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    5N06 Search Results

    5N06 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    G825N06211DEU
    		Amphenol Communications Solutions Pin Header 2.0mm Pitch Rightangle Surfacemount, 1x6Pin, FULL G/F, LCP, 3.2mm*2.0mm*2.8mm, T&R, W/CAP PDF
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    5N06 Price and Stock

    onsemi

    onsemi FDPF55N06

    Power MOSFET N-Channel UniFETTM 60 V 55 A 22 mΩ TO-220F
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    Master Electronics FDPF55N06 1,000
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    onsemi NTHL075N065SC1

    Silicon Carbide (SiC) MOSFET - EliteSiC 57 mohm 650 V M2 TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC 57 mohm 650 V M2 TO-247?3L
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    onsemi NTBGS1D5N06C

    Mosfet N-Ch 60V 267A To-263 Rohs Compliant: Yes |Onsemi NTBGS1D5N06C
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    Flip Electronics NTBGS1D5N06C 5,085
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    onsemi NVMJD015N06CLTWG

    Dual N−Channel Power MOSFET 60V 35A 15mΩ
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    Master Electronics NVMJD015N06CLTWG
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    onsemi NTBG015N065SC1

    Silicon Carbide (SiC) MOSFET - EliteSiC 12 mohm 650 V M2 D2PAK-7L
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    Find more 5N06 price and stock on Findchips.com

    5N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5n06

    Abstract: 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3
    Contextual Info: 5N06LE, 5N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs [ /Title RFD1 5N06L E, RFD15 N06LE SM /Subject (15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil


    Original     		rfd15n06lerfd15n06lesm5n06lrfd15+6n06le5n06rfd15n06lesm9atb334n06l215e3 PDF

    5n06

    Abstract: F1S25N06 302 s1b diode
    Contextual Info: 5N06, 5N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB


    Original     		rfp25n06rf1s25n06sm5n06so220ab+4o263ab5n06f1s25n06302 s1b diode PDF

    5n06v

    Abstract: 5n06 TMOS E-FET AG3B CASE369A
    Contextual Info: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER


    Original     		5n06v/curves5n06v5n06tmos e-fet+2ag3bcase369a PDF

    5n06

    Abstract: 5N05 S-6059 SGSP351 DIODE c335 17611 SEFP5N05 17610 SEFP5N06
    Contextual Info: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D r - 3 ? -tr : I: I, SEFP5N05 5N06 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V DSS T h e se p ro d ucts are diffused multi-cell silicon gate N -C h a n n e l e n ha ncem e nt m ode P o w e r-M o s field


    OCR Scan     		sefp5n05sefp5n060v/60v20kfl+10300/issgsp351100/iss-6059c-3355n065n05diode c3351761117610 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit PDF

    TP50N

    Abstract: MPT8N10
    Contextual Info: <8> MOTOROLA M C33091A High-Side TMOS Driver The MC33091A is a High-Side TMOS Driver designed for use in harsh automotive switching applications requiring the capability of handling high voltages attributed to load and field dump transients, as well as reverse and


    OCR Scan     		c33091amc33091atp50nmpt8n10 PDF

    5N05

    Abstract: 5n06 mtp5n05
    Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTP5N05 5N06 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS T M O S P O W E R FETs 5 AM PERES T h e s e T M O S P o w e r FETs a re d e s ig n e d f o r h ig h s p e e d p o w e r


    OCR Scan     		mtp5n055n055n06 PDF

    LTRG

    Abstract: P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06
    Contextual Info: cu R FM 15N 05/15N 06 R FP15N 05/15N 06 HARRIS N-Channel Enhancement Mode Power Field Effect Transistors M ay 1992 Packages Features TO -20 4 A A BOTTOM VIEW • 15A , 5 0 V and 6 0V • rD S o n = 0 .1 4 f l SOURCE y • S O A is P o w e r -D is s ip a tio n L im ite d


    OCR Scan     		05/15nfp15n32e-80e-10+868e-8ltrgp15n06rfp15n0515n065n06rfp15n06fm15n06 PDF

    5N06

    Contextual Info: 3QE D • T TS ^S B? S G S - T H O M ^ 7 # 005^07= 3 ■ ^ S O N M T P 1 5 N 0 5 L /F I ^ O g œ iltL tK g T O K Ü D g i M T P 1 5 N 0 6 L /F I s: G _s-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE MTP15N05L


    OCR Scan     		tp15n05ltp15n05lfitp15n06ltp15n06lfi+2500ms5n06 PDF

    5N05

    Abstract: 5n06 MTP5N05 MTP5N06 MTP4N08 MTP4N10 5n0506
    Contextual Info: <8> MTP4N08, MTP5N05 MTP4N10, 5N06 MOTOROLA D e s i g n e r ’s D a t a S h e e t 4.0 and 5.0 AMPERE N-CHANNEL TMOS POWER FET N -C H A N N E L ENHANCEM ENT M ODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTO R rDS on = 0-8 OHM 80 and 100 VOLTS These TMOS Power FETs are designed for low voltage, high


    OCR Scan     		mtp4n08mtp5n05mtp4n10mtp5n06+35n055n065n0506 PDF

    5n06

    Abstract: MTD5N05-1 369A MTD5N06
    Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD5N05 5N06 P o w e r Field E ffe c t T ra n sisto rs N -C h ann el E n hancem ent M o d e S ilic o n G ate T M O S D P A K fo r Su rfac e M o u n t or Insertion M ount TM O S POWER FETs 5 AMPERES


    OCR Scan     		mtd5n05-1mtd5n06-169a-04mtd5n05+3mtd5n065n06369a PDF

    5N10E

    Abstract: 5n05e 5N06E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D
    Contextual Info: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Small-Signal Transistor Dice Die type Recommended bond wire diam eter' nm Die topology Page -0 .8 .-2 .0 -0 .8 .-2 .0 SISC0.5P05E SISC3.2P05E 22 22 LA LC 1183 1183 - 1 .0 .-2 .0 SISC0.5P06E 22 LA 1183


    OCR Scan     		5p05e2p05e5p06e2p10e+142p20e4p24e2n05e5n05e5n06e5n65e5n10e5n06siscotransistor 11834n60e14n245p066n25d PDF

    5n06

    Abstract: diode c335 5N05 SEFP5N05 SEFP5N06
    Contextual Info: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D I: I, N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ^stg Ti


    OCR Scan     		7la-h37sefp5n05sefp5n060v/60v+4c-3355n06diode c3355n05 PDF

    5n06

    Abstract: w75n06 75n06
    Contextual Info: SGS-THOMSON 75N 06/fi S T W 7 5 N 06 sth N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S TH 75N 06 5N06FI S TH 75N 06 • • . ■ ■ . ■ ■ dss 60 V 60 V 60 V R DS on Id < 0 .0 1 4 ß < 0 .0 1 4 ß < 0 .0 1 4 ß 75 A 48 A 75 A T Y P IC A L RDS(on) = 0.011 Q


    OCR Scan     		06/fisth75n06fio-247o-218+35n06w75n0675n06 PDF