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    20N60A4D Price and Stock

    Fairchild Semiconductor Corporation

    Fairchild Semiconductor Corporation HGTG20N60A4D

    600 V, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247
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    ComSIT USA HGTG20N60A4D 21
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    Win Source Electronics HGTG20N60A4D 1,847
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    20N60A4D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HGTG20N60A4D

    Contextual Info: 20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		hgtg20n60a4d150octa49339ta49372 PDF

    20N60A4D

    Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247
    Contextual Info: 20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		hgtg20n60a4d150octa49339ta49372+620n60a4d20n60a4ta49341ifm110ld26to247 PDF

    20n60a4d

    Abstract: HGTG20N60A4D TA49372
    Contextual Info: 20N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		hgtg20n60a4d150octa49339ta49372+120n60a4d PDF

    20N60A4D

    Abstract: 20N60A4 TA49372 HGTG20N60A4D 20n60 20N60A HGT4E20N60A4DS TA49339 TA49341 HGTG*N60A4D
    Contextual Info: 20N60A4D, 20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		hgtg20n60a4dhgt4e20n60a4ds150octa49339+7ta4937220n60a4d20n60a420n6020n60ata49341hgtg*n60a4d PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note PDF

    20N60A4D

    Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49372 mosfet 20a 300v P channel 600v 20a IGBT LD26 TA49339
    Contextual Info: 20N60A4D Data Sheet October 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		hgtg20n60a4d150octa49339ta49372+620n60a4d20n60a4ta49341mosfet 20a 300vp channel 600v 20a igbtld26 PDF

    20n60a4d

    Abstract: TA49372 20N60A4 HGTG*N60A4D TA49341 HGTG20N60A4D LD26 TA49339 HGTG
    Contextual Info: 20N60A4D Data Sheet October 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original     		hgtg20n60a4d150octa49339ta49372+620n60a4d20n60a4hgtg*n60a4dta49341ld26hgtg PDF