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IXTK21 Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTK21N100		IXYS	600V high voltage megaMOS FET	Original	PDF	139.16KB	4

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Littelfuse Inc IXTK210P10T Mosfet, 210A, 100V, 1.04Kw, To-264-3; \|Littelfuse IXTK210P10T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXTK210P10T	Bulk	623		1	1 $48.64 10 $44.90 100 $38.04 1000 $37.21 10000 $37.21	Buy Now
	IXTK210P10T	Bulk			300	1 - 10 - 100 - 1000 $21.00 10000 $19.85	Buy Now
RS	IXTK210P10T	Bulk		8 Weeks	25	1 - 10 - 100 $37.05 1000 $37.05 10000 $37.05	Get Quote
Onlinecomponents.com	IXTK210P10T					1 - 10 - 100 $52.80 1000 $19.28 10000 $19.28	Buy Now
IXYS Corporation IXTK210P10T MOSFETs TrenchP Power MOSFETs
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXTK210P10T	Tube			300	1 - 10 - 100 - 1000 $22.32 10000 $22.32	Buy Now
Quest Components	IXTK210P10T		3			1 $21.36 10 $21.36 100 $21.36 1000 $21.36 10000 $21.36	Buy Now
TME	IXTK210P10T				1	1 $33.42 10 $25.69 100 $22.07 1000 $22.07 10000 $22.07	Get Quote

IXTK21 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DIODE B44 sot Abstract: IXTK21 B44 diode IXTN21N100 Contextual Info: IXTK21 N100 IXTN21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V	OCR Scan	ixtk21 ixtn21n100 o-264 21n100 +2diode b44 sot b44 diode	PDF
IXTK210P10T Contextual Info: Advance Technical Information IXTK210P10T IXTX210P10T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 100V - 210A Ω 7.5mΩ 200ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings	Original	ixtk210p10t ixtx210p10t 200ns o-264 +3plus247 -100a 210p10t	PDF
78737 Contextual Info: High Voltage MegaMOS FETs IXTK21N100 IXTN21N100 V DSS ^D25 R DS on =1000 V = 21 A = 0.55 fì N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions VDSS Tj = 25 °C to 150°C 1000 1000 V v DGR Tj = 25 °C to 150°C; RGS = 1 MQ 1000 1000 V V ss	OCR Scan	ixtk21n100 ixtn21n100 o-264 ot-227 +4e153432 ab22b 00d4d0s 78737	PDF
Contextual Info: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTK210P10T IXTX210P10T = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 100V - 210A Ω 7.5mΩ 200ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings	Original	ixtk210p10t ixtx210p10t 200ns o-264 +1210p10t	PDF
Contextual Info: Preliminary Technical Information IXTK210P10T IXTX210P10T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 100V - 210A Ω 7.5mΩ 200ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings	Original	ixtk210p10t ixtx210p10t 200ns o-264 +2-100a 210p10t	PDF
21N100 Abstract: 21N10 ixtw DIXYS IXTN21N100 Contextual Info: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ	OCR Scan	21n100 o-264 cto150 ot-227 +421n10 ixtw dixys ixtn21n100	PDF
Irfp250 irfp460 Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 Contextual Info: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)	OCR Scan	o-204 o-264 isoplus247 o-220 +16o-252 o-247 o-268 isoplus220 o-263 ot-227b irfp250 irfp460 ixta3n120 36p10 irfp450 bridge n503 irfp460 complementary ixth30n25 ixth48n15 ixth12n100q 16p20	PDF
IXAN0009 Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w Contextual Info: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power	Original	ixan0009 0009 ixan0009 2 ixan0009 3 +6tms320f2407a ge scr manual mosfet inverter 2kw 100khz smps 1kw schematic diagram inverter 500w using mosfet schematic diagram pwm inverter 500w	PDF
30n50 mosfet Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel Contextual Info: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600	OCR Scan	o-263 o-263aa o-247 ixga10n60a +14ixga24n60a ixgh32n60b ixgh50n60as ixga10n60u1 30n50 mosfet dse119-06as vm0400-02f mcc smd diode 300-06da smd43 35-06as 500-06da 250-12da mosfet p channel	PDF
IXAN0011 Abstract: 0011 resonant smps 500W smps 500w half bridge 2kw mosfet smps 500W half bridge converter 2kw 1kw full bridge converter smps smps 1kW DD408 Contextual Info: IXAN0011 Driving Your MOSFETs Wild to Obtain Greater Efficiencies, Power Densities, and Lower Overall Costs. Sam S. Ochi Director of Integrated Circuits Research and Development IXYS Corporation 3540 Bassett St., Santa Clara California USA Phone: 408-982-4355, Fax: 408-496-0670	Original	ixan0011 100khz 0011 resonant smps 500w +7smps 500w half bridge 2kw mosfet smps 500w half bridge converter 2kw 1kw full bridge converter smps smps 1kw dd408	PDF