32N12 Search Results
32N12 Price and Stock
Rochester Electronics LLC FQPF32N12V2MOSFET N-CH 120V 32A TO220F |
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FQPF32N12V2 | Tube | 83,103 | 170 |
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Rochester Electronics LLC FQB32N12V2TMMOSFET N-CH 120V 32A D2PAK |
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FQB32N12V2TM | Bulk | 49,600 | 198 |
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Infineon Technologies AG ISC032N12LM6ATMA1TRENCH >=100V |
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ISC032N12LM6ATMA1 | Cut Tape | 2,685 | 1 |
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ISC032N12LM6ATMA1 | Reel | 5,000 | 26 Weeks | 5,000 |
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ISC032N12LM6ATMA1 | 853 |
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ISC032N12LM6ATMA1 | Cut Tape | 4,485 | 1 |
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ISC032N12LM6ATMA1 | 27 Weeks | 5,000 |
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Rochester Electronics LLC FQP32N12V2MOSFET N-CH 120V 32A TO220-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQP32N12V2 | Tube | 1,244 | 319 |
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Rochester Electronics LLC FQI32N12V2TUMOSFET N-CH 120V 32A I2PAK |
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FQI32N12V2TU | Tube | 592 | 404 |
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32N12 Datasheets Context Search
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Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR |
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32N120 728B1 123B1 728B1 065B1 | |
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Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR |
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32N120 OT-227 E153432 728B1 123B1 728B1 065B1 | |
32N12
Abstract: 32N120A3
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32N120A3 IC110 O-247 O-268 32N12 32N120A3 | |
32N12
Abstract: 32N120
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32N120 728B1 123B1 728B1 065B1 32N12 32N120 | |
max2852Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR |
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32N120 OT-227 E153432 728B1 max2852 | |
32N12Contextual Info: 32N12V2/32N12V2 120V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQB32N12V2/FQI32N12V2 FQB32N12V2 FQB32N12V2TM 32N12 | |
EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 | |
thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
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11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 |