FH40N30 Search Results

40N30

Abstract: 35n30 FM40N30 IXFH40N30
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 300 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous

Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous

FH40N30

Abstract: IXFH40N30 40N30 D-68623 IXFH35N30 IXFM35N30 IXFM40N30 IXYS Corporation FM40N30 IXFH40N30S
Contextual Info: IXFH35N30 IXFM35N30 VDSS HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM35N30 300 V FH40N30 300 V IXFM40N30 300 V FH40N30 IXFM40N30 ID25 RDS on trr 35 A 40 A 40 A 100mΩ 85mΩ 88mΩ 200 ns 200 ns 200 ns

1Bt smd

Abstract: smd 1bt A1t smd smd diode A1T smd 1bt diode 35N30 40N30 IXFH40N30 diode D83 004 D-68623
Contextual Info: □IXYS IXFH 35N30 IXFH 40N30 ^DSS 300 V 300 V 300 V •TM HiPerFET Power MOSFETs IXFH/FM 35N30 IXFH 40N30 IXFM 40N30 IXFM 35N30 IXFM 40N30 ^D25 35 A 40 A 40 A D DS on trr 100m Q. 200 ns 85m Q. 200 ns 88m Q. 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS Family

IXFH40N30

Abstract: international rectifier igbt to-247 package
Contextual Info: v DSS HiPerFET Power MOSFETs ix f h / ix f m 35N30 FH40N30 IXFM40N30 N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol v' dss = 25°C to 150°C 300 V 300 V V VGS Continuous ±20 Vc*« Transient ±30 V u Tc = 25°C 35N30 40N30 35 40

IXFH40N30

Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V VGSM