MMBT5088 Search Results

MMBT5089

Abstract: MMBT5088
Contextual Info: Transistors IC SMD Type NPN General Purpose Amplifier MMBT5088,MMBT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

2n 5088 transistor

Abstract: SOT-23 CEB
Contextual Info: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier

IC-3035

Abstract: MMBT5088LT1 MMBT5089 MMBT5089LT1 MMBT5088 m182 transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. Low Noise Transistors NPN Silicon COLLECTOR 3 MMBT5088LT1 MMBT5089LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol 5088LT 15089LT1 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous

br1271

Abstract: high gain low noise 2n BF112
Contextual Info: • S fê M IC O N D U G T O P ï ■>« 2N5088 2N5089 MMBT5088 MMBT5089 SOT-23 B Mark: 1 Q /1 R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1|aA to 50 mA.

MMBT5088LT1

Contextual Info: MMBT5088LT1 SOT-23 TRANSISTOR Description SOT-23 Medium Power Amplifier. NPN Silicon Transistor. 3 Features Large collector current:I Cmax =50mA 1 Low collector saturation voltage h FE RANK enabling low voltage operation 2 3 1 1.BASE 2.EMITTER 3.COLLECTOR

MMBT5088

Abstract: MMBT5088LT1 MMBT5089 MMBT5089LT1
Contextual Info: MOTOROLA Order this document by MMBT5088LT1/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors MMBT5088LT1 MMBT5089LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 5088LT1 5089LT1 Unit Collector – Emitter Voltage

BTS089

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors NPN Silicon MMBT5088LT1 MMBT5089LT1* C O L LE C T O R 3 'Motorola Preferred Device % MAXIMUM RATINGS Rating Sym bol 5088LT1 5089LT1 Unit Collector-Em itter Voltage VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

MMBT5088

Abstract: MMBT5089
Contextual Info: MAXIMUM RATINGS Value Rating Symbol MMBT5088 MMBT5089 v CEO 30 25 Vdc Collector-Base Voltage v CBO 35 30 Vdc Emitter-Base Voltage V ebo 4.5 Vdc 'C 50 mAdc Collector-Emitter Voltage Collector Current — Continuous Unit MMBT5088LT1 MMBT5089LT1* CASE 318-07, STYLE 6

MARKING 1R SOD-123

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors MMBT5088LT1 MMBT5089LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 5088LT1 5089LT1 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

MMBT5088

Abstract: MMBT5088LT1 MMBT5089 MMBT5089LT1
Contextual Info: MOTOROLA Order this document by MMBT5088LT1/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors MMBT5088LT1 MMBT5089LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 5088LT1 5089LT1 Unit Collector – Emitter Voltage

MMBT5088

Abstract: 50K MARKING SOT 23 MMBT5089 50K MARKING SOT23 5088lt1
Contextual Info: MMBT5088 MMBT5089 Low Noise NPN Transistor Surface Mount COLLECTOR 3 3 1 1 BASE P b Lead Pb -Free 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current-Continuous Symbol V CE O

Contextual Info: ON Semiconductort MMBT5088LT1 MMBT5089LT1 Low Noise Transistors NPN Silicon MMBT5089LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol 5088LT1 5089LT1 Unit Collector −Emitter Voltage VCEO 30 25 Vdc Collector −Base Voltage VCBO 35 30 Vdc Emitter −Base Voltage

MMBT5089LT1

Abstract: 5089LT1
Contextual Info: ON Semiconductort MMBT5088LT1 MMBT5089LT1 Low Noise Transistors NPN Silicon MMBT5089LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating 1 Symbol 5088LT1 5089LT1 Unit Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage

Contextual Info: MMBT5088LT1G, MMBT5088LT1G, MMBT5089LT1G, SMMBT5089LT1G Low Noise Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 TO−236 CASE 318

Contextual Info: B 6M SQ aH D U dT Q H j 2N5088 2N5089 MMBT5088 MMBT5089 SO T-23 B Mark: 1 Q /1 R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07.

TIC 1160

Abstract: 2N5088 equivalent 2n5088 transistor 2N5088 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

5089

Abstract: N5088 2n 5088 transistor c 5088 DS21 603 marking 2N5088 2N5089 MMBT5088 MMBT5089
Contextual Info: 2N5088/5089 / MMBT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier

MMBT5088

Abstract: MMBT5088LT1 MMBT5088LT1G MMBT5089 MMBT5089LT1 MMBT5089LT1G
Contextual Info: MMBT5088LT1, MMBT5089LT1 MMBT5089LT1 is a Preferred Device Low Noise Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBT5088 MMBT5089

2N5089

Abstract: 2N5088 equivalent 2n5088 transistor c 5088 2N5089 power 2N5088 MMBT5088 MMBT5089 4973P 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

ic a 2231

Abstract: mpsa18
Contextual Info: 15EJ I t ) 3 t i 7 E S ll GGöSlöb M A X IM U M R A T IN G S \ MOTOROLA Value Rating Symbol MMBT5088L MMBT5089L Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage Vc b o 35 30 Vdc Emitter-Base Voltage Ve b o 4.5 Vdc ic 50 mAdc Collector Current — Continuous

Samsung 546

Abstract: marking JB Transistor 547 MMBT5088 100khz 5v transistor npn transistor C 548 B transistor 548 T600 JB marking transistor JB SOT23 transistor
Contextual Info: SAMSUNG INC_ SEMICONDUCTOR MMBT5088 IME D | 7 ^ 4 1 4 5 Ü00727b T § NPN EPITAXIAL SILICON TRANSISTOR T-^q-iq - LOW NOISE TRANSISTOR ~ SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: Low Noise Transistors NPN Silicon COLLECTOR 3 MMBT5088LT1 MMBT5089LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol 5088LT 15089LT1 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous V CEO

2N5088 Fairchild

Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

2N5088 Cross Reference

Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.