IXFH15N100P Search Results

IXFH15N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFH15N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 15A TO-247	Original	PDF		4

IXFH15N100P Price and Stock

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IXYS Corporation IXFH15N100P MOSFETs 15 Amps 1000V 0.76 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH15N100P					1 $12.56 10 $7.58 100 $7.58 1000 $6.20 10000 $6.20	Get Quote
Verical	IXFH15N100P		248		5	1 - 10 $10.58 100 $9.51 1000 $9.51 10000 $9.51	Buy Now
Future Electronics	IXFH15N100P	Tube		27 Weeks	300	1 - 10 - 100 $7.22 1000 $7.09 10000 $7.09	Buy Now
Quest Components	IXFH15N100P		5			1 $16.38 10 $14.56 100 $14.56 1000 $14.56 10000 $14.56	Buy Now
TTI	IXFH15N100P	Tube			300	1 - 10 - 100 - 1000 $6.20 10000 $6.20	Buy Now
Littelfuse Inc IXFH15N100P Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFH15N100P		60		1	1 $11.48 10 $11.48 100 $7.44 1000 $6.94 10000 $6.94	Buy Now

IXFH15N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) G D S Symbol Test Conditions	Original	IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P	PDF
Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH15N100P IXFV15N100P IXFV15N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) G D S Symbol Test Conditions Maximum Ratings VDSS	Original	IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P	PDF
IXFH15N100P Abstract: 15N100P F15N PLUS220SMD 15n10 IXFH15N100 Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G D S Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS	Original	IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P IXFH15N100P F15N PLUS220SMD 15n10 IXFH15N100	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250	PDF