IXFN32N120 Search Results

IXFN32N120 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN32N120		IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS	Original	PDF	578.26KB	4
IXFN32N120P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 32A SOT-227B	Original	PDF		5

IXFN32N120 Price and Stock

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IXYS Corporation IXFN32N120P MOSFET N-CH 1200V 32A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN32N120P	Tube	64		1	1 $72.02 10 $55.69 100 $55.69 1000 $55.69 10000 $55.69	Buy Now
Mouser Electronics	IXFN32N120P					1 $72.02 10 $55.68 100 $55.68 1000 $55.68 10000 $55.68	Get Quote
TTI	IXFN32N120P	Tube			300	1 - 10 - 100 - 1000 $55.69 10000 $55.69	Buy Now
TME	IXFN32N120P				1	1 $94.50 10 $75.00 100 $75.00 1000 $75.00 10000 $75.00	Get Quote
IXYS Corporation IXFN32N120 MOSFET N-CH 1200V 32A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN32N120	Box			10	1 - 10 $27.37 100 $27.37 1000 $27.37 10000 $27.37	Buy Now
Newark	IXFN32N120	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXFN32N120P Discmsft N-Ch Hiperfet-Polasot-227B(Mini/ Tube \|Littelfuse IXFN32N120P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFN32N120P	Bulk			300	1 - 10 - 100 $58.36 1000 $58.36 10000 $58.36	Buy Now
RS	IXFN32N120P	Bulk		8 Weeks	10	1 - 10 $86.13 100 $78.38 1000 $78.38 10000 $78.38	Get Quote

IXFN32N120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFN32N120P VDSS = 1200V 32A ID25 = Ω RDS on ≤ 0.31Ω ≤ 300 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFN32N120P 32N120P	PDF
32N120P Abstract: ixfn32n120p IXFN32N120 Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFN32N120P VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFN32N120P 300ns 32N120P 4-03-08-B ixfn32n120p IXFN32N120	PDF
IXFN32N120P Abstract: 32N120P 32N120 Contextual Info: IXFN32N120P PolarTM HiPerFETTM Power MOSFET VDSS = 1200V ID25 = 32A Ω RDS on ≤ 310mΩ ≤ 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol miniBLOC E153432 Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFN32N120P 300ns E153432 Nm/l100 100ms 32N120P 3-04-10-D IXFN32N120P 32N120	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF