FH40N30
Abstract: IXFH40N30 40N30 D-68623 IXFH35N30 IXFM35N30 IXFM40N30 IXYS Corporation FM40N30 IXFH40N30S
Contextual Info: IXFH35N30 IXFM35N30 VDSS HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM35N30 300 V IXFH40N30 300 V IXFM40N30 300 V IXFH40N30 IXFM40N30 ID25 RDS on trr 35 A 40 A 40 A 100mΩ 85mΩ 88mΩ 200 ns 200 ns 200 ns
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ixfh35n30ixfm35n30ixfh/ixfm35n30ixfh40n30+9ixfm40n30o-24735n3040n30fh40n30d-68623ixys corporationfm40n30ixfh40n30s
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dioda by 238
Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Contextual Info: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching
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0d00s73dioda by 2381xys1xfm67n10+7hiperfetixfn50n25ixfm50n20ixfm6n90ixfh40n30ixfh10n100ixfh11n100
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696
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IXFD14N80
Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50
Contextual Info: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max *yp * Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9
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ixfd76n07-12xfd67n10ixfd75n10ixfd170n10+14ixfd42n20ixfd50n20ixfd68n201xfd90n20qixfd110n20ixfd35n30ixfd14n80cmp 3.48ixfh50n201xfh12n90ixfn170n10diode 348ixfd21n50ixfh21n50
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1XFH12n100
Abstract: transistor 13n80
Contextual Info: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
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4bflb22b1532a200nsixfh12n100+5ixfh10n100ixfm12n100ixfm10n1001xfh12n100transistor 13n80
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TL 650 ht
Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100
Contextual Info: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching
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4bfid22bo-204o-284tl 650 ht+9mbabdiode sy 166dittiixfh26n50mkl seriesixfn15n100ixfms0n20ixfh12n100ixfh5n100
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220v AC voltage stabilizer schematic diagram
Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122
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p390-ndp465-ndp466-ndp467-nd+14lng901cf9lng992cfbwlng901cfbwlng91lcfbw220v ac voltage stabilizer schematic diagramba 49182rjh 3047rjh 3047 equivalenta1458 optophilips ecg master replacement guidemosfet, rjh 3077sc1097philips ecg semiconductors master replacement guideelectronic ballast 40w using 13005 transistor
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