35N25
Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Contextual Info: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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ID 48 Megamos
Abstract: 35N25 IXTM35N25 ixtm35n30
Contextual Info: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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ixth35n25ixtm35n25ixth35n30ixtm35n30+5o-204o-247ixth350id 48 megamos35n25
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40N30
Abstract: IXTH40N30 IXTM35N30 IXTM40N30 40AA
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C
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35n3040n30o-204o-247+4ixth40n30ixtm35n30ixtm40n3040aa
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IXTH40N30
Abstract: 40N30 D-68623 IXTM40N30 35N30 IXTM35N30
Contextual Info: VDSS IXTH/IXTM 35 N30 300 V IXTH 40 N30 300 V IXTM 40 N30 300 V MegaMOSTMFET N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V V GS Continuous ±20 V VGSM Transient
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35n3040n30o-204o-247+4ixth40n30d-68623ixtm40n30ixtm35n30
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35N30
Abstract: rm 1117 ixtm35n30
Contextual Info: p VDSS MegaMOS FET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions v MS Tj = 25°G to 150“ C 300 V V«, Tj = 25°C to 150°C; RGS = 1 M£i 300 V V cs Continuous ±20 V VGSM Transient ±30 V ^□25 Tc = 25CC 35
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megamos
Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Contextual Info: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4
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IXTH40N30
Abstract: D2528 N30300
Contextual Info: T X /Y " ’ v MegaMOS FET IXTH/IXTM 35 N30 300 V IXTH 40 N30 300 V IXTM 40 N30 300 V N-Channel Enhancement Mode Symbol Test Conditions VDSS Tj = 25 °C to 150°C 300 V VDGR Tj = 25 °C to 150°C; RGS = 1 M il 300 V Maximum Ratings ' > V ±30 V ^D25 Tc 35N30
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