RFD15 Search Results

AN9321

Abstract: AN9322 RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 215e3
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

D15P05

Contextual Info: * f* 3 2 S RFD15P05, RFD15P05SM, RFP15P05 -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A,-50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­

RFP15P05

Abstract: RFD15P05SM RFD15P05 RFD15P05SM9A F15P05
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 S E M I C O N D U C T O R 15A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Packaging Features JEDEC TO-220AB • 15A, 50V SOURCE DRAIN GATE • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model

RF1S42N03L

Contextual Info: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM

D15P05

Abstract: RFP15P05 RFD15P05 RFD15P05SM TB334 d15p0 rfd15 D15p05 harris
Contextual Info: [ /Title RFD15 P05, RFD15 P05SM, RFP15 P05 /Subject (15A, 50V, 0.150 RFD15P05, RFD15P05SM, RFP15P05 Semiconductor -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A, -50V These are P-Channel power MOSFETs manufactured using

5n06

Abstract: 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs [ /Title RFD1 5N06L E, RFD15 N06LE SM /Subject (15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil

AN9321

Abstract: AN9322 RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

F15P06

Abstract: RFD15P06SM9A RFD15P06 RFD15P06SM RFP15P06 TB334
Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 60V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

RFD15N06LESM

Abstract: AN7254 AN7260 AN9321 RFD15N06LE RFD15N06LESM9A 130E2
Contextual Info: RFD15N06LE, RFD15N06LESM S E M I C O N D U C T O R 15A, 60V, 0.065Ω, ESD Rated, Avalanche Rated, Logic Level, N-Channel Power MOSFET July 1996 Features Description • 15A, 60V The RFD15N06LE and RFD15N06LESM are N-Channel power MOSFETs manufactured using the MegaFET

Contextual Info: RFD15N06LE, RFD15N06LESM Semiconductor D ata S h eet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

F15P06

Abstract: RFD15P06 RFD15P06SM RFD15P06SM9A RFP15P06 TB334
Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet January 2002 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs Features • 15A, 60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives

2671I

Abstract: D15P05 RFP15P05 673E-9
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 f f l H A R R IS CKJ 15A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JE D EC TO-22QAB • 15A ,50V ’ *”d s o n = 0 .1 5 0 1 2 • Temperature Compensating PSPICE Model

Contextual Info: * f* 3 2 S RFD15P06, RFD15P06SM, RFP15P06 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Description Features 15A, 60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­

D15P05

Abstract: RFP15P05 RFD15P05 RFD15P05SM RFD15P05SM9A TB334
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 50V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

F15P06

Abstract: RFD15P06 RFD15P06SM RFD15P06SM9A RFP15P06 f15p
Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 S E M I C O N D U C T O R 15A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Packaging Features JEDEC TO-220AB • 15A, 60V SOURCE DRAIN GATE • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model

F15P06

Abstract: RFD15P06SM9A RFD15P06 RFD15P06SM RFP15P06 TB334
Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet Title FD1 06, D15 6S P15 6 bt A, V, 50 m, anwer OSTs) utho eyrds ter- July 1999 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature

D15P05

Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs [ /Title RFD1 5P05, RFD15 P05S M, RFP15 P05 /Subject (15A, 50V, 0.150 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power

Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 £11 HARRIS “ ' S ' - ' C ' - ' " * ' 15A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packaging Features JE D E C TO -22ÛAB • 15A, 60V SOURCE • rDS ON = 0.15012 • Temperature Compensating PSPICE Model

f15p06

Abstract: TA09833 15A60 15A60V
Contextual Info: in te r r ii RFD15P06, RFD15P06SM, RFP15P06 Data S h e e t J u ly 1999 Features 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs • 15A.60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives

D15P05

Abstract: RFD15P05 RFP15P05
Contextual Info: in te r« ! RFD15P05, RFD15P05SM, RFP15P05 D a ta S h e e t J u ly 1 9 9 9 15A, SOV, 0.150 Ohm, P-Channel Power MOSFETs Features Formerly developmental type TA09833. PACKAGE * rDS ON = 0-1500 ♦ Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve

D15P05

Abstract: RFP15P05 P-channel MOSFET VGS -25V transistor RFD15P05 RFD15P05SM RFD15P05SM9A TB334 RFD15P05 d15p0
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet January 2002 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs Features • 15A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives

rneg2

Contextual Info: QT1F-Plus Device Quad T1 Framer-Plus TXC-03103C DESCRIPTION • D4 SF, ESF including HDLC Link support , and transparent framing modes • Encodes/decodes AMI/B8ZS and forced ones density line codes • Fractional T1 gapped clock • Monitor function for frame pulse, clock and data

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Complementary MOSFETs buz11

Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12