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    2N5539 Search Results

    2N5539 Datasheets (29)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N5539
    API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan PDF 213.7KB 2
    2N5539
    API Electronics Short form transistor data Short Form PDF 62.32KB 1
    2N5539
    API Electronics Short form transistor data Short Form PDF 63.36KB 1
    2N5539
    Diode Transistor Transistor Short Form Data Scan PDF 79.08KB 1
    2N5539
    Diode Transistor Silicon Transistors Scan PDF 51.27KB 1
    2N5539
    Diode Transistor Silicon Transistors / TO-63 Transistors Scan PDF 78.56KB 1
    2N5539
    Diode Transistor Silicon Transistors Scan PDF 51.78KB 1
    2N5539
    General Transistor NPN Power Transistors Scan PDF 188KB 2
    2N5539
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 43.04KB 1
    2N5539
    Unknown Transistor Replacements Scan PDF 84.9KB 1
    2N5539
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 115.12KB 1
    2N5539
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.89KB 1
    2N5539
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 92.72KB 1
    2N5539
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.87KB 1
    2N5539
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 85.03KB 1
    2N5539
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 53.5KB 1
    2N5539
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 160.58KB 1
    2N5539
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 162.87KB 1
    2N5539
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 134.28KB 1
    2N5539
    Unknown Transistor Replacements Scan PDF 76.45KB 1
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    2N5539 Price and Stock

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    Microchip Technology Inc 2N5539

    Transistor BJT NPN 130V 20A TO-63 - Bulk (Alt: 2N5539)
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    Avnet Americas 2N5539 Bulk 50 Weeks 100
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    Newark 2N5539 Bulk 500
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    Microchip Technology Inc 2N5539 50 Weeks
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    • 100 $572.57
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    Onlinecomponents.com 2N5539
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    • 1000 $518.37
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    Master Electronics 2N5539
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    • 100 $518.37
    • 1000 $518.37
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    Bristol Electronics S2N5539-5 2
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    2N5539 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N4211

    Abstract: to63 2N3597 2N3598 2N3599 2N4210 2N5329 2N5539 2N5731 2N5732
    Contextual Info: Device Type 2N3597 2N3598 2N3599 2N4210 2N4211 2N5329 2N5539 2N5731 2N5732 2N5957 2N5959 2N6046 2N6047 2N6048 SDT3201 SDT3202 SDT3203 SDT3204 SDT8002 SDT8003 SDT8012 SDT8013 SDT8015 SDT8016 SDT8045 SDT8070 SDT8071 SDT8751 SDT8753 SDT8754 SDT8755 SDT8756 SDT8757


    Original
    2n35972n35982n35992n4210+72n42112n53292n55392n57312n57322n5957to63 PDF

    2N2880

    Abstract: 2N5004 2N3055S 2N5672 TO111 2N2658 2N2814 2N3599 2N3741 2N3749
    Contextual Info: Device Type 2N2658 2N2658 2N2814 2N2880 2N2880 2M2880 2N3055S 2N3599 2N3741 2N3749 2N5004 2N5005 2N5038 2N5074 2N5153 2N5539 2N5672 2N6307 SDT3229 SDT55907 SDT55907 Control Drawing 5203/02505B 5203/02506B 5203/031B 5203/02503B 5203/02501B 5203/02502B 5203/00301B


    Original
    2n26582n28142n28802m2880+72n3055s2n35992n37412n37492n50042n5672to111 PDF

    2N5672 solitron

    Abstract: TU105-B01 2N5004 SDT55907 2N3658 TU201 TU108-B01 TU206-B01
    Contextual Info: SOLITRON DEVICES INC K ¿eÆ liÊron _ r a Q i g H U ? © M M , ! Devices. Inc. DEVICE TYPE ito S P A C E FLIGHT PO W ER TRAIMSISTORS CONTROL DRAWING VCBO VOLTS VCEO VOLTS 2N5038 2N5074 2N5153 2N5539 2N5672 5203/009-01B 4203/022-01B


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    27fls2n50382n50742n5153+122n55392n56722n6307sdt3229sdt559072n5672 solitrontu105-b012n50042n3658tu201tu108-b01tu206-b01 PDF

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


    OCR Scan
    0-300v2n19362n19372n3265+112n32662n52502n52512n54892n55872n558b2n3s492n38462n38472n38482n4002 PDF

    TO63 package

    Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
    Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3


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    2n32652n32662n38462n3847+102n40022n40032n55392n60462n60472n6048to63 package2n5250transistor 1142n3150 PDF

    2N5251

    Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
    Contextual Info: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20


