32N12 Search Results
32N12 Price and Stock
Infineon Technologies AG ISC032N12LM6ATMA1Power MOSFET, N Channel, 120 V, 170 A, 3200 ?ohm, TDSON-FL, 8 Pins, Surface Mount - Tape and Reel (Alt: ISC032N12LM6ATMA1) |
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ISC032N12LM6ATMA1 | Tape & Reel | 5,000 | 52 Weeks | 5,000 |
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ISC032N12LM6ATMA1 | Cut Tape | 140 | 1 |
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| ISC032N12LM6ATMA1 | Tape & Reel | 140 | 100 |
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ISC032N12LM6ATMA1 | 5,000 |
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ISC032N12LM6ATMA1 | 53 Weeks | 5,000 |
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Torex Semiconductor LTD XC6132N12MMR-GVoltage Supervisor, 1.2V, 1.6 V to 6 V, Open-Drain, SOT-26, 6 Pins, Surface Mount, -40 ?C - Tape and Reel (Alt: XC6132N12MMR-G) |
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XC6132N12MMR-G | Tape & Reel | 16 Weeks | 3,000 |
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Torex Semiconductor LTD XD6132N12FMR-QVolt Supervisor Detector 1.2V 1.6V to 6V 6-Pin SOT-26 T/R - Tape and Reel (Alt: XD6132N12FMR-Q) |
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XD6132N12FMR-Q | Tape & Reel | 16 Weeks | 3,000 |
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Amphenol Corporation QWLD01R32N12S- Bulk (Alt: QWLD01R32N12S) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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QWLD01R32N12S | Bulk | 24 Weeks | 2 |
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Amphenol Corporation QWLD05R32N12S- Bulk (Alt: QWLD05R32N12S) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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QWLD05R32N12S | Bulk | 24 Weeks | 2 |
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32N12 Datasheets Context Search
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Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR |
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32n120728b1123b1065b1 | |
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Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR |
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32n120ot-227e153432728b1+2 | |
32N12
Abstract: 32N120A3
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32n120a3ic110o-247o-268+1 | |
32N12
Abstract: 32N120
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32n120728b1123b1065b1+1 | |
max2852Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFN 32N120 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr = 1200V = 32A Ω = 0.35Ω D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR |
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32n120ot-227e153432728b1+1 | |
32N12Contextual Info: 32N12V2/32N12V2 120V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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fqb32n12v2/fqi32n12v2fqb32n12v2fqb32n12v2tm32n12 | |
EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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ms-01310-pin5m-1994mo-229+10 | |
thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
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11pm104thyristor tag 8506nais inverter vf 7f operation manual922aa1y-a4p+7 |