12N50 Search Results

12N50 Datasheets (24)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
12N-50	Inmet	ATTENUATOR	Scan	PDF	317.43KB	1
12N50	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N50C1	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N50C1D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N50E1	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N50E1D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.22KB	1
12N-50F	Inmet	ATTENUATOR	Scan	PDF	317.43KB	1
12N-50M	Inmet	ATTENUATOR	Scan	PDF	317.43KB	1
12N50W-03	Inmet	ATTENUATOR UP to 18 GHz 50 Watts	Scan	PDF	353.92KB	1
12N50W-03F	Inmet	ATTENUATOR UP to 18 GHz 50 Watts	Scan	PDF	353.92KB	1
12N50W-03M	Inmet	ATTENUATOR UP to 18 GHz 50 Watts	Scan	PDF	353.92KB	1
12N50W-06	Inmet	ATTENUATOR UP to 18 GHz 50 Watts	Scan	PDF	353.92KB	1
12N50W-06F	Inmet	ATTENUATOR UP to 18 GHz 50 Watts	Scan	PDF	353.92KB	1
12N50W-06M	Inmet	ATTENUATOR UP to 18 GHz 50 Watts	Scan	PDF	353.92KB	1

12N50W-10	Inmet	ATTENUATOR UP to 18 GHz 50 Watts	Scan	PDF	353.92KB	1
12N50W-10F	Inmet	ATTENUATOR UP to 18 GHz 50 Watts	Scan	PDF	353.92KB	1
12N50W-20	Inmet	ATTENUATOR UP to 18 GHz 50 Watts	Scan	PDF	353.92KB	1
12N50W-20F	Inmet	ATTENUATOR UP to 18 GHz 50 Watts	Scan	PDF	353.92KB	1
12N50W-30	Inmet	ATTENUATOR UP to 18 GHz 50 Watts	Scan	PDF	353.92KB	1
12N50W-30F	Inmet	ATTENUATOR UP to 18 GHz 50 Watts	Scan	PDF	353.92KB	1

12N50 Price and Stock

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onsemi FDB12N50TM Power MOSFET N-Channel UniFETTM 500 V 11.5 A 650 mΩ D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	FDB12N50TM					1 $1.76 10 $1.76 100 $1.76 1000 $1.11 10000 $1.11	Buy Now
Rochester Electronics	FDB12N50TM		573		1	1 - 10 - 100 $1.34 1000 $1.11 10000 $0.99	Buy Now
TME	FDB12N50TM				800	1 - 10 - 100 - 1000 $1.19 10000 $1.19	Get Quote
Ameya Holding Limited	FDB12N50TM		15,300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FDB12N50TM			21 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	FDB12N50TM			22 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Maritex	FDB12N50TM		1,466		1	1 $1.88 10 $1.63 100 $1.17 1000 $0.95 10000 $0.95	Buy Now
Wuhan P&S	FDB12N50TM		14,400		1	1 $2.62 10 $2.62 100 $1.67 1000 $1.27 10000 $1.27	Buy Now
OptiFuse MOCB-12-N-50A Modified Reset- 10-32 Stud 12V 50A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	MOCB-12-N-50A					1 - 10 $8.75 100 $5.16 1000 $4.37 10000 $4.25	Buy Now
RS	MOCB-12-N-50A	Bulk		1 Weeks	1	1 $14.44 10 $13.00 100 $13.00 1000 $13.00 10000 $13.00	Get Quote
TME	MOCB-12-N-50A				1	1 $16.40 10 $14.60 100 $8.76 1000 $8.76 10000 $8.76	Get Quote
Relay Specialties	MOCB-12-N-50A		429		1	1 $5.80 10 $5.37 100 $4.39 1000 $4.39 10000 $4.39	Buy Now
onsemi FDPF12N50NZ Power MOSFET, N-Channel, UniFETTM II, 500 V, 11.5 A, 520 mO, TO-220F - Rail/Tube (Alt: FDPF12N50NZ)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FDPF12N50NZ	Tube			1,000	1 - 10 - 100 - 1000 $1.05 10000 $1.00	Get Quote
Rochester Electronics	FDPF12N50NZ		133		1	1 - 10 - 100 $1.10 1000 $0.91 10000 $0.81	Buy Now
Flip Electronics	FDPF12N50NZ		1,000			1 $0.79 10 $0.79 100 $0.79 1000 $0.79 10000 $0.79	Get Quote
STMicroelectronics STF12N50M2 - Bulk (Alt: 45AC7556)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	STF12N50M2	Bulk			1	1 $2.51 10 $1.78 100 $1.36 1000 $1.16 10000 $1.11	Get Quote
	STF12N50M2	Tube		36 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.60	Buy Now
Newark	STF12N50M2	Bulk	1,018		1	1 $2.51 10 $1.78 100 $1.36 1000 $1.16 10000 $1.11	Buy Now
STMicroelectronics	STF12N50M2				1	1 $1.72 10 $0.93 100 $0.88 1000 $0.71 10000 $0.71	Buy Now
TME	STF12N50M2				1	1 $2.23 10 $1.09 100 $0.96 1000 $0.96 10000 $0.96	Get Quote
ComSIT USA	STF12N50M2		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	STF12N50M2		2,000	25 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STF12N50M2			25 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	STF12N50M2		6,570			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SIHD12N50E-GE3 N-CHANNEL 500V - Tape and Reel (Alt: SIHD12N50E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHD12N50E-GE3	Tape & Reel		31 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.71	Buy Now
Newark ()	SIHD12N50E-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $1.29	Buy Now
	SIHD12N50E-GE3	Tape & Reel			100	1 - 10 - 100 $1.20 1000 $0.92 10000 $0.89	Buy Now
	SIHD12N50E-GE3	Cut Tape			1	1 $2.71 10 $2.71 100 $1.20 1000 $0.92 10000 $0.89	Buy Now
TTI	SIHD12N50E-GE3	Tube	2,550		50	1 - 10 - 100 $1.07 1000 $0.92 10000 $0.82	Buy Now
TME	SIHD12N50E-GE3				1	1 $2.52 10 $1.33 100 $1.09 1000 $0.95 10000 $0.95	Get Quote
EBV Elektronik	SIHD12N50E-GE3			39 Weeks	75	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 12N50 price and stock on Findchips.com

