3N60 Search Results

3N60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60K Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

3n60 MOSFEt

Abstract: 3N60 TO-22F 3N60L 3N60B f3n60 3N60A PART NO
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: IXTA 3N60P IXTP 3N60P IXTY 3N60P PolarHVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 3N60Z Power MOSFET 3 A, 6 0 0 V N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON 1 The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

TP3N60

Abstract: p3n60 TP3N55 3n60 MOSFEt 3n60 transistor 3N55 mtp3n55 3N60
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N60 M T P 3N 55 M T P 3N 60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TM O S POWER FETs 3 AMPERES rDS on = 2 5 OH M S 550 and 600 VOLTS These TM O S P ow er FETs are designed fo r high vo ltag e , high

3N60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60A Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high

3n60 MOSFEt

Abstract: 3N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 TO-220 „ DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

3N60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60K-MT Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60K-MT is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60K-MK Preliminary Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60K-MK is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

3N60Z

Abstract: 3N60ZG-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60Z Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

3N60P

Abstract: 3N60
Contextual Info: IXTA 3N60P IXTP 3N60P IXTY 3N60P PolarHVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60K Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
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EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

3N60

Contextual Info: Power Management IPS102 IN-PLUG series: IPS102 Critical Mode PFC Controller Low Cost, High Efficiency PRELIMINARY REV. 5 INTRODUCTION FEATURES DESCRIPTION  The IN-PLUG IPS102 is a primary-side switching controller which provides simple yet high performance active power factor correction PFC .

IPS15HI

Abstract: Q817C
Contextual Info: IN-PLUG IPS1 5 H Datasheet – Rev.10 – Hiccup flyback Cont® r oller – Easy Opt o Failsaf e Pr ot ect ion IN-PLUG series: IPS1 5 H Enhanced Off-line Swit cher Wit h Hiccup, Low Cost, High Efficiency, Low Stand-By Power. Fail- Saf e Protection from Optocoupler Failure

Q817C

Abstract: flyback transformer diagram crt
Contextual Info: Synchronizable Flyback Controller IPS1 6 Pr eliminar y Dat asheet Rev. 2 IN-PLUG series Low Cost, High Efficiency, Low Power Synchronizable Flyback Controller IPS1 6 PRELIMINARY DATASHEET REV2 INTRODUCTION DESCRIPTION The IN-PLUG® IPS16 has been designed for low-cost,

2N80

Abstract: 5P30
Contextual Info: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTING*G LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _