L4142 Search Results

VGS-30V PCHANNEL

Contextual Info: Advanced Power MOSFET S F W FEATURES • ■ ■ ■ ■ ■ / I9 6 2 0 BVdss = -200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 Max. @ VDS = -200V

Contextual Info: f t w L4142C, EL4342C, EL4144C, EL4344C 600MHz, Multiplexing Amplifiers - Gain 0/ J v HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS * • : I Features General Description • 2 : 1 and 4:1 Mux Available The E L 4142C , E L 4342C , E L 4144C , and E L 4344C are 600M H z

Contextual Info: KM4216C/V255 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

IMPATT

Abstract: L4142
Contextual Info: ML 4000 SERIES GALLIUM ARSENIDE IMPATT DIODES Gallium Arsenide Im patt Diodes are available as flat profile, high low profile and low high low profile devices. These term s describe the doping profile in the active region o f the device. For high low and low high low profiles the avalanche region is more closely confined in the region o f peak electric