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    32N120 Price and Stock

    Littelfuse Inc

    Littelfuse Inc IXGH32N120A3

    Transistor, Igbt, 1.2Kv, 75A, To-247; |Littelfuse IXGH32N120A3
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    Newark IXGH32N120A3 Bulk 93 1
    • 1 $13.54
    • 10 $11.76
    • 100 $7.61
    • 1000 $6.88
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    RS IXGH32N120A3 Bulk 8 Weeks 30
    • 1 -
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    • 100 $10.80
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    • 10000 $10.80
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    Littelfuse Inc IXFL32N120P

    Mosfet, N-Ch, 1.2Kv, 24A, Isoplus I5-Pak; |Littelfuse IXFL32N120P
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    Newark () IXFL32N120P Bulk 1
    • 1 $90.63
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    IXFL32N120P Bulk 300
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    • 1000 $55.56
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    RS IXFL32N120P Bulk 8 Weeks 25
    • 1 -
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    • 100 $79.58
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    Littelfuse Inc IXFN32N120P

    Discmsft N-Ch Hiperfet-Polasot-227B(Mini; |Littelfuse IXFN32N120P
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    Newark () IXFN32N120P Bulk 300
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    • 10000 $56.92
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    IXFN32N120P Bulk 1
    • 1 $121.05
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    RS IXFN32N120P Bulk 8 Weeks 10
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    • 10 $106.29
    • 100 $106.29
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    Littelfuse Inc IXGT32N120A3

    Disc Igbt Pt-Low Frequency To-268Aa/ Tube |Littelfuse IXGT32N120A3
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    Newark IXGT32N120A3 Bulk 30
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    • 100 $10.71
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    RS IXGT32N120A3 Bulk 8 Weeks 30
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    Littelfuse Inc IXGT32N120A3-TRL

    Disc Igbt Low Vsat Pt 1200V 32A To-268/; |Littelfuse IXGT32N120A3-TRL
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    Newark IXGT32N120A3-TRL Tape & Reel 400
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    • 1000 $11.83
    • 10000 $10.86
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    RS IXGT32N120A3-TRL Bulk 8 Weeks 400
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    32N120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR


    Original     		32n120728b1123b1065b1 PDF

    Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR


    Original     		32n120ot-227e153432728b1+2123b1065b1 PDF

    32N12

    Abstract: 32N120A3
    Contextual Info: Preliminary Technical Information High Voltage IGBT IXGH 32N120A3 IXGT 32N120A3 VCES = 1200 V IC25 = 75 A VCE sat ≤ 2.35 V Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1200 V VCER TJ = 25°C to 150°C, RGE = 1 MΩ 1200 V VGES Continuous


    Original     		32n120a3ic110o-247o-268+132n12 PDF

    32N12

    Abstract: 32N120
    Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR


    Original     		32n120728b1123b1065b1+132n12 PDF

    max2852

    Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR


    Original     		32n120ot-227e153432728b1+1max2852 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF