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20N60A4 Datasheets (1)

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Fairchild Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20N60A4		Fairchild Semiconductor	600V, SMPS Series N-Channel IGBTsnull	Original	PDF	236.67KB	8

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Fairchild Semiconductor Corporation HGTG20N60A4 Trans IGBT Chip N-CH 600V 70A 290W 3-Pin(3+Tab) TO-247 Tube
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Bristol Electronics	HGTG20N60A4		5,010			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation HGT1S20N60A4S9A Trans IGBT Chip N-CH 600V 70A 290W 3-Pin(2+Tab) D2PAK T/R
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Bristol Electronics	HGT1S20N60A4S9A		150			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi HGTP20N60A4 IGBT-Single 600V 70A 290W TO-220-3 Tube
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Rochester Electronics	HGTP20N60A4		11		1	1 - 10 - 100 $1.72 1000 $1.54 10000 $1.45	Buy Now
Fairchild Semiconductor Corporation HGTG20N60A4D 600 V, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247
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ComSIT USA	HGTG20N60A4D		21			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	HGTG20N60A4D		1,847			1 - 10 - 100 $3.98 1000 $3.57 10000 $3.57	Buy Now
Intersil Corporation HGTG20N60A4 IN STOCK SHIP TODAY
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Component Electronics, Inc	HGTG20N60A4		2			1 $6.15 10 $6.15 100 $4.62 1000 $4.00 10000 $4.00	Buy Now

20N60A4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TA49372 Abstract: 20N60A4 equivalent Contextual Info: 20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The 20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	hgt1s20n60a4s9a 150oc 100khz 200khz +3125oc ta49372 20n60a4 equivalent	PDF
HGTG20N60A4D Contextual Info: 20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a	Original	hgtg20n60a4d 150oc ta49339 ta49372	PDF
20N60A4 Abstract: 20N60A4 equivalent IGBT 20n60a4 HGTG20N60A4 HGTP20N60A4 TA49372 20N60A mosfet 20a 300v HGTG20N60A4D LD26 Contextual Info: 20N60A4, 20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The 20N60A4 and 20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	hgtg20n60a4 hgtp20n60a4 150oc 100khz +10200khz 125oc 20n60a4 20n60a4 equivalent igbt 20n60a4 ta49372 20n60a mosfet 20a 300v hgtg20n60a4d ld26	PDF
20N60A4D Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247 Contextual Info: 20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a	Original	hgtg20n60a4d 150oc ta49339 ta49372 +620n60a4d 20n60a4 ta49341 ifm110 ld26 to247	PDF
20N60A4 Abstract: 20N60A4 equivalent TA49339 Contextual Info: 20N60A4, 20N60A4 Data Sheet October 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The 20N60A4 and 20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	hgtg20n60a4 hgtp20n60a4 150oc ta49339 +3100khz 20n60a4 20n60a4 equivalent	PDF
20N60A4 Abstract: 20N60A4 equivalent TA49339 IGBT 20n60a4 20N60A HGTG20N60A4 ICE 280 HGTG20N60A4D HGTP20N60A4 LD26 Contextual Info: 20N60A4, 20N60A4 Data Sheet Title GT 0N6 4, GTP N60 bt 0V, MPS ries October 1999 600V, SMPS Series N-Channel IGBTs Features The 20N60A4 and 20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	hgtg20n60a4 hgtp20n60a4 150oc 100khz +820n60a4 20n60a4 equivalent ta49339 igbt 20n60a4 20n60a ice 280 hgtg20n60a4d ld26	PDF
20n60a4d Abstract: HGTG20N60A4D TA49372 Contextual Info: 20N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input	Original	hgtg20n60a4d 150oc ta49339 ta49372 +120n60a4d	PDF
20N60A4 equivalent Contextual Info: 20N60A4 Data Sheet November 2013 File Number 600 V SMPS IGBT Features The 20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high	Original	hgtg20n60a4 ta49339 o-247 20n60a4 equivalent	PDF
Contextual Info: 20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The 20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	hgt1s20n60a4s9a 150oc 100khz 200khz +1125oc	PDF
20N60A4D Abstract: 20N60A4 TA49372 HGTG20N60A4D 20n60 20N60A HGT4E20N60A4DS TA49339 TA49341 HGTG*N60A4D Contextual Info: 20N60A4D, 20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	hgtg20n60a4d hgt4e20n60a4ds 150oc ta49339 +7ta49372 20n60a4d 20n60a4 20n60 20n60a ta49341 hgtg*n60a4d	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-intersil ms-012aa mo-153aa rf1k49090 +16rf1k49093 rf1k49092 itf87056dqt itf87072dk8t itf87008dqt rf1k49223 65e9 transistor transistor 75307d transistor 65e8 sd mosfet drive datasheet 4468 8 pin g40n60 rhr15120 equivalent 10n120bnd 76107d transistor 76121d emerson three phase dc motor driver service note	PDF
20N60A4 Abstract: 20N60A4 equivalent HGTGN60A4D hg20n60 Commit TA49372 marking 20n60a4 IGBT 20n60a4 igbt fairchild 20n60a4 HGTP20N60A4 Contextual Info: 20N60A4, 20N60A4 Data Sheet April 2013 600 V SMPS IGBT Features The 20N60A4 and 20N60A4 are combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications	Original	hgtg20n60a4 hgtp20n60a4 ta49339 o-220ab +920n60a4 20n60a4 equivalent hgtgn60a4d hg20n60 commit ta49372 marking 20n60a4 igbt 20n60a4 igbt fairchild 20n60a4	PDF
20N60A4D Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49372 mosfet 20a 300v P channel 600v 20a IGBT LD26 TA49339 Contextual Info: 20N60A4D Data Sheet October 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input	Original	hgtg20n60a4d 150oc ta49339 ta49372 +620n60a4d 20n60a4 ta49341 mosfet 20a 300v p channel 600v 20a igbt ld26	PDF
20N60A4 Abstract: 20N60A4 equivalent HGTP20N60A4 HGTG20N60A4 HGTG20N60A4D TA49339 TA49372 TB334 IGBT 20n60a4 Contextual Info: 20N60A4, 20N60A4 Data Sheet October 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The 20N60A4 and 20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have	Original	hgtg20n60a4 hgtp20n60a4 150oc 100khz +720n60a4 20n60a4 equivalent hgtg20n60a4d ta49339 ta49372 tb334 igbt 20n60a4	PDF