TA49165 Search Results

AN9321

Abstract: AN9322 RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 215e3
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

5n06

Abstract: 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs [ /Title RFD1 5N06L E, RFD15 N06LE SM /Subject (15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil

AN9321

Abstract: AN9322 RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

RFD15N06LESM

Abstract: AN7254 AN7260 AN9321 RFD15N06LE RFD15N06LESM9A 130E2
Contextual Info: RFD15N06LE, RFD15N06LESM S E M I C O N D U C T O R 15A, 60V, 0.065Ω, ESD Rated, Avalanche Rated, Logic Level, N-Channel Power MOSFET July 1996 Features Description • 15A, 60V The RFD15N06LE and RFD15N06LESM are N-Channel power MOSFETs manufactured using the MegaFET

Contextual Info: RFD15N06LE, RFD15N06LESM Semiconductor D ata S h eet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

23N06

Abstract: RFP23N06LE RF1S23N06LESM RF1S23N06LESM9A TB334 FP23N06L
Contextual Info: NS ESIG : D NEW ents FOR placem D E e END le R 9P3 OMM d Possib UF7641 19S3S C E H R 4 e NOT mmend LE: see e HUF76 6 o e c s e Data Sheet N : R 23 M RFP N06LES 3 2 RF1S 23A, 60V, 0.065 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

re 5 pe

Contextual Info: in te lai I RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power M O S F E Ts manufactured using the M egaFE T process. This process, which uses feature A p ril 1999 F ile N u m be r

FP23N06L

Abstract: 23N06LE 23n06
Contextual Info: ? *3 2 £ RFP23N06LE, RF1S23N06LE, RF1S23N06LESM 23A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs S e p te m b e r 1998 Features Description • 23A, 60V T hese are N -C hannel po w e r M O S F E T s m anufactured using the M eg aF E T process. T his process, w h ich uses feature

AN7254

Abstract: RF1S23N06LE RF1S23N06LESM RF1S23N06LESM9A RFP23N06LE 23N06
Contextual Info: RFP23N06LE, RF1S23N06LE, RF1S23N06LESM S E M I C O N D U C T O R 23A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Packaging JEDEC TO-220AB • 23A, 60V SOURCE DRAIN GATE • rDS ON = 0.065Ω • 2kV ESD Protected