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    000g052n19362n19372n3265+112n32661o05w1o2n52502n52512n54892n55872n38462n38472n38492n4002to114 PDF

    to63

    Contextual Info: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825


    Original
    b440355s4h03ssd00d11e2n3265+72n32662n35972n35982n35992n38462n3847to63 PDF

    2N5385

    Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
    Contextual Info: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO


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    fls5402a2n5348o-1112n5349+82n53842n53852nxxxx2n54802n56722n5675to114 package2n5388 PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan
    27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175 PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan
    an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492 PDF

    Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


    OCR Scan
    2n30552n32352n32362n3238+42n32392n32402n36672n5412 PDF

    Solitron Devices

    Contextual Info: 8368602 SOLITRON DEVICES ^ t o ^ì l © INC _ 95D 0 2 8 6 5 D T, - 3 3 - / 3 ^ DT|fl3b0bOE OODEûbS b W ~ © _ _ Devices, Inc. MEDIUM VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POW ER TRAN SISTOR* * FORMERLY 86


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    305mlablesolitron devices PDF

    2N3055

    Abstract: 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882
    Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


    OCR Scan
    2n30552n32352n32362n3238+62n32392n32402n36672n54122n58812n5882 PDF

    TO63

    Abstract: 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
    Contextual Info: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629


    OCR Scan
    f\15i5tdr2n3773n5629n5630+92n56312n62592n63592n3237n35972n3598to632n35992n3772 PDF

    Jan2N3055

    Contextual Info: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO sus Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO-3 TO-3 100 100


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    2n30552n32352n32362n3238+52n32392n32402n36672n5412jan2n3055 PDF

    2N5314

    Abstract: 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
    Contextual Info: A P I EL ECT RONI CS 00^3592 A P I I NC 2b ELECTRONICS d F | d D 4 3 S cIS □□□Q E3S INC 26C & l~ °~ T :- '3 3 - 0 { 00235 COLLECTOR CURRENT = 20 AMPS NPN TYPES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772 JAN


    OCR Scan
    0ch35922n19362n19372n2815+72n28162n28172n28182n32372n35972n35982n5314 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680 PDF

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


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    germanium transistor2n51212n54182n5539+32n5637v2205mm8006 PDF

    2N3597

    Abstract: 2N3599 2N5539 BDY58 SDT8301 SDT8304 SDT8758 74c74 TRANSISTOR TO63
    Contextual Info: -Ælttron A T T Ä L ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc. NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 86 CHIP N UM BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan
    305mm2n35972n35992n5539+6bdy58sdt8301sdt8304sdt875874c74transistor to63 PDF

    jan2n6251

    Contextual Info: Memsemi NPN Transistors Part Number NPN JANTXV2N6249 2N6250 JAN2N6250 JANS2N6250 JANTX2N6250 JANTXV2N6250 2N6674 2N6689 2N6251 JAN2N6251 JANS2N6251 JANTX2N6251 JANTXV2N6251 2N6675 2N6690 2N6546 2N6676 2N6691 JAN2N6546 JANTX2N6546 JANTXV2N6546 2N6677 2N6692


    OCR Scan
    npn-20jan2n6251 PDF

    2N1936

    Abstract: 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
    Contextual Info: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772


    OCR Scan
    dd43scisd-7i33loi2n19362n1937+72n28152n28162n28172n28182n32372n35972n3598 PDF

    4010 IC

    Abstract: 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266
    Contextual Info: NEU ENGLAND SEMICONDU CTOR b S b M ' m D000GS7 m 3 SRE D «NES Ic max — 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fT = 0.6 to 3 0 MHz NPN TÜ-63 Case 807 V ce (sat ) @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (V @A/A) VBE @ IC/VCE (V @ A/V) pd @ TC = 100 °C (Watts)


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    0000g572n19362n19372n3265+13102cv22n3266602w22n49502n5250507qt74010 ic2n60622n5927ic 40102n486650110to-114 PDF

    2N5539

    Contextual Info: m m lC fO 2 140 C o m m e rc e Drive t f f l M o n tg o m ery vilfe, PA S G Tei; {215 8 3 1-3 840 18936- ." * * , ' 1 ' : ^ 2 N5590/2N5591 RF & MICROWAVE TRANSISTORS 130.,230MHz FM MOBILE APPLICATIONS • FREQUENCY 175WH:-: » VO LTAfif. i.TSV « POW ER OUT


    OCR Scan
    n5590/2n5591230mhz2n55902n5589/2n5590/2n5591+12n5539 PDF

    terminals of 2n3055

    Abstract: 2n3055 2N4211 2N3238 2N3239 TO111 package 2N3667 2N3236 2N3240 2N5882
    Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100


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    2n30552n32352n32362n3238+82n32392n32402n36672n5412terminals of 2n30552n4211to111 package2n5882 PDF