3N60A4D
Abstract: 3n60a4 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D N-Channel mosfet 400v 25A
Contextual Info: HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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hgt1s3n60a4dshgtp3n60a4d150octa49327+5ta493693n60a4d3n60a4hgt1s3n60a4ds9an-channel mosfet 400v 25a
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3n60a4
Abstract: BH Ra transistor equivalent 3N60A4 3N60A4 equivalent HGTD3N60A4S A9688 ice 265 vqe 24 e HGT1S3N60A4S HGT1S3N60A4S9A
Contextual Info: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 in te r r ii J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT 4825 Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and
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hgtd3n60a4shgt1s3n60a4shgtp3n60a4ta49327+10o-263ab330mm3n60a4bh ratransistor equivalent 3n60a43n60a4 equivalenta9688ice 265vqe 24 ehgt1s3n60a4s9a
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3n60a4
Abstract: 3N60 HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 HGTP3N60A4D TB334
Contextual Info: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input
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hgtd3n60a4shgt1s3n60a4shgtp3n60a4150oc+6100khz3n60a43n60hgt1s3n60a4s9ahgtp3n60a4dtb334
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3n60a4d
Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3n60
Contextual Info: HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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hgt1s3n60a4dshgtp3n60a4d150octa49327+4ta493693n60a4dhgt1s3n60a4ds9a3n60
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-intersilms-012aamo-153aarf1k49090+16rf1k49093rf1k49092itf87056dqtitf87072dk8titf87008dqtrf1k4922365e9 transistortransistor 75307dtransistor 65e8sd mosfet drive datasheet 4468 8 ping40n60rhr15120 equivalent10n120bnd76107dtransistor 76121demerson three phase dc motor driver service note
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3N60A4D
Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688
Contextual Info: HGT1S3N60A4DS, HGTP3N60A4D in t e r r i i J a n u a ry . D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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hgt1s3n60a4dshgtp3n60a4dta49327ta49369+43n60a4dhgt1s3n60a4ds9a5leca9688
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3N60A4
Abstract: HGTD3N60A4S HGTP3N60A4 HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334 transistor equivalent 3N60A4
Contextual Info: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input
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hgtd3n60a4shgt1s3n60a4shgtp3n60a4150oc+6100khz3n60a4hgt1s3n60a4s9ahgtp3n60a4dtb334transistor equivalent 3n60a4
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3N60A4
Abstract: HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 TB334
Contextual Info: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input
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hgtd3n60a4shgt1s3n60a4shgtp3n60a4150oc+4100khz3n60a4hgt1s3n60a4s9atb334
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3n60a4d
Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3N60A4
Contextual Info: HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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hgt1s3n60a4dshgtp3n60a4d150octa49327+4ta493693n60a4dhgt1s3n60a4ds9a3n60a4
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3N60A4
Contextual Info: HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices
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hgt1s3n60a4dshgtp3n60a4d150octa49327+2ta493693n60a4
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3N60A4
Abstract: HGTP3N60A4 HGTD3N60A4S HGTP3N60A4D LD26 TB334 45A-150
Contextual Info: HGTD3N60A4S, HGTP3N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT Features The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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hgtd3n60a4shgtp3n60a4150oc100khz+6200khz3n60a4hgtp3n60a4dld26tb33445a-150
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