F15N Search Results

LL1608-F15N

Abstract: LL1608-F2N7S 4000 LL1608-F2N2S LL1608-F6N8 LL1608F15n LL1608-F1N5S LL1608-F1N8S LL1608-F8N2 LL1608-F56N
Contextual Info: Sheet1 STANDARD DEVICES SELECTION GUIDE TYPE LL1608F TOKO Part Number LL1608-F1N2S LL1608-F1N5S LL1608-F1N8S LL1608-F2N2S LL1608-F2N7S LL1608-F3N3_* LL1608-F3N9_* LL1608-F4N7_* LL1608-F5N6_* LL1608-F6N8_* LL1608-F8N2 * LL1608-F10N_* LL1608-F12N_* LL1608-F15N_*

F15N

Abstract: ASK receiver IC atmel 928 dp 502 t LL2012-F15NJ SO20 T5750 T5760 T5760-TG T5760-TGQ
Contextual Info: T5760 / T5761 UHF ASK/FSK Receiver Description The T5760/T5761 is a multi-chip PLL receiver device supplied in an SO20 package. It has been especially developed for the demands of RF low-cost data transmission systems with data rates from 1 kBaud to 10 kBaud in

F15N05L

Abstract: F15N06L f15n05 RFP15N05L f15n RFM15N05L RFP15N06L RFM15N06L rca application notes RCA bipolar transistors
Contextual Info: Logic-Level Power MOSFETs File N u m be r 1558 RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET t e r m in a l d ia g r a m

F15NM60N

Abstract: p15nm60n W15NM60N STB15NM60N STF15NM60N STI15NM60N STP15NM60N STW15NM60N F15N
Contextual Info: STB15NM60N - STF/I15NM60N STP15NM60N - STW15NM60N N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB15NM60N 650V < 0.299Ω 14A STI15NM60N 650V < 0.299Ω

AN9321

Abstract: AN9322 RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 215e3
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

atmel 928

Abstract: SO20 T5750 T5760 T5760-TG T5760-TGQ T5761 T5761-TG T5761-TGQ K2232
Contextual Info: T5760 / T5761 UHF ASK/FSK Receiver Description The T5760/T5761 is a multi-chip PLL receiver device supplied in an SO20 package. It has been especially developed for the demands of RF low-cost data transmission systems with data rates from 1 kBaud to 10 kBaud in

5n06

Abstract: 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs [ /Title RFD1 5N06L E, RFD15 N06LE SM /Subject (15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil

ATC100A101JP150X

Abstract: mosfet power amplifier TRF7003 GRM220Y5V105Z010 GRM220Y GRM220 SOT-89 RPSS
Contextual Info: TRF7003 MOSFET POWER AMPLIFIER SLWS058B – APRIL 1997 – REVISED MARCH 1998 D D D D D D D D PK PACKAGE TOP VIEW Wide Operating Frequency Range up to 1000 MHz High Output Power: Typical Value of 32.5 dBm at 4.8 V and 900 MHz Typical Value of 29 dBm at 3.6 V

AN9321

Abstract: AN9322 RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

transistor d90 smd

Abstract: Type NS ceramic cap MIL-PRF-49464 F25CG0R2M1PX3 G10XXKITAPX05 bd-bj gap capacitors N220 P105 C11AH
Contextual Info: Company Overview Dielectric Laboratories, Inc. DLI is your global partner for application specific microwave and millimeter wave components serving customers in fiber optic, wireless, medical, transportation, semiconductor, space, avionics and military markets. With over 35 years of

NHI11

Abstract: TA1383AFG FVP110 T 455 N 2000 TOF 08 124 BH45 wd-hd1 SA03h 720P ktp30 525IP
Contextual Info: TA1383AFG TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA1383AFG NTSC Chroma Decoder, Multi-Point Scan Sync Processor, H/V Frequency Counter IC for Color TV TA1383AFG integrates an NTSC chroma decoder, multi-point scan sync processor equivalent to pin D4 , and H/V frequency

F15N05L

Abstract: F15N06L RFM15N06L RFM15N05L f15n05 RFP15N05L RFP15N06L tl225 RFP mosfets
Contextual Info: 3875081 G E SOLID STATE 01 DE|3ö7SDfll GD1A452 □ | ~ d T m3 1 ~ l I Logic-Level Power MOSFETs _ RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L F ile N u m b e r 1558 Power Logic Level MOSFETs T E R M IN A L D IA G R A M N-Channel Logic Level Power Field-Effect Transistors L2 FET

