12N120 Search Results

12n120

Contextual Info: Advance Technical Information MegaMOSTMFET VDSS = 1200 V ID cont = 12 A RDS(on)= 1.3 Ω IXTH 12N120 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous

Contextual Info: IGBT Optimized for IXGA 12N120A2 IXGP 12N120A2 VCES = 1200 V IC25 = 24 A VCE sat = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES

12n120

Abstract: TO247AE
Contextual Info: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage

Contextual Info: IXTH 12N120 Power MOSFET, Avalanche Rated High Voltage VDSS = 1200 V ID cont = 12 A RDS(on)= 1.4 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous

12n120

Abstract: UPS SIEMENS IXTH12N120
Contextual Info: VDSS = 1200 V ID cont = 12 A RDS(on)= 1.4 Ω IXTH 12N120 Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous

MOLEX 3 pin

Abstract: UL1015 14 AWG wire
Contextual Info: GTM2066 SERIES-65W 0-65 Watts, 3"X5" Open Frame, Universal Input, Dual and Triple Output Family, Medical ISO 9001:2008 REGISTERED INDOOR USE ONLY DIELECTRIC WITHSTAND VOLTAGE: 4242VDC 3000VAC FROM PRIMARY TO SECONDARY 2121VDC (1500VAC) SECONDARY TO GROUND

Contextual Info: GT-2066 SERIES-80W ISO 9001:2008 REGISTERED 0-80 Watts, 3"X5" Open Frame, Universal Input, Dual and Triple Output Family, ITE Medical Versions See Page 135 INDOOR USE ONLY ELECTRICAL SPECIFICATIONS: INPUT VOLTAGE: UNIVERSAL INPUT FROM 100VAC TO 240VAC INPUT CURRENT:

Contextual Info: 12N120K5-2, 12N120K5, 12N120K5, 12N120K5 N-channel 1200 V, 0.58 Ω typ.,12 A Zener-protected SuperMESH 5 Power MOSFETs in H2PAK-2, TO-220 and TO-247 Datasheet - preliminary data Features TAB TAB Order codes VDS RDS on max. 1200 V 0.69 Ω 2

1200 volt mosfet

Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches