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onsemi HGTP3N60A4D - Rail/Tube (Alt: HGTP3N60A4D)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HGTP3N60A4D	Tube			400	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation HGTD3N60A4S IGBT-Single 600V 17A 70W TO-252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTD3N60A4S		2,005		1	1 - 10 - 100 $0.58 1000 $0.48 10000 $0.43	Buy Now
Fairchild Semiconductor Corporation HGTP3N60A4 IGBT-Single 600V 17A 70W TO-220-3 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTP3N60A4		106,700		1	1 - 10 - 100 $1.56 1000 $1.29 10000 $1.15	Buy Now
Fairchild Semiconductor Corporation HGTP3N60A4D IGBT-Single 600V 17A 70W TO-220-3 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTP3N60A4D		25,328		1	1 - 10 - 100 $1.56 1000 $1.29 10000 $1.15	Buy Now
Harris Semiconductor HGTP3N60A4 IGBT-Single 600V 17A 70W TO-220-3 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTP3N60A4		638		1	1 - 10 - 100 $1.56 1000 $1.29 10000 $1.15	Buy Now

3N60A4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
3N60A4D Abstract: 3n60a4 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D N-Channel mosfet 400v 25A Contextual Info: 3N60A4DS, 3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	hgt1s3n60a4ds hgtp3n60a4d 150oc ta49327 +5ta49369 3n60a4d 3n60a4 hgt1s3n60a4ds9a n-channel mosfet 400v 25a	PDF
3n60a4 Abstract: BH Ra transistor equivalent 3N60A4 3N60A4 equivalent HGTD3N60A4S A9688 ice 265 vqe 24 e HGT1S3N60A4S HGT1S3N60A4S9A Contextual Info: 3N60A4S, 3N60A4S, 3N60A4 in te r r ii J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT 4825 Features The 3N60A4S, 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and	OCR Scan	hgtd3n60a4s hgt1s3n60a4s hgtp3n60a4 ta49327 +10o-263ab 330mm 3n60a4 bh ra transistor equivalent 3n60a4 3n60a4 equivalent a9688 ice 265 vqe 24 e hgt1s3n60a4s9a	PDF
3n60a4 Abstract: 3N60 HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 HGTP3N60A4D TB334 Contextual Info: 3N60A4S, 3N60A4S, 3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 3N60A4S, 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input	Original	hgtd3n60a4s hgt1s3n60a4s hgtp3n60a4 150oc +6100khz 3n60a4 3n60 hgt1s3n60a4s9a hgtp3n60a4d tb334	PDF
3n60a4d Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3n60 Contextual Info: 3N60A4DS, 3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	hgt1s3n60a4ds hgtp3n60a4d 150oc ta49327 +4ta49369 3n60a4d hgt1s3n60a4ds9a 3n60	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-intersil ms-012aa mo-153aa rf1k49090 +16rf1k49093 rf1k49092 itf87056dqt itf87072dk8t itf87008dqt rf1k49223 65e9 transistor transistor 75307d transistor 65e8 sd mosfet drive datasheet 4468 8 pin g40n60 rhr15120 equivalent 10n120bnd 76107d transistor 76121d emerson three phase dc motor driver service note	PDF
3N60A4D Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688 Contextual Info: 3N60A4DS, 3N60A4D in t e r r i i J a n u a ry . D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	OCR Scan	hgt1s3n60a4ds hgtp3n60a4d ta49327 ta49369 +43n60a4d hgt1s3n60a4ds9a 5lec a9688	PDF
3N60A4 Abstract: HGTD3N60A4S HGTP3N60A4 HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334 transistor equivalent 3N60A4 Contextual Info: 3N60A4S, 3N60A4S, 3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 3N60A4S, 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input	Original	hgtd3n60a4s hgt1s3n60a4s hgtp3n60a4 150oc +6100khz 3n60a4 hgt1s3n60a4s9a hgtp3n60a4d tb334 transistor equivalent 3n60a4	PDF
3N60A4 Abstract: HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 TB334 Contextual Info: 3N60A4S, 3N60A4S, 3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 3N60A4S, 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input	Original	hgtd3n60a4s hgt1s3n60a4s hgtp3n60a4 150oc +4100khz 3n60a4 hgt1s3n60a4s9a tb334	PDF
3n60a4d Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3N60A4 Contextual Info: 3N60A4DS, 3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	hgt1s3n60a4ds hgtp3n60a4d 150oc ta49327 +4ta49369 3n60a4d hgt1s3n60a4ds9a 3n60a4	PDF
3N60A4 Contextual Info: 3N60A4DS, 3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	hgt1s3n60a4ds hgtp3n60a4d 150oc ta49327 +2ta49369 3n60a4	PDF
3N60A4 Abstract: HGTP3N60A4 HGTD3N60A4S HGTP3N60A4D LD26 TB334 45A-150 Contextual Info: 3N60A4S, 3N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT Features The 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	hgtd3n60a4s hgtp3n60a4 150oc 100khz +6200khz 3n60a4 hgtp3n60a4d ld26 tb334 45a-150	PDF