IXFN38N100 Search Results

IXFN38N100 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN38N100P		IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 38A SOT-227B	Original	PDF		5
IXFN38N100Q2		IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS	Original	PDF	575.29KB	4

IXFN38N100 Price and Stock

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IXYS Corporation IXFN38N100P MOSFET N-CH 1000V 38A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN38N100P	Tube	187		1	1 $49.02 10 $37.02 100 $34.80 1000 $34.80 10000 $34.80	Buy Now
Mouser Electronics	IXFN38N100P		552			1 $49.02 10 $37.02 100 $34.80 1000 $34.80 10000 $34.80	Buy Now
TTI	IXFN38N100P	Tube			300	1 - 10 - 100 - 1000 $33.95 10000 $33.95	Buy Now
TME	IXFN38N100P				1	1 $51.37 10 $45.00 100 $45.00 1000 $45.00 10000 $45.00	Get Quote
New Advantage Corporation	IXFN38N100P		235		1	1 - 10 - 100 $100.77 1000 $93.02 10000 $93.02	Buy Now
IXYS Corporation IXFN38N100Q2 MOSFET N-CH 1000V 38A SOT-227
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN38N100Q2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	IXFN38N100Q2					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip Stock	IXFN38N100Q2		824			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXFN38N100P Trans MOSFET N-CH 1KV 38A 4-Pin SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFN38N100P		50		1	1 $51.18 10 $48.55 100 $46.79 1000 $46.36 10000 $46.36	Buy Now
Newark	IXFN38N100P	Bulk	247		1	1 $42.84 10 $36.28 100 $34.11 1000 $34.11 10000 $34.11	Buy Now
IXYS Integrated Circuits Division IXFN38N100Q2 MOSFET N-CH 1000V 38A SOT-227 / N-Channel 1000 V 38A (Tc) 890W (Tc) Chassis Mount SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	IXFN38N100Q2		699			1 - 10 $32.45 100 $29.09 1000 $29.09 10000 $29.09	Buy Now

IXFN38N100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
38N100P Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFN38N100P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 38A Ω 210mΩ 300ns miniBLOC, SOT-227 B E153432 S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings	Original	IXFN38N100P 300ns OT-227 E153432 100ms 38N100P 7-14-09-D	PDF
Contextual Info: HiPerFETTM Power MOSFET IXFN38N100Q2 VDSS = 1000V ID25 = 38A Ω RDS on ≤ 250mΩ N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr ≤ 300ns trr miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings	Original	IXFN38N100Q2 300ns OT-227 E153432 38N100Q2 5-27-08-B	PDF
IXFN38N100Q2 Abstract: IXFB38N100Q2 Contextual Info: HiPerFETTM Power MOSFET IXFN38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.25 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	IXFN38N100Q2 OT-227 E153432 728B1 123B1 728B1 065B1 IXFN38N100Q2 IXFB38N100Q2	PDF
IXFN38N100p Abstract: 38N100P IRM38A IRM-38 Power Diode 1000V irm 38 38n100 Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFN38N100P VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 38A Ω 210mΩ 300ns miniBLOC, SOT-227 B E153432 S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings	Original	IXFN38N100P 300ns OT-227 E153432 100ms 38N100P 7-14-09-D IXFN38N100p IRM38A IRM-38 Power Diode 1000V irm 38 38n100	PDF
Contextual Info: Preliminary Technical Information IXFN38N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 38A ≤ 210mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	IXFN38N100P 300ns OT-227 E153432 38N100P 8-23-07-B	PDF
IXFN38N100Q2 Abstract: 38N100Q2 IXFN38N100 38N100 Contextual Info: HiPerFETTM Power MOSFET IXFN38N100Q2 VDSS = 1000V ID25 = 38A Ω RDS on ≤ 250mΩ N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr ≤ 300ns trr miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings	Original	IXFN38N100Q2 300ns OT-227 E153432 38N100Q2 5-27-08-B IXFN38N100Q2 IXFN38N100 38N100	PDF
IXFN38N100P Abstract: sot 227b diode fast IXFN38N100 Contextual Info: IXFN38N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFN38N100P 300ns OT-227 E153432 38N100P 4-03-08-C IXFN38N100P sot 227b diode fast IXFN38N100	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Contextual Info: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P	PDF