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    onsemi HGTG30N60A4D

    - Rail/Tube (Alt: HGTG30N60A4D)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HGTG30N60A4D Tube 90
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    • 100 $8.74
    • 1000 $8.32
    • 10000 $8.22
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    Flip Electronics HGTG30N60A4D 22,627
    • 1 $6.82
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    • 100 $6.82
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    Vishay Intertechnologies SIHG30N60AEL-GE3

    - Tape and Reel (Alt: SIHG30N60AEL-GE3)
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    Avnet Americas SIHG30N60AEL-GE3 Tape & Reel 500
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    Mouser Electronics SIHG30N60AEL-GE3
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    onsemi HGTG30N60A4

    IGBT-Single 600V 75A 463W TO247-3 Tube
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    Rochester Electronics HGTG30N60A4 72 1
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    • 100 $2.99
    • 1000 $2.68
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    Vishay Intertechnologies SIHG30N60AELGE3

    Power Field-Effect Transistor, 28A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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    ComSIT USA SIHG30N60AELGE3 500
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    Fairchild Semiconductor Corporation HGTG30N60A4D

    IGBT-Single 600V 70A 463W TO247-3 Tube
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    ComSIT USA HGTG30N60A4D 210
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    Win Source Electronics HGTG30N60A4D 4,944
    • 1 -
    • 10 $17.04
    • 100 $13.85
    • 1000 $13.85
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    G30N60A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    G30N60A4

    Abstract: HGTG30N60A4 IGBT G30N60A4 g30n60a smart ups 750 circuit g30n60 247A03
    Contextual Info: G30N60A4 Data Sheet April 2013 600V SMPS IGBT Features The G30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high


    Original     		hgtg30n60a4ta49343o-247g30n60a4+5igbt g30n60a4g30n60asmart ups 750 circuitg30n60247a03 PDF

    g30n60a4

    Abstract: g30n60a IGBT G30N60A4 TA49343 G30N60A4 transistor g30n60 12V 30A diode HGTG30N60A4 TA49373 ICE 280
    Contextual Info: G30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		hgtg30n60a4150oc100khz200khz+10125ocg30n60a4g30n60aigbt g30n60a4ta49343g30n60a4 transistorg30n6012v 30a diodeta49373ice 280 PDF

    G30N60A4

    Abstract: G30N60A G30N60 IGBT G30N60A4 TA49343 TA49373 HGTG30N60A4 G30N60A4 transistor LD26
    Contextual Info: G30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		hgtg30n60a4150oc100khz200khz+9125ocg30n60a4g30n60ag30n60igbt g30n60a4ta49343ta49373g30n60a4 transistorld26 PDF

    g30n60a4

    Abstract: IGBT G30N60A4 G30N60A HGTG30N60A4 TA49343 G30N60A4 transistor LD26 TA49373
    Contextual Info: G30N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		hgtg30n60a4150oc100khz200khz+8125ocg30n60a4igbt g30n60a4g30n60ata49343g30n60a4 transistorld26ta49373 PDF

    G30N60a4

    Abstract: G30N60A IGBT G30N60A4 G30N60 TA49343 G30N60A4 transistor HGTG30N60A4 HGTP30N60A4D ICE 280 TA49373
    Contextual Info: G30N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a


    Original     		hgtg30n60a4150oc100khz200khz+10125ocg30n60a4g30n60aigbt g30n60a4g30n60ta49343g30n60a4 transistorhgtp30n60a4dice 280ta49373 PDF

    G30N60A4

    Abstract: hgtp30n60a4
    Contextual Info: G30N60A4 Data Sheet November 2013 600 V SMPS IGBT Features The G30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high


    Original     		hgtg30n60a4ta49343g30n60a4hgtp30n60a4 PDF

    g30n60a4

    Abstract: g30n60 IGBT G30N60A4 G30N60A4 transistor G30N60A HGTG30N60A4 LD26 TA49343 TA49373
    Contextual Info: G30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		hgtg30n60a4150oc100khz200khz+9125ocg30n60a4g30n60igbt g30n60a4g30n60a4 transistorg30n60ald26ta49343ta49373 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note PDF

    G30N60A4

    Abstract: HGTG30N60A4
    Contextual Info: G30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The G30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		hgtg30n60a4150oc100khz200khz+2125ocg30n60a4 PDF