MOSFET 1000V 30A Search Results

MOSFET 1000v 30a

Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Contextual Info: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

Contextual Info: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

Contextual Info: HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS on ≤ IXFL34N100 1000V 30A Ω 280mΩ (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR

IXFL34N100

Abstract: IXFN36N100
Contextual Info: IXFL34N100 HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS on ≤ 1000V 30A Ω 280mΩ (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR

POWER MOSFET Rise Time 1000V NS

Abstract: MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 OM9Q27SP1
Contextual Info: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • M O S F E T And Common Cathode Rectifier In O ne Package

Contextual Info: OM6034NM OM6036NM OM6Û35NM OM6Q37NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • Surface Mount Hermetic Package • High Current/Low RDS on • Fast Switching, Low Drive Current

Contextual Info: AOD2N100 1000V,2A N-Channel MOSFET General Description Product Summary The AOD2N100 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with

Contextual Info: OM6034NM OM6036NM OM6035NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current

OM6005

Abstract: OM6034NM OM6035NM OM6036NM OM6037NM OM6106 OM6006
Contextual Info: OM6034NM OM6036NM OM6035NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current

MOSFET 1000v 30a

Abstract: SCHEMATIC POWER AUDIO MOSFET MOSFET 1000V audio power mosfet
Contextual Info: OM6034NM OM6035NM OM6036NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thru 1000V, Up To 30 Amp, N-Channel MOSFET In A Surface Mount Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current

Contextual Info: AOD2N100 1000V,2A N-Channel MOSFET General Description Product Summary The AOD2N100 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS on , Ciss and Crss along with

rectifier 1046

Abstract: MMIX1F44N100Q3
Contextual Info: Advance Technical Information MMIX1F44N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 30A Ω 245mΩ 300ns D N-Channel Enhancement Mode Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings

MMIX1F44N100Q3

Contextual Info: Advance Technical Information HiperFETTM Power MOSFET Q3-Class MMIX1F44N100Q3 VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 30A Ω 245mΩ 300ns D N-Channel Enhancement Mode Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings

44N100Q3

Abstract: MMIX1F44N100Q3
Contextual Info: Advance Technical Information MMIX1F44N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 30A Ω 245mΩ 300ns D N-Channel Enhancement Mode Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings

Contextual Info: OM6034NM OM6036NM OM6035NM OM6037NM POWER MOSFET IN HERMETIC SURFACE MOUNT PACKAGE 100V Thr u 1000V, Up To 30 Am p, N-Channel MOSFET In A Surface M o u n t Package FEATURES • • • • • • Surface Mount Hermetic Package High Current/Low RDS on Fast Switching, Low Drive Current

Contextual Info: APTM100TA35SCTPG APTM100TA35SCPG Triple phase leg MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

Contextual Info: OM9Û27SP1 OM9 29SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30 A Power M O S F E T And High Spee d Rectifier In On e Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

Contextual Info: APTM100TA35SCTPG APTM100TA35SCPG Triple phase leg MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

5N100C

Abstract: fast recovery 30amp fast recovery 35amp OM15N50C OM30N20C OM35N10C OM5N100C 1000v 35amp
Contextual Info: O M NIREL CORP IM E 0 1 ^ ^ 0 7 3 0 0 0 0 2 1 ,4 M I " OM35N10C OM15N50C QM30N20C OM5N1QOC POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE T ^ 3 100V Thru 1000V, Up To 35 Amp, N-Channel MOSFET With Low RDS(qn Characteristics > FEATURES Isolated Hermetic Metal Package

5N100C

Contextual Info: O M N IR E L CORP IM E 1 ^ ^ 0 7 3 0 0 0 0 2 1 ,4 M I " OM35N10C OM15N50C QM30N20C OM5N1QOC POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE T ^ 3 100V Thru 1000V, Up To 35 Amp, N-Channel MOSFET With Low RDS(qn Characteristics > FEATURES Isolated Hermetic Metal Package

OA 70 diode

Abstract: 1000v 35amp I222-00
Contextual Info: 0J1NIREL CORP 43E; ]> hTÔ^QÎB 0000526 1 « O M N I O M 35N 1Û C O M 15N 50C O M 30N 20C Q M 5N 100C POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE 100V Thru 1000V, Up To 35 Amp, N-Channe^ MOSFET With Low Rds ON> Characteristics». in FEATURES

Contextual Info: APTM100H45ST Full bridge Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 450mΩ Ω max @ Tj = 25°C ID = 18A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features • •

30n100

Abstract: IXTB30N100L 30n10
Contextual Info: LinearTM Power MOSFET w/ Extended FBSOA IXTB30N100L VDSS ID25 RDS on = = ≤ 1000V 30A Ω 450mΩ N-Channel Enhancement Mode Avalanche Rated PLUS264TM G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTN30N100L = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 1000V 30A Ω 450mΩ miniBLOC E153432 S G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