240+14ircc244ircc340ircc440ircc054fl110ll110irf7408lr014irc540 equivalentirl1z14girfc024irfbe30 equivalentirfcg50irfbc10lc
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HEXFET III - A new Generation of Power MOSFETs
Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Contextual Info: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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an-955an-986an-966-250v+9an-964dhexfet iii - a new generation of power mosfetsirf 1490irfc90241000v p-channel mosfetapplication new hexfetan966transistor 9527irfc210
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