RFD15N06LESM

Abstract: AN7254 AN7260 AN9321 RFD15N06LE RFD15N06LESM9A 130E2
Contextual Info: RFD15N06LE, RFD15N06LESM S E M I C O N D U C T O R 15A, 60V, 0.065Ω, ESD Rated, Avalanche Rated, Logic Level, N-Channel Power MOSFET July 1996 Features Description • 15A, 60V The RFD15N06LE and RFD15N06LESM are N-Channel power MOSFETs manufactured using the MegaFET

Contextual Info: STB15NM60N - STF/I15NM60N STP15NM60N - STW15NM60N N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features VDSS @Tjmax Type RDS(on) ID 3 3 12 ) s ( ct 1 STB15NM60N 650V < 0.299Ω 14A STI15NM60N 650V

MOSFET Power Amp

Abstract: SLWS058C ATC100A101JP150 TRF7003 GRM220Y5V105Z010 ATC100A101JP150X
Contextual Info: TRF7003 MOSFET POWER AMPLIFIER SLWS058C – APRIL 1997 – REVISED JULY 1998 D D D D D D D D D D PK PACKAGE TOP VIEW Wide Operating Frequency Range up to 1000 MHz High Output Power: – Typical Value of 32 dBm at 4.8 V and 900 MHz – Typical Value of 29 dBm at 3.6 V and

F15N06L

Contextual Info: ti3G2271 0D5M773 Th? HAS R FM 15N 05L/06L R FP15N 05L/06L HARRIS N-Channel Logic Level Power Field-Effect Transistors L2 FET A ug ust 19 91 Package Features TO-204AA BOTTOM VIEW • 15A , 5 0 V and 6 0 V • rD S (O N ) = 0 .1 4 « DRAIN /( F L A N G E )

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

re 5 pe

Contextual Info: in te lai I RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power M O S F E Ts manufactured using the M egaFE T process. This process, which uses feature A p ril 1999 F ile N u m be r

F15N05L

Abstract: F15N06L f15n05 f15n06 N05L RFP15N06L 3SI4 RFM15N05L RFM15N06L RFP15N05L
Contextual Info: R F M 1 5 N 0 5 L /0 6 L H A IR R IS RFP15N05L/06L N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features T0-204A A BOTTOM VIEW • 15A, 50V and 60V • rDS(ON) = 0 .1 4 0 DRAIN ^ {F L A N G E ) SOURCE • Design Optimized for 5V Gate Drives

r0r5m

Abstract: F15N F20N R08M d286 1PX4 F25CG F25CG0R2M1PX3
Contextual Info: Binary Tunabl e Caps f or SLC Hybrids Bi-Cap Functional Applications: M atching N etw orks,Tank Cicuits, D ielectric resonatortuning/coupling. C1 C1 = 1 C2 = 2 x C 1 C3 = 4 x C 1 4 Pad C4 = 8 x C1 C2 C3 Benefits: •Sm allsize is com patible w ith m icrow ave geom etries.

atmel 928

Abstract: 1 khz fsk demodulator dp 502 t SO20 T5750 T5760 T5760-TGQ T5760-TGS T5761 T5761-TGQ
Contextual Info: T5760 / T5761 UHF ASK/FSK Receiver Description The T5760/T5761 is a multi-chip PLL receiver device supplied in an SO20 package. It has been especially developed for the demands of RF low-cost data transmission systems with data rates from 1 kBaud to 10 kBaud in

Bi-Cap

Contextual Info: Binary Tunable Caps for SLC Hybrids Bi-Cap Functional Applications: Matching Networks, Tank Cicuits, Dielectric resonator tuning/coupling. C1 C1 = 1 C2 = 2 x C 1 C3 = 4 x C 1 4 Pad C4 = 8 x C1 C2 C3 Benefits: • Small size is compatible with microwave geometries.

lenovo

Abstract: D1582 Maxim MAX8774 42W7622 447e lenovo r500 Maxim MAX8744 lenovo t42 winbond* wpct200 EC055
Contextual Info: CR-1 : @DESIGN.D3SDV SCH_1 :PAGE A B C D E F G H J K L M N DATE 20061220 EC NO. P PART Q NO. 42W7622 L11403 9 9 MLB-1 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37.

F15N06L

Abstract: RFP15N05L 15N05L F15N p15n06l FP15N05L
Contextual Info: RFM 15N 05L/06L RFP15N05L/06L h a r r is N -Channel Logic Level Power Field-Effect Transistors L2 FET August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 15A, 5 0 V and 60 V • rD S (O N ) = 0 .1 4 n SOURCE f • Design O p tim ized for 5V G ate Drives