2N2814 Search Results

2N3017

Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984

2N2814

Contextual Info: ISCFdÈ,$6¶,$6¶ text/html About News keyword search: Employment Site Home part number search: 2N2814 #23003 RFQ/Sample Package TO-61(STD) NPN Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Maximum Electrical Rating

472 M

Abstract: MIL-S-19500 2N3055 JANTX
Contextual Info: Summary List of API Q.P.L. Directory Types 2N2812 - JAN, JAN-TX, JAN-TXV 2N2814 - JAN, JAN-TX, JAN-TXV M IL-S-19500/415 MIL-S-19500/415 2N2880 - JAN. JAN-TX, JAN-TXV 2N3749 - JAN. JAN-TX, JAN-TXV M IL-S-19500/315 MIL-S-19500/315 2N3055 - JAN. JAN-TX, JAN-TXV

2N2880

Abstract: 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749
Contextual Info: Device Type 2N2658 2N2658 2N2814 2N2880 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N5004 2N5005 2N5038 2N5074 2N5153 2N5539 2N5672 2N6307 SDT3229 SDT55907 SDT55907 Control Drawing 5203/02505B 5203/02506B 5203/031B 5203/02503B 5203/02501B 5203/02502B 5203/00301B

2N3920

Abstract: TO61 2N5330 2N5542 2N2812 2N3919 2N5049 2N5083 2N5084 2N5313
Contextual Info: 8134693 S E M ICOA 40 dF | G00D1E7 S NPN SILIC O N POW ER T R A N SIS T O R S C o n t’d M axim um R a tin gs D e vic e Typ e N o . NPN 2N5049 2N3919 2N3920 2N5083 2N5084 2N2.811 2N2812 2H5317 2N5313 2N5552 2N561C 2N5085 2N5329 2K5659 2R2813 2N2814 2N5658

on 5295 transistor

Abstract: on 5295 equivalents JANTX2N28 2N2812 2N2814 JAN2N2812 JAN2N2814 transistors substitute JANTX2N2814
Contextual Info: MIL SPECS ï c | 0000125 OOOBSOb T | ~ MIL-S-195Ü0/415 USAF NOTICE 1 9 September 1986 NOTICE I [OF VALIDATION! MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N2812, AND 2N2814 JAN, AND JANTX MIL-S-19500/415(USAF) Amendment 2, dated 18 April 1973, has been reviewed and

mil-s-19500

Abstract: 2N2814
Contextual Info: S U M M A R Y LIST O F API Q .P.L. DIRECTORY TYPES 2 2N2812 - JAN, JAN-TX, JA N -T X V .MIL-S-19500/415 2N2814 - JAN, JAN-TX, JA N -T X V .MIL-S-19500/415

Contextual Info: r le = 10 AMPS DEVICE TYPE VOLTS PD @ 100°C WATTS hFE@ lc Min. Max. AMPS PACKAGE 2N2811 2N2812 2N2813 2N2814 TO-61 TO-61 TO-61 TO-61 80 80 120 120 8.0 8.0 8.0 8.0 40.0 40.0 40.0 40.0 2040 20 40 - 60 120 60 120 2N4070 2N4071 2N4301 2N5218 2N5288 2N5289 100

SDT13305

Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251

10J2

Abstract: 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813
Contextual Info: NEW ENGLAND SEMICOND UCT OR INIPIM T O - 6 1 PNP Comple­ ment VCEO SUS (V) 0000053 [ See page 13 for isolated collector versions Case 805 Type No. S^E D VCE (SAT) @ IC/lB ( V @ A/A) VBE @ IC/VCE (V @ Art) VBE (SAT) @ IC/lB STÛ • NES I(max) = 5 to 2 0 A

2N1724

Abstract: 2N3624
Contextual Info: 8440355 SPACE POWER ELECTRONICS "'"""SPACE POWER ELECTRONICS 89C flT 00107 D 7 J 5 . E DF| 6440355 DDD01D7 Hi-Rel PLANAR P O W E R - 1 0 AMP WH TO-66 40W@T =100°C TO-5 5W@T =100°C o P TO-3 80W@T =100°C *A11 leads e l e c t r i c a l l y i s o l a t e d from case

2N1724A

Abstract: TO61 2N3442 2N1724 2N1725 2N3773 2N3878 2N3879 2N3446 2N5326
Contextual Info: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

IC 4025

Abstract: 2N1724A 2N1724 sf 1012 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487
Contextual Info: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 5TÛ * N E S NPN TO-61 I max = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz See page 13 for isolated collector versions [ Type No. 2N1724 2N1724A 2N1725 2N2811 PNP Comple­ ment VCE (SAT) @ IC/lB

044H11

Abstract: KT808B 044H10 kt808BM BJG 36 kt808 2s021 B0313 2n1810
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 SOT7S09 SOT7S09 2N3714 B0245B B0245B B0245B B0313 2S041 ~~~g~ 25 30 ST28143 2SC1115 2SC1115 OTL3203 SOT3207 SOT3207 SOT3207 2N500S ~~~~n 35 40 2N5S24 2N5730 2N4301 2NS128 BOY91 BOS11 GSDB10008 SOT701S

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

2N1724

Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
Contextual Info: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

TO61 package

Abstract: 2N1724A 2N5540 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 VcEO Ic ^FE@ IC/ ^CE fr MHz l@2/.2 50 10 30-90@2/15 ,6@2/.2 50 10 5 50-150@2/15 l@2/.2 50 10 50 10 20-60@5/5 .5 @5/. 5 40 15 2N2812 50 10 40-120@5/5 ,5 @ 5/.5 40 15 2N2813 70 10 20-60@5/5 , 5 @ 5/.5

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

PG2335

Abstract: TO61 PG2349 PG2350 2N2811 2N2812 2N2813 2N2814 PG1335 PG1336
Contextual Info: P I ELECTRONICS INC ^3 DE ! □ □ L>3 5 Ì 5 □ □ □ D D i a 0 | ‘^ 3 ^ o 7 • Linear hFE from 50 mA to 10 amps • Low saturation voltage at maximum collector current • High frequency ft = 60 MHz typical • High voltage, BVCeo(.«.i to 100 volts

ic SL 1626

Abstract: 100C 2N2812 2N2814
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 January 2004. MIL-PRF-19500/415A 31 October 2003 SUPERSEDING MIL-S-19500/415 USAF 10 July 1969 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

2N3919c

Abstract: 2N3445
Contextual Info: COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No C ase 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 TO-66 TO 1 U /I TO111/1 TO lii A TO111/1 2N5346 2N5348 2N5349 VCBO Volts V cEO «“ s Volts VEBO Volts Min Max VCE ic Vc e (sat) Vb e (sat) 1b •QjC "C/W ft