12N50 Search Results
12N50 Datasheets (24)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 12N-50 | Inmet | ATTENUATOR | Scan | 317.43KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 33.22KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50C1 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 33.22KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50C1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 33.22KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50E1 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 33.22KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50E1D | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 33.22KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N-50F | Inmet | ATTENUATOR | Scan | 317.43KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N-50M | Inmet | ATTENUATOR | Scan | 317.43KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50W-03 | Inmet | ATTENUATOR UP to 18 GHz 50 Watts | Scan | 353.92KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50W-03F | Inmet | ATTENUATOR UP to 18 GHz 50 Watts | Scan | 353.92KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50W-03M | Inmet | ATTENUATOR UP to 18 GHz 50 Watts | Scan | 353.92KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50W-06 | Inmet | ATTENUATOR UP to 18 GHz 50 Watts | Scan | 353.92KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50W-06F | Inmet | ATTENUATOR UP to 18 GHz 50 Watts | Scan | 353.92KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50W-06M | Inmet | ATTENUATOR UP to 18 GHz 50 Watts | Scan | 353.92KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 12N50W-10 | Inmet | ATTENUATOR UP to 18 GHz 50 Watts | Scan | 353.92KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50W-10F | Inmet | ATTENUATOR UP to 18 GHz 50 Watts | Scan | 353.92KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50W-20 | Inmet | ATTENUATOR UP to 18 GHz 50 Watts | Scan | 353.92KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50W-20F | Inmet | ATTENUATOR UP to 18 GHz 50 Watts | Scan | 353.92KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50W-30 | Inmet | ATTENUATOR UP to 18 GHz 50 Watts | Scan | 353.92KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 12N50W-30F | Inmet | ATTENUATOR UP to 18 GHz 50 Watts | Scan | 353.92KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
12N50 Price and Stock
Vishay Intertechnologies SIHD12N50E-GE3MOSFETs 500V Vds 30V Vgs DPAK (TO-252) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHD12N50E-GE3 | 4,684 |
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Buy Now | |||||||
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SIHD12N50E-GE3 | Tube | 3,000 | 50 |
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Buy Now | |||||
STMicroelectronics STD12N50DM2MOSFETs N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STD12N50DM2 | 3,771 |
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Buy Now | |||||||
Vishay Intertechnologies SIHP12N50E-GE3MOSFETs 500V Vds 30V Vgs TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHP12N50E-GE3 | 3,524 |
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Buy Now | |||||||
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SIHP12N50E-GE3 | Tube | 1,000 |
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Buy Now | ||||||
TTM Technologies C12N50Z4High Frequency/RF Resistors |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C12N50Z4 | 1,808 |
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Vishay Intertechnologies SIHP12N50E-BE3MOSFETs TO220 500V 10.5A N-CH MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHP12N50E-BE3 | 1,582 |
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Buy Now | |||||||
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SIHP12N50E-BE3 | Tube | 1,600 | 50 |
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Buy Now | |||||
12N50 Datasheets Context Search
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Contextual Info: Photoelectric sensors FNDM 12N5001/S35A Diffuse sensors with foreground suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type foreground suppression light source pulsed red LED |
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12N5001/S35A | |
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Contextual Info: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED |
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12N5001/S35A | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N50 Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum |
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12N50 12N50 QW-R502-528 | |
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Contextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25 |
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12N50P 12N50P O-263 O-220 | |
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Contextual Info: Photoelectric sensors FNDM 12N5001/S35A Diffuse sensors with foreground suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type foreground suppression light source pulsed red LED |
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12N5001/S35A | |
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Contextual Info: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED |
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12N5001/S35A | |
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Contextual Info: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED |
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12N5001/S35A | |
12n50Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N50 Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state |
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12N50 12N50 QW-R502-528 | |
IXTP12N50PMContextual Info: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 6 ≤ 0.5 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C |
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12N50PM O-220 405B2 IXTP12N50PM | |
12N50PContextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTI 12N50P IXTP 12N50P = 500 = 12 ≤ 0.5 VDSS ID25 RDS on V A Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 |
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12N50P 12N50P O-263 O-263 O-220 O-220) | |
MOSFET IXYS TO-263Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 RDS on = 500 V = 12 A Ω = 500 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ |
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12N50P 12N50P O-220 O-263 405B2 MOSFET IXYS TO-263 | |
12N50PContextual Info: PolarHVTM HiPerFET Power MOSFET IXFA 12N50P IXFP 12N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V |
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12N50P 12N50P | |
12n50Contextual Info: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
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12N5001 12n50 | |
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Contextual Info: Photoelectric sensors FNDM 12N5001/S35A Diffuse sensors with foreground suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type foreground suppression light source pulsed red LED |
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12N5001/S35A | |
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Contextual Info: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
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12N5001 | |
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Contextual Info: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
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12N5001 | |
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Contextual Info: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED |
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12N5001/S35A | |
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Contextual Info: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
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12N5001 | |
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Contextual Info: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED |
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12N5001/S35A | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N50 Preliminary Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state |
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12N50 12N50 QW-R502-528 | |
12n50Contextual Info: IXFA 12N50P IXFP 12N50P Advance Technical Information PolarHVTM Power MOSFET IXFA 12N50P IXFP 12N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Maximum Ratings = 500 = 12 ≤ 0.5 ≤ 200 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C |
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12N50P O-220 12n50 | |
2N508B
Abstract: 2N5088 national 2N5089 NATIONAL SEMICONDUCTOR 2N5088 2N5089 MMBT5088 MMBT5089 T092 LS5911
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2N5088 2N5089 MMBT5088 MMBT5089 2N5089 b5D1130 2N508B 2N5088 national 2N5089 NATIONAL SEMICONDUCTOR MMBT5089 T092 LS5911 | |
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Contextual Info: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw |
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12N5001 | |
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Contextual Info: Photoelectric sensors FNDM 12N5001/S35A SmartReflect Light barriers dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type light barrier light source pulsed red LED background position Sde 20 . 80 mm |
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12N5001/S35A | |