2N80 Search Results

480b

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N80 Preliminary Power MOSFET 2A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N80 Preliminary Power MOSFET 2 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N80 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum

Contextual Info: High Voltage MOSFET IXTA 2N80 IXTP 2N80 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated = 800 V = 2 A = 6.2 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

nkt270

Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801
Contextual Info: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385

npn darlington transistor 150 watts

Abstract: 2n6038 2N6039 transistor 2n6038 2N6035 2N8030
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N8030 thru 2N6031 8m 2NS630J Plastic Darlington Com plem entary Silicon Power Transistors PNP 2N 6035 . . . designed for general-purpose amplifier and low-speed switching applications. • • • • • High DC Current Gain —

2N398A

Abstract: Germanium Transistors 2N396 2N965
Contextual Info: GERMANIUM PNP MESA TRANSISTORS VcBO f^Emo Max V Max 2N828A 2N829 2N808 2N960 2N961 15 15 30 15 12 2.5 2.5 2.5 2.5 2.0 2N962 2N962 2N963 2N964 2N964 12 12 12 15 15 1.2 1.3 2.0 2.5 2.5 2N964A 2N965 2N966 2N967 2N968 15 12 12 12 15 2.5 2.0 1.2 2.0 2.5 2N969 2N970

2n2635

Abstract: 2N985 2N461 GERMANIUM SMALL SIGNAL TRANSISTORS 2n4525 2N3449 2N398A 2N427 2N963 2n964
Contextual Info: GERMANIUM PNP MESA TRANSISTORS Type 2N828A 2N829 2N808 2N960 2N961 2N962 2N962 2N963 2N964 2N964 2N964A 2N965 2N966 2N967 2N968 2N969 2N970 2N971 2N972 2N973 2N974 2N975 2N985 2N2635 2N3449 VcBO y Max f^Emo V Max 15 15 30 15 12 12 12 12 15 15 15 12 12 12 15

2n80

Contextual Info: High Voltage MOSFET IXTA 2N80 IXTP 2N80 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated = 800 V = 2 A = 6.2 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

2N80

Abstract: 2N80L-TN3-T 2n802a uc3570
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a

AC122

Abstract: 2S856 OC75N SK3006 oc75 2S8175 2N2613 pnp oc75 2S8135 Low-Power Germanium PNP
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number NKT223 2N1384 2N1384 2N1384 NKT304 2G320 AC116 AC116 2N565 2N566 10 ~~~:~ 2S8171 2S8171 OC75 OC75 2N226 2N414 2N414A UPI1307 15 20 ~~JJg; NKT139 2N805 2N806 2N428 ASY54N 2N2930 2N2541 2S8135 25 30 ~~~1;j502~

Contextual Info: Advanced Technical Information High Voltage MOSFET IXTA 2N80 IXTP 2N80 N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V VGS Continuous ±20

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2.4A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a

1461 smd

Contextual Info: nixYS AdvancedTechnical Information High Voltage MOSFET IXTA 2N80 IXTP 2N80 N-Channel Enhancement Mode Avalanche Energy Rated V* DSS = ^D25 P DS on “ 800 V 2A 5.5 Q — Symbol Test Conditions VDSS Tj =25°Cto150°C 800 V v DGR Tj = 25° C to 150° C; RGS= 1 M£2

2N80

Abstract: 23AA1
Contextual Info: Advanced Technical Information High Voltage MOSFET IXTA 2N80 IXTP 2N80 = 800 V = 2 A = 6.2 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2.4A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a

2a 400v mosfet to-251

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a

7x5 dot matrix led displays

Abstract: arduino uno ASM117 28BYJ-48 mg995 ASM117-3 28BYJ48 4x4 matrix keypad in pic with c code PIC16F877A manual PIC 24C16
Contextual Info: PPIC IC DDevelopment Board Ultra 2 IC + Arduino UNO USER'S GUIDE WIDE.HK page 2 PIC Development Board Ultra 2 Table of content Introduction Connectivity Introduction to PIC . . . . . . . . . . . . . . . . . . . . . . . . . . . .03 PIC sockets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2N8057

Abstract: MX584 MAX584 MAX584J MX584JCSA MX584JH MX584JN MX584KCSA MX584KH MX584KN
Contextual Info: 19-1115; Rev 2; 11/04 Pin-Programmable, Precision Voltage Reference Maxim’s MX584 is a temperature-compensated, bandgap voltage reference which provides pin-programmable output voltages of +10.00V, +7.50V, +5.00V, and +2.50V. External components are not required for these

STC1015E

Abstract: DTS104 ASY82 DTS103 DTS106 DTS108 NKT12
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SC631

Abstract: 2SC632 2SC634 2n7471 A608 transistor pnp 2N7481 ZA-14 FV918 2N625 J3030
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2SA430

Abstract: 987T1 988T1 989T1 2SA316 OC304 2SA315 transistor 2N222 2SA314 2SA348
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor b1154

Abstract: B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

GT123

Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

LP 8029 l2

Abstract: 3M1298 EE16 148
Contextual Info: IS31LT3932 Bulb Lighting Evaluation Board Guide • Description LED PAR IS31LT3932 is a universal LED driver, which can operate in fly-back, buck-boost and buck convertor. For isolation Quick Start fly-back, it can achieve high PF, high current accuracy, ± 5 %