IXFN32N120P Search Results

IXFN32N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN32N120P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 32A SOT-227B	Original	PDF		5

IXFN32N120P Price and Stock

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IXYS Corporation IXFN32N120P MOSFET N-CH 1200V 32A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN32N120P	Tube	64		1	1 $72.02 10 $55.69 100 $55.69 1000 $55.69 10000 $55.69	Buy Now
Mouser Electronics	IXFN32N120P					1 $72.02 10 $55.68 100 $55.68 1000 $55.68 10000 $55.68	Get Quote
TTI	IXFN32N120P	Tube			300	1 - 10 - 100 - 1000 $55.69 10000 $55.69	Buy Now
TME	IXFN32N120P				1	1 $94.50 10 $75.00 100 $75.00 1000 $75.00 10000 $75.00	Get Quote
Littelfuse Inc IXFN32N120P Discmsft N-Ch Hiperfet-Polasot-227B(Mini/ Tube \|Littelfuse IXFN32N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFN32N120P	Bulk			300	1 - 10 - 100 $58.36 1000 $58.36 10000 $58.36	Buy Now
RS	IXFN32N120P	Bulk		8 Weeks	10	1 - 10 $86.13 100 $78.38 1000 $78.38 10000 $78.38	Get Quote

IXFN32N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFN32N120P VDSS = 1200V 32A ID25 = Ω RDS on ≤ 0.31Ω ≤ 300 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFN32N120P 32N120P	PDF
32N120P Abstract: ixfn32n120p IXFN32N120 Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFN32N120P VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFN32N120P 300ns 32N120P 4-03-08-B ixfn32n120p IXFN32N120	PDF
IXFN32N120P Abstract: 32N120P 32N120 Contextual Info: IXFN32N120P PolarTM HiPerFETTM Power MOSFET VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol miniBLOC E153432 Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFN32N120P 300ns E153432 Nm/l100 100ms 32N120P 3-04-10-D IXFN32N120P 32N120	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF