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IXFN44N100P Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN44N100P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 37A SOT-227B	Original	PDF		4

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IXYS Corporation IXFN44N100P Module; single transistor; 1kV; 37A; SOT227B; screw; Idm: 110A; 890W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFN44N100P				300	1 - 10 - 100 - 1000 $36.36 10000 $36.36	Get Quote
Mouser Electronics	IXFN44N100P		193			1 $51.51 10 $39.46 100 $39.46 1000 $39.46 10000 $39.46	Buy Now
TTI	IXFN44N100P	Tube			300	1 - 10 - 100 - 1000 $34.03 10000 $34.03	Buy Now
Future Electronics	IXFN44N100P	Tube		19 Weeks	300	1 - 10 $46.69 100 $45.75 1000 $45.38 10000 $45.38	Buy Now
Littelfuse Inc IXFN44N100P Trans MOSFET N-CH 1KV 37A 4-Pin SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Arrow Electronics	IXFN44N100P		170	19 Weeks	10	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	IXFN44N100P	Bulk		8 Weeks	10	1 - 10 $56.48 100 $56.48 1000 $56.48 10000 $56.48	Get Quote
Onlinecomponents.com	IXFN44N100P					1 - 10 - 100 $85.22 1000 $30.31 10000 $30.31	Buy Now

IXFN44N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFN44N100P Abstract: 44N100P 40108 Contextual Info: IXFN44N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfn44n100p 300ns ot-227 e153432 +344n100p 4-01-08-d 40108	PDF
Contextual Info: VDSS ID25 IXFN44N100P PolarTM Power MOSFET HiPerFETTM = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	ixfn44n100p 300ns ot-227 e153432 +244n100p 4-01-08-d	PDF
Contextual Info: Preliminary Technical Information IXFN44N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 37A ≤ 220mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	ixfn44n100p 300ns ot-227 e153432 +244n100p 8-27-07-b	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200v ixfb30n120p ixfl30n120p ixfn30n120p +14ixfl32n120p ixfn32n120p plus220 ixfv110n10ps 1200 volt mosfet 1000 volt mosfet mosfet 300 volt hiperfet ixfn38n100 sot 227b diode fast transistor polar 2r4n120p ixfn44n100p ixfb44n100p	PDF