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    5N06 Search Results

    5N06 Datasheets (9)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge JMTQ35N06A
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 35A N-channel enhancement mode power MOSFET in a PDFN3x3-8L package with RDS(on) less than 15mΩ at VGS=10V and 20mΩ at VGS=4.5V, featuring advanced trench technology for low gate charge and high efficiency. Original PDF
    badge SL05N06Z
    		SLKOR 60V, ±20V, 150°C, -55 to 150°C, 5A, 20A, 5A, 200°C/W, 100mΩ@10V, 150mΩ@4.5V. Features: heat dissipation, low gate charge, fast switching. Application: power switching. Original PDF
    badge SK35N06
    		Shikues Semiconductor 60V N-Channel MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor Original PDF
    badge SL05N06A
    		SLKOR VDS 60V; ID 5.0A; RDS(ON) <100 mohm (VGS=10V), <120 mohm (VGS=4.5V); High density cell design; Excellent heat dissipation. Original PDF
    badge JMTC035N06D
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 180A N-channel enhancement mode power MOSFET in TO-220C package with RDS(on) less than 4.3 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency. Original PDF
    badge JMTP075N06A
    		Jiangsu JieJie Microelectronics Co Ltd N-channel enhancement mode power MOSFET with 60V drain-source voltage, 17A continuous drain current, and RDS(on) less than 9mΩ at VGS = 10V, available in SOP-8 package. Original PDF
    badge SKQ45N06AD
    		Shikues Semiconductor 60V N-Channel MOSFET, VDSS 60V, VGSS ±20V, TJ -50 to 150°C, RDS(ON) 9-17mΩ, PD 69W. Original PDF
    badge SL75N06Q
    		SLKOR Original PDF
    badge JMTE035N06D
    		Jiangsu JieJie Microelectronics Co Ltd 60V, 180A N-channel enhancement mode Power MOSFET in TO-263-3L package with RDS(on) less than 3.8 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency power management applications. Original PDF
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    5N06 Price and Stock

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    Infineon Technologies AG IPD25N06S4L30ATMA2

    MOSFET N-CH 60V 25A TO252-31
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD25N06S4L30ATMA2 Tape & Reel 10,000 2,500
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    Avnet Americas IPD25N06S4L30ATMA2 Tape & Reel 2,500 9 Weeks 2,500
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    Rochester Electronics IPD25N06S4L30ATMA2 168,382 1
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    Rutronik IPD25N06S4L30ATMA2 Tape & Reel 5,000 2,500
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    Chip One Stop IPD25N06S4L30ATMA2 Cut Tape 5,327 0 Weeks, 1 Days 1
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    Maritex IPD25N06S4L30ATMA2 20,000 1
    • 1 $0.41
    • 10 $0.37
    • 100 $0.33
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    Win Source Electronics IPD25N06S4L30ATMA2 70,740
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    PanJit Group PJD25N06A-AU_L2_000A1

    60V N-CHANNEL ENHANCEMENT MODE M
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    DigiKey () PJD25N06A-AU_L2_000A1 Digi-Reel 2,719 1
    • 1 $1.19
    • 10 $0.74
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    PJD25N06A-AU_L2_000A1 Cut Tape 2,719 1
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    Micro Commercial Components MCU95N06KY-TP

    N-CHANNEL MOSFET,DPAK
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    DigiKey () MCU95N06KY-TP Digi-Reel 2,500 1
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    • 10 $1.47
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    • 1000 $0.73
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    MCU95N06KY-TP Cut Tape 2,500 1
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    MCU95N06KY-TP Tape & Reel 2,500 2,500
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    Infineon Technologies AG IPD25N06S240ATMA2

    MOSFET N-CH 55V 29A TO252-31
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    DigiKey () IPD25N06S240ATMA2 Digi-Reel 2,414 1
    • 1 $1.36
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    IPD25N06S240ATMA2 Cut Tape 2,414 1
    • 1 $1.36
    • 10 $0.85
    • 100 $0.57
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    Rochester Electronics IPD25N06S240ATMA2 206,755 1
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    • 100 $0.42
    • 1000 $0.35
    • 10000 $0.31
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    Chip One Stop IPD25N06S240ATMA2 Cut Tape 2,400 0 Weeks, 1 Days 1
    • 1 $1.10
    • 10 $1.10
    • 100 $1.10
    • 1000 $1.10
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    Goford Semiconductor GT55N06D5

    N60V,RD(MAX)<9M@10V,RD(MAX)<13M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () GT55N06D5 Cut Tape 1,075 1
    • 1 $1.21
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    • 1000 $0.35
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    GT55N06D5 Digi-Reel 1,075 1
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    Chip One Stop GT55N06D5 Cut Tape 5,000 0 Weeks, 1 Days 5
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    Find more 5N06 price and stock on Findchips.com

    5N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5n06

    Abstract: 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3
    Contextual Info: 5N06LE, 5N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs [ /Title RFD1 5N06L E, RFD15 N06LE SM /Subject (15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil


    Original     		RFD15N06LE, RFD15N06LESM 5N06L RFD15 N06LE 5n06 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3 PDF

    5n06

    Abstract: F1S25N06 302 s1b diode
    Contextual Info: 5N06, 5N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB


    Original     		RFP25N06, RF1S25N06SM 5N06S O220AB O263AB 5n06 F1S25N06 302 s1b diode PDF

