2N565 Search Results

2n5657

Contextual Info: 2N5655, 2N5657 Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays. http://onsemi.com 0.5 AMPERE POWER TRANSISTORS

A 3131 IC

Abstract: 2n5651
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. TYPE: 2N5651 3131 S. E. JAY STREET, STUART, FL 34997 PH: 772 283-4500 FAX: (772)286-8914 Website: http://www.semi-tech-inc.com Email: data1@semi-tech-inc.com CASE OUTLINE: TO-72 NPN SILICON TRANSISTOR

2N5655

Abstract: 2N5656 2N5657
Contextual Info: MOTOROLA Order this document by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

Contextual Info: SGS-THOMSON 3 2 N 5657 IMDeiRi i[LiCTI ®[i!lDS$ SILICON NPN TR A N SISTO R . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current,

Contextual Info: 1EE D Jfl3bbDll ODGEOfll fi | T-3^-0^ 2N5659 10 AMP HIGH SPEED NPN TRANSISTOR 120 VOLTS CASE STYLE Z JEDECTO—111 ALL TERMINALS ISOLATED FROM CASE *• » . •«.4*00 -7 CJ ,570 ^ .a». • .4bt» - J20 .436 .42! t.« S \ C O LLE C T O R r*.215 •.135

2N5653

Abstract: 2N5654
Contextual Info: 2N5654 2N5653 s »channel JFETs designed for S ilic o n ix . Performance Curves NC See Section 5 • Analog Switches ■ Commutators ■ Choppers B E N E F IT S • Low Cost • Automatic Insertion Package • High Speed tQisi + t Q F F = 24 ns Max 2N5653

transistor AC 307

Abstract: 2N5657
Contextual Info: 2N5657  SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays.

B316J

Abstract: 2N6188 EB-500 1N5802 2N5006 2N5007 2N5009 2N5659 2N6189 TWX910-583-4807
Contextual Info: SOLI» STATE DEVICES INC 1EE D Jfl3bbDll ODGEOfll fi | T 2N5659 10 AMP HIGH SPEED NPN TRANSISTOR 120 VOLTS CASE STYLE Z JEDECTO—111 ALL TERMINALS ISOLATED FROM CASE *•» . •«.400 * -7C J ,570 ^ .436 .42! .4üB J20 .a» . 000 ,090 t.« S \ *.215 •.135

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

2N5655

Abstract: 2N5657
Contextual Info: ON Semiconductort 2N5655 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS

Contextual Info: 2N5655, 2N5657 Plastic NPN Silicon High−Voltage Power Transistor These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS NPN SILICON

Contextual Info: 2N5651-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)27 I(C) Max. (A)50m Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2N5659

Contextual Info: SOLITRON DEVICES INC MAE D flBtflbDB 00037bt DST 7^33- ISO ]> S o l i t r O i l Devices, Inc. S P E C I F I C A T I O N S M A X IM U M R A T IN G S Voltage, Collector to Base V CB0 NO.: 2N5659 T Y PE: mpn SI L I C O N C A SE : T O -m /I 120 . Voltage, Collector to Emitter ( V CEO)

Contextual Info: SEMELAB LTD 37E T> | fil33167 0000D23 3 1 TVpe No. Reliability Polarity Option 2N5656 2N5657 2N5663 2N5664 2N5665 SCREEN HI-REL HI-REL NPN NPN NPN NPN NPN 2N5666 2N5667 2N5671 2N56722N5675 HI-REL HI-REL CECC CECC HI-REL NPN NPN NPN NPN PNP 2N5676 2N5679 2N5680

Contextual Info: 2N5655G, 2N5657G Plastic NPN Silicon High-Voltage Power Transistors These devices are designed for use in line−operated equipment such as audio output amplifiers; low−current, high−voltage converters; and AC line relays. http://onsemi.com 0.5 AMPERE

BUX98PI

Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490

n5655

Abstract: N5657 2N5655 2N5656
Contextual Info: MOTOROLA Order this document by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2 N 56 55 2 N 5 6 56 2 N 5657 Plastic NPN Silicon H igh-V oltage Power Transistor . . . designed for use in line-operated equipm ent such as audio output amplifiers; low -current, high-voltage converters; and AC line relays.

Contextual Info: 2N5652-509 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)27 I(C) Max. (A)50m Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

JE370

Abstract: je243 je712 je240 je200 je253 JE703 JE350 je250 JE720
Contextual Info: Power Transistors TO-126 Case T o p View T Y P E NO. NPN PNP 2N4921 2N4918 2N4922 2N4919 2N4923 2N4920 2N5190 2N5193 2N5191 2N5194 2N5192 2N5195 2N5655 2N5656 2N5657 2N6037 2N6034 2N6038 2N6035 2N6039 2N6036 BD135 BD136 BD137 BD138 BD139 BD140 BD175 BD176

Contextual Info: SOLITRON DEVICES INC MûE ]> • ABbflbDE GGG37bb DST WËSOD SolitrOfl Devices, Inc. S P E C I F I C A T I O N S NO.: 2N5659 T Y PE: npn SI L IC O N 120 Voltage, Collector to Base VCB0 Voltage, Collector to Emitter (V CE0) Voltage, Emitter to Base (V EB0)

2n4305

Contextual Info: GENERAL TS SEMICONDUCTOR 3918590 GENERAL SEMICONDUCTOR , l^r . General Semiconductor i^L Industries, Ine . DÉ”! BTlñSTO 0GDIT34 3 T2C 01934 O 7 ^ 3 3 ^ 5 1 - NPN TRANSISTOR CHIP S q U H R E I] CQMPRNY “27” Typical Device Types: 2N4305, 2N5002, 2N5658, 2N5665, 2N5667

2N3920

Abstract: TO61 2N5330 2N5542 2N2812 2N3919 2N5049 2N5083 2N5084 2N5313
Contextual Info: 8134693 S E M ICOA 40 dF | G00D1E7 S NPN SILIC O N POW ER T R A N SIS T O R S C o n t’d M axim um R a tin gs D e vic e Typ e N o . NPN 2N5049 2N3919 2N3920 2N5083 2N5084 2N2.811 2N2812 2H5317 2N5313 2N5552 2N561C 2N5085 2N5329 2K5659 2R2813 2N2814 2N5658

to126 case

Abstract: BD139 BD136
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

2N5657

Contextual Info: 2N5657 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays.