TIC 106 PSPICE
Abstract: FP23N06L tic 263a FP23N06
Contextual Info: FP23N06LE, RF1S23N06LE, RF1S23N06LESM HARRIS S E M I C O N D U C T O R 23A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JE D E C T O -220A B • 23 A ,60V • rDS ON = 0.065i2
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rfp23n06lerf1s23n06lerf1s23n06lesm-220a+10065i2-262a99e-471e-1227e-273e-5tic 106 pspicefp23n06ltic 263afp23n06
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23N06
Abstract: RFP23N06LE RF1S23N06LESM RF1S23N06LESM9A TB334 FP23N06L
Contextual Info: NS ESIG : D NEW ents FOR placem D E e END le R 9P3 OMM d Possib UF7641 19S3S C E H R 4 e NOT mmend LE: see e HUF76 6 o e c s e Data Sheet N : R 23 M RFP N06LES 3 2 RF1S 23A, 60V, 0.065 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using
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uf76419fp23n06ta4916523n06+5rfp23n06lerf1s23n06lesmrf1s23n06lesm9atb334fp23n06l
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FP23N06L
Abstract: 23N06LE 23n06
Contextual Info: ? *3 2 £ FP23N06LE, RF1S23N06LE, RF1S23N06LESM 23A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs S e p te m b e r 1998 Features Description • 23A, 60V T hese are N -C hannel po w e r M O S F E T s m anufactured using the M eg aF E T process. T his process, w h ich uses feature
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rfp23n06lerf1s23n06lerf1s23n06lesmta49165+999e-427e-273e-510e-633e-634e-3fp23n06l23n06le23n06
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AN7254
Abstract: RF1S23N06LE RF1S23N06LESM RF1S23N06LESM9A RFP23N06LE 23N06
Contextual Info: FP23N06LE, RF1S23N06LE, RF1S23N06LESM S E M I C O N D U C T O R 23A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Packaging JEDEC TO-220AB • 23A, 60V SOURCE DRAIN GATE • rDS ON = 0.065Ω • 2kV ESD Protected
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rfp23n06lerf1s23n06lerf1s23n06lesmo-220ab+6175oco-262aa1-800-4-harrisan7254rf1s23n06lesm9a23n06
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