    5n06v

    Abstract: 5n06 TMOS E-FET AG3B CASE369A
    Contextual Info: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER


    Original     		5N06V/curves 5n06v 5n06 TMOS E-FET AG3B CASE369A PDF

    5n06

    Abstract: 5N05 S-6059 SGSP351 DIODE c335 17611 SEFP5N05 17610 SEFP5N06
    Contextual Info: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D r - 3 ? -tr : I: I, SEFP5N05 5N06 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V DSS T h e se p ro d ucts are diffused multi-cell silicon gate N -C h a n n e l e n ha ncem e nt m ode P o w e r-M o s field


    OCR Scan     		SEFP5N05 SEFP5N06 0V/60V 20Kfl) 300/is, SGSP351 100/is s-6059 C-335 5n06 5N05 DIODE c335 17611 17610 SEFP5N06 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    TP50N

    Abstract: MPT8N10
    Contextual Info: <8> MOTOROLA M C33091A High-Side TMOS Driver The MC33091A is a High-Side TMOS Driver designed for use in harsh automotive switching applications requiring the capability of handling high voltages attributed to load and field dump transients, as well as reverse and


    OCR Scan     		C33091A MC33091A MC33091A, MC33091A TP50N MPT8N10 PDF

    5N05

    Abstract: 5n06 mtp5n05
    Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTP5N05 5N06 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS T M O S P O W E R FETs 5 AM PERES T h e s e T M O S P o w e r FETs a re d e s ig n e d f o r h ig h s p e e d p o w e r


    OCR Scan     		MTP5N05 5N05 5n06 PDF

    LTRG

    Abstract: P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06
    Contextual Info: cu R FM 15N 05/15N 06 R FP15N 05/15N 06 HARRIS N-Channel Enhancement Mode Power Field Effect Transistors M ay 1992 Packages Features TO -20 4 A A BOTTOM VIEW • 15A , 5 0 V and 6 0V • rD S o n = 0 .1 4 f l SOURCE y • S O A is P o w e r -D is s ip a tio n L im ite d


    OCR Scan     		05/15N FP15N 32e-8 0e-10 68e-8 LTRG P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06 PDF

    5N06

    Contextual Info: 3QE D • T TS ^S B? S G S - T H O M ^ 7 # 005^07= 3 ■ ^ S O N M T P 1 5 N 0 5 L /F I ^ O g œ iltL tK g T O K Ü D g i M T P 1 5 N 0 6 L /F I s: G _s-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE MTP15N05L


    OCR Scan     		TP15N05L TP15N05LFI TP15N06L TP15N06LFI 500ms 5N06 PDF

    5N05

    Abstract: 5n06 MTP5N05 MTP5N06 MTP4N08 MTP4N10 5n0506
    Contextual Info: <8> MTP4N08, MTP5N05 MTP4N10, 5N06 MOTOROLA D e s i g n e r ’s D a t a S h e e t 4.0 and 5.0 AMPERE N-CHANNEL TMOS POWER FET N -C H A N N E L ENHANCEM ENT M ODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTO R rDS on = 0-8 OHM 80 and 100 VOLTS These TMOS Power FETs are designed for low voltage, high


    OCR Scan     		MTP4N08, MTP5N05 MTP4N10, MTP5N06 5N05 5n06 MTP5N06 MTP4N08 MTP4N10 5n0506 PDF

    5n06

    Abstract: MTD5N05-1 369A MTD5N06
    Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD5N05 5N06 P o w e r Field E ffe c t T ra n sisto rs N -C h ann el E n hancem ent M o d e S ilic o n G ate T M O S D P A K fo r Su rfac e M o u n t or Insertion M ount TM O S POWER FETs 5 AMPERES


    OCR Scan     		MTD5N05-1, MTD5N06-1 69A-04 MTD5N05, MTD5N06 5n06 MTD5N05-1 369A MTD5N06 PDF

    5N10E

    Abstract: 5n05e 5N06E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D
    Contextual Info: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Small-Signal Transistor Dice Die type Recommended bond wire diam eter' nm Die topology Page -0 .8 .-2 .0 -0 .8 .-2 .0 SISC0.5P05E SISC3.2P05E 22 22 LA LC 1183 1183 - 1 .0 .-2 .0 SISC0.5P06E 22 LA 1183


    OCR Scan     		5P05E 2P05E 5P06E 2P10E 2P20E 4P24E 2N05E 5N05E 5N06E 5N65E 5N10E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D PDF

    5n06

    Abstract: diode c335 5N05 SEFP5N05 SEFP5N06
    Contextual Info: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D I: I, N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ^stg Ti


    OCR Scan     		7la-H37 SEFP5N05 SEFP5N06 0V/60V C-335 5n06 diode c335 5N05 SEFP5N06 PDF

    5n06

    Abstract: w75n06 75n06
    Contextual Info: SGS-THOMSON 75N 06/fi S T W 7 5 N 06 sth N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S TH 75N 06 5N06FI S TH 75N 06 • • . ■ ■ . ■ ■ dss 60 V 60 V 60 V R DS on Id < 0 .0 1 4 ß < 0 .0 1 4 ß < 0 .0 1 4 ß 75 A 48 A 75 A T Y P IC A L RDS(on) = 0.011 Q


    OCR Scan     		06/fi STH75N06FI O-247 O-218 5n06 w75n06 75n06 PDF