2n 5088 transistor
Abstract: NPN transistor 500ma TO-92 2n5088 transistor MMBT5088 transistor TO-92 mil-std c 5088 2N5088 2N5089 MMBT5089 432 sot23
Contextual Info: 2 N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier SOT-23 -H.h-A TOF* VIEW • &
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n5088/89mmbt5088/89mmbt5088mmbt5089+11o-92/sot-23mil-std-202ot-232n 5088 transistornpn transistor 500ma to-922n5088 transistortransistor to-92 mil-stdc 50882n50882n5089432 sot23
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GES2222A
Abstract: NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device b v CEO V C E sa t E Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300
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2n39032n39042n39052n3906+82n41232n41242n41252n41262n4400150mages2222anpn switching transistor 2n4403
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A9 npn
Abstract: GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 10 10 2 •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200
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2n39032n39042n39052n3906+72n41232n41242n41252n41262n4400a9 npnges93
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2N3903
Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) V c e (V) 10 10 Max. @ lc (m A ) 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200 200 200 200 200 350 350 350 350
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2n39032n39042n39052n3906+62n41232n41242n41252n41262n44002n4401
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2n5226
Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2n39032n39042n39052n3906+72n41232n41242n41252n41262n4400225ent2n5226
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2N3903
Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300
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2n39032n39042n39052n3906+72n41232n41242n41252n41262n4400225ma2n4401
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2n4125 equivalent
Abstract: 2N3904 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 2N3903 2N3905 NPN+2n3904 2N4123
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24
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2n39032n39042n39052n3906+112n41232n41242n41252n41262n44002n4125 equivalent2n3905 equivalentjedec 2n39042n3904 rnh 2n3904npn+2n3904
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2n5220
Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2n39032n39042n39052n3906+62n41232n41242n41252n41262n44002n5220
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2n4125 equivalent
Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2n39032n39042n39052n3906+102n41232n41242n41252n41262n44002n4125 equivalent2n5089 equivalent2n4123 equivalent2n3905 equivalentn4401
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NPN switching transistor 2N4403
Abstract: NPN transistor 2n 3904 transistor 2N 3904 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24
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2n39032n39042n39052n3906+92n41232n41242n41252n41262n4400150manpn switching transistor 2n4403npn transistor 2n 3904transistor 2n 3904
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2N3906 JEDEC
Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 equivalent 2n3906 npn 2N3903 2N3904 2N3905 2N4123
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2n39032n39042n39052n3906+102n41232n41242n41252n41262n44002n3906 jedec2n3906 hie2n3905 equivalent2n3906 equivalent2n3906 npn
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N5089
Abstract: N5088 ksp-65
Contextual Info: TRANSISTORS FUNCTION GUIDE 1.2 LOW Noise Transistors 1.2.1 SOT-23 Typ« Transistors NF dB Device and Polarity {Marking) hFE Condition Condition VcEO lc V« Condition Max Frequency (V) (A) (V) MIN MAX (mA) Ib (mA) KST6428(1K) 4 Audio 50 02 5 0.1 250 650 100
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ot-23kst6428kst2484kst5086+7kst5088kst5087kst5089o-92sn5089n5088ksp-65
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5089
Abstract: N5088 2n 5088 transistor c 5088 DS21 603 marking 2N5088 2N5089 MMBT5088 MMBT5089
Contextual Info: N5088/5089 / MMBT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier
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2n5088/5089mmbt5088/5089mmbt5088mmbt5089+11o-92/sot-23mil-std-202ot-235089n50882n 5088 transistorc 5088ds21603 marking2n50882n5089
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2n3904 409
Abstract: 2N4125 2N4126 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2n39032n39042n39052n3906+72n41232n41242n41252n41262n44002n4i262n3904 409
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ERF 2030
Abstract: HM 1211 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2n39032n39042n39052n3906+82n41232n41242n41252n41262n4400-in4i48erf 2030hm 1211
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2n3906 REPLACEMENT
Abstract: 2n3904 TRANSISTOR REPLACEMENT 2n3906 TRANSISTOR REPLACEMENT 2n4125 replacement 2n4123 transistor 2N3903 2N3904 2N3906 2N4123 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GEN ERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0m A -(V) Min. Max. @ l c (mA) V c e (V) 10 Max. @ lc(m A ) f-r -Typical l e (mA) (MHz) C c b @ 10V lr 1 MHz Continuous Typical (PF ) Im AI
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2n39032n39042n39052n3906+112n41232n41242n41252n41262n440010kfi2n3906 replacement2n3904 transistor replacement2n3906 transistor replacement2n4125 replacement2n4123 transistor
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n3904
Abstract: NPN transistor 2n 3904 NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E M ax. @ l c (m A) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24
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2n39032n39042n39052n3906+92n41232n41242n41252n41262n4400-150man3904npn transistor 2n 3904npn switching transistor 2n4403
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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ot-23bsx19 equivalentbc350bc107+7bfw63bcw17short data on 2n744transistor bc2872n3020bc4512n2868
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2n3904 418
Abstract: 2N3905 Equivalent 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2n39032n39042n39052n3906+72n41232n41242n41252n41262n44002n3904 4182n3905 equivalent
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2N3903
Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300
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2n39032n39042n39052n3906+72n41232n41242n41252n41262n4400150ma2n4401
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2N5219
Abstract: 2N5227 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) V c e (V) Max. @ lc (m A ) 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200 200 200 200 200 350 350 350 350 350
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2n39032n39042n39052n3906+72n41232n41242n41252n41262n44002n52192n5227
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2N3903
Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E M ax. @ l c (m A) V c e (V) 10 10 Max. @ lc (m A ) •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5
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2n39032n39042n39052n3906+62n41232n41242n41252n41262n44002n4401
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A2 zener diode
Abstract: diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 DIODE 827 ZENER 1N5242 1N414* zener 2n2222 transistor pin b c e ZENER 1n5232
Contextual Info: DISCRETE SEMICONDUCTORS I N D E X A N D C R O S S REFERENCE Industry Number Type Allegro Number s Allegro Package TO-236AB TO-236AB TO-236AB 1N914 Diode TMPD914 1N4148 1N5230 1N5231 1N5232 Diode Zener Zener Zener TMPD4148 TMPZ5230 TMPZ5231 TMPZ5232 1N5234
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1n9141n41481n52301n5231+161n52321n52341n52361n52371n52391n5240a2 zener diodediode zener a1to-226aato226aazener diode 1n5240diode 827zener 1n52421n414* zener2n2222 transistor pin b c ezener 1n5232
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