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    75307D Search Results

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    75307D Price and Stock

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    Harris Semiconductor HUF75307D3

    MOSFET N-Channel 55V 15A (Tc) IPAK Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF75307D3 8,110 1
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    • 100 $0.59
    • 1000 $0.49
    • 10000 $0.44
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    Component Electronics, Inc HUF75307D3 41
    • 1 $0.62
    • 10 $0.62
    • 100 $0.46
    • 1000 $0.40
    • 10000 $0.40
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    Harris Semiconductor HUF75307D3ST

    MOSFET N-Channel 55V 15A (Tc) TO-252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF75307D3ST 2,500 1
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    • 100 $0.48
    • 1000 $0.39
    • 10000 $0.35
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    Fairchild Semiconductor Corporation HUF75307D3ST

    15A, 55V, 0.090 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 15A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HUF75307D3ST 2,400
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    Win Source Electronics HUF75307D3ST 1,271
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    • 1000 $0.16
    • 10000 $0.14
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    Fairchild Semiconductor Corporation HUF75307D3S

    15A, 55V, 0.090 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 15A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HUF75307D3S 1,975
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    Win Source Electronics HUF75307D3S 2,500
    • 1 -
    • 10 -
    • 100 $0.91
    • 1000 $0.61
    • 10000 $0.61
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    75307D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    75307

    Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
    Contextual Info: HUF75307P3, 75307D3, 75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    huf75307p3huf75307d3huf75307d3s75307+575307dtransistor 75307dhuf75307d3stta75307tb334 PDF

    75307

    Abstract: 75307d transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 UFA7
    Contextual Info: HUFA75307P3, 75307D3, 75307D3S Data Sheet November 2000 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs Title UFA7 07P3, UFA7 07D3, UFA7 07D3 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


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    hufa75307p3hufa75307d3hufa75307d3s75307+675307dtransistor 75307dhufa75307d3stta75307tb334ufa7 PDF

    Contextual Info: HUF75307P3, 75307D3, 75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    huf75307p3huf75307d3huf75307d3shuf75307 PDF

    75307D

    Abstract: AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 75307P KP-03
    Contextual Info: HUF75307P3, 75307D3, 75307D3S S E M I C O N D U C T O R 13A, 55V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs April 1998 Features Description • 13A, 55V • Ultra Low On-Resistance, rDS ON = 0.090Ω • Diode Exhibits Both High Speed and Soft Recovery


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    huf75307p3huf75307d3huf75307d3stb334+71-800-4-harris75307dan9321huf75307d3stta7530775307pkp-03 PDF

    75307D

    Contextual Info: HUF75307P3, 75307D3, 75307D3S Semiconductor Data Sheet March 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    huf75307p3huf75307d3huf75307d3shuf75307+175307d PDF

    75307D

    Abstract: 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334
    Contextual Info: HUF75307P3, 75307D3, 75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    huf75307p3huf75307d3huf75307d3s43cts+775307d75307transistor 75307dta75307an9321huf75307d3sttb334 PDF

    75307D

    Abstract: 75307P TA75307 HUF75307D3
    Contextual Info: HUF75307P3, 75307D3, 75307D3S in t e r s il J u n e !99 9 D a ta S h e e t 15A, 55V, 0.090 Ohm, N-ChanneI UitraFET Power MOSFETs Th ese N-Channel power M O SFETs are manufactured using the File N u m b e r 4 3 5 3 .6 Features • 15A, 55V • Simulation Models


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    huf75307p3huf75307d3huf75307d3san7254+4an726075307d75307pta75307 PDF

    75307

    Abstract: kp-03 lambda LAS 14 AU 75307*p lambda* lis
    Contextual Info: HUF75307P3, 75307D3, 75307D3S HARRIS S E M I C O N D U C T O R 13A, 55V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs January 1998 MM Features • 13A, 55V • Ultra Low On-Resistance, ro s O N = 0 .0 9 0 i2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan
    huf75307p3huf75307d3huf75307d3stb334+61-800-4-harris75307kp-03lambda las 14 au75307*plambda* lis PDF

    75307d

    Contextual Info: HUFA75307P3, 75307D3, 75307D3S TM Data Sheet November 2000 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    hufa75307p3hufa75307d3hufa75307d3s75307d PDF

    75307D

    Abstract: HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 TC114E
    Contextual Info: HUF75307P3, 75307D3, 75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    huf75307p3huf75307d3huf75307d3s75307d+4huf75307d3stta75307tb334tc114e PDF

    75307

    Abstract: 75307d transistor 75307D AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 75307*p
    Contextual Info: HUF75307P3, 75307D3, 75307D3S S E M I C O N D U C T O R 13A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 13A, 55V The HUF75307 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


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    huf75307p3huf75307d3huf75307d3shuf75307+81-800-4-harris7530775307dtransistor 75307dan9321huf75307d3stta7530775307*p PDF

    75307D

    Contextual Info: HUF75307P3, 75307D3, 75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    huf75307p3huf75307d3huf75307d3s75307d PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note PDF

    75307D

    Abstract: 75307 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
    Contextual Info: HUF75307P3, 75307D3, 75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    huf75307p3huf75307d3huf75307d3shuf75307+575307d75307huf75307d3stta75307tb334 PDF

    75307

    Abstract: 75307D transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 TC114E
    Contextual Info: HUFA75307P3, 75307D3, 75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    hufa75307p3hufa75307d3hufa75307d3s75307+675307dtransistor 75307dhufa75307d3stta75307tb334tc114e PDF