12N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Photoelectric sensors FNDM 12N5001/S35A Diffuse sensors with foreground suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type foreground suppression light source pulsed red LED	Original	12n5001/s35a	PDF
Contextual Info: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED	Original	12n5001/s35a	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N50 Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum	Original	12n50 qw-r502-528	PDF
Contextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25	Original	12n50p o-263 o-220	PDF
Contextual Info: Photoelectric sensors FNDM 12N5001/S35A Diffuse sensors with foreground suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type foreground suppression light source pulsed red LED	Original	12n5001/s35a	PDF
Contextual Info: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED	Original	12n5001/s35a	PDF
Contextual Info: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED	Original	12n5001/s35a	PDF
12n50 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N50 Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state	Original	12n50 qw-r502-528	PDF
IXTP12N50PM Contextual Info: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 6 ≤ 0.5 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C	Original	12n50pm o-220 405b2 ixtp12n50pm	PDF
12N50P Contextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTI 12N50P IXTP 12N50P = 500 = 12 ≤ 0.5 VDSS ID25 RDS on V A Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500	Original	12n50p o-263 o-220	PDF
MOSFET IXYS TO-263 Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 RDS on = 500 V = 12 A Ω = 500 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	12n50p o-220 o-263 405b2 +1mosfet ixys to-263	PDF
12N50P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFA 12N50P IXFP 12N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V	Original	12n50p	PDF
12n50 Contextual Info: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw	Original	12n5001 12n50	PDF
Contextual Info: Photoelectric sensors FNDM 12N5001/S35A Diffuse sensors with foreground suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type foreground suppression light source pulsed red LED	Original	12n5001/s35a	PDF

Contextual Info: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw	Original	12n5001	PDF
Contextual Info: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw	Original	12n5001	PDF
Contextual Info: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED	Original	12n5001/s35a	PDF
Contextual Info: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw	Original	12n5001	PDF
Contextual Info: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED	Original	12n5001/s35a	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N50 Preliminary Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state	Original	12n50 qw-r502-528	PDF
12n50 Contextual Info: IXFA 12N50P IXFP 12N50P Advance Technical Information PolarHVTM Power MOSFET IXFA 12N50P IXFP 12N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Maximum Ratings = 500 = 12 ≤ 0.5 ≤ 200 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	12n50p o-220 12n50	PDF
2N508B Abstract: 2N5088 national 2N5089 NATIONAL SEMICONDUCTOR 2N5088 2N5089 MMBT5088 MMBT5089 T092 LS5911 Contextual Info: 2N5088 / MMBT5088 12N50891 MMBT5089 & D iscrete P O W ER & S ig n a l Techno logies National S e m i c o n d u c t o r " MMBT5088 MMBT5089 2N5088 2N5089 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1pA to 50 mA.	OCR Scan	2n5088 2n5089 mmbt5088 mmbt5089 +6b5d1130 2n508b 2n5088 national 2n5089 national semiconductor t092 ls5911	PDF
Contextual Info: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw	Original	12n5001	PDF
Contextual Info: Photoelectric sensors FNDM 12N5001/S35A SmartReflect Light barriers dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type light barrier light source pulsed red LED background position Sde 20 . 80 mm	Original	12n5001/s35a	PDF

12N50 Search Results

12N50 Datasheets (24)

12N50 Price and Stock

onsemi FDB12N50TM

OptiFuse MOCB-12-N-50A

onsemi FDPF12N50NZ

STMicroelectronics STF12N50M2

Vishay Intertechnologies SIHD12N50E-GE3

12N50 Datasheets Context Search

12n50

IXTP12N50PM

12N50P

MOSFET IXYS TO-263

12N50P

12n50

12n50

2N508B