2N5202 Search Results

k 3878

Abstract: 2N3879 2N650A 2n5202 2N3879A
Contextual Info: P o w e r Tran sistors File Num ber 766 2N3878, 2N3879, 2N5202, 2N6500 HARRIS SEMICOND SECTOR 27E D • 4302E71 OOnflBl 0 * H A S ~ r - 3 3 - i / High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors F o r H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s

2N1724A

Abstract: TO61 2N3442 2N1724 2N1725 2N3773 2N3878 2N3879 2N3446 2N5326
Contextual Info: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE

2n3878

Abstract: TA7285 2N3879 2N5202
Contextual Info: File N u m b e r 2N3878, 2N3879, 2N5202 766.1 High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors For H ig h -S p ee d S w itchin g and L in ea r-A m p lifie r A p p licatio n s Features: • ■ ■ M a x im u m -a re a -o f-o p e ra tio n c u rv e s l o r d c a n d p u ls e o p e r a tio n

ta8932

Abstract: 2N3879 TA7285 P602I 2N5202 2N3878 2N6500 2N3679 RCA Solid State Power Transistor PT3535
Contextual Info: "üï »F|3fl7SGfll D0171QS 7 01E 17105 171Q_ _01E D High-Speed Power l 1u ° u 7^_ L— 3875081 G E SOLID STATE 2N3878, 2N3879, 2N5202, 2N6500 File N u m b e r

transistors 1U

Abstract: 2N3879 2N3878
Contextual Info: 01 » E ^ 3 f l ? S D a i 0017105 " 0 1 E 171Q5 _ 0 1E 1 7 11u0 5 High-Speed Power Transistors-— D 3875081 G E SOLID 7 STATE 2N3878, 2N3879, 2N5202, 2N6500 D u Tz. L — U File Number

2N3919c

Abstract: 2N3445
Contextual Info: COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No C ase 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 TO-66 TO 1 U /I TO111/1 TO lii A TO111/1 2N5346 2N5348 2N5349 VCBO Volts V cEO «“ s Volts VEBO Volts Min Max VCE ic Vc e (sat) Vb e (sat) 1b •QjC "C/W ft

2n3879

Abstract: 2n5202 101075A 2N3679 P602I TA7285 rdf1
Contextual Info: File Number 766.1 2N3878, 2N3879, 2N5202 HARRIS S E m C O N D SECTOR ShE D M302E71 QQMDMMl 147 • HAS ■ High-Speed, Epitaxial-Collector Silicon N-P-N Planar Transistors For High-Speed Switching and Linear-Amplifier Applications Features: ■ M axim um -area-of-operatlon curves fo r d c and pulse operation

2N5239

Abstract: 2N5157 2N5202 2N5218 2N5237 2N5238 2N5240 2N5241 2N5250 2N5251
Contextual Info: • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN hf: E V OLTAGE S NPN SAT . V O LT A GES M 3X. CASE V CE VCE V CB V EB •c (V) (A) M in. Max. (A) •b (A) V CE (V) V BE (V) 2N5157 TO-3 700 500 6 5 1 30 90 1 0.7 2.5 2 2N5202 TO-66 100 50

VCAQ

Contextual Info: na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 378-2802 (212) 227-6006 FAX: (979)378-8880 2N5202 High-Speed, Silicon N-P-N MAXIMUM RATINGS, Absolute-Maximum Values: •COLLECTOR-TO-BASE VOLTAGE COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE;

2N2814 JAN

Abstract: 2n3442 2N1724A 2N2812 TO61 2N1724 2N1725 2N3773 2N3878 2N3879
Contextual Info: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE

2N3919c

Contextual Info: _ 14 EmI M I E L E C T R O N I C S , IN C . COLLECTOR CURRENT = D evice No C ase 2N3878 2N3879 2N5202 2N5326 T O -66 T O -66 T O -66 TOU l/I TO111/1 TO111/1 TO111/1 2N5346 2N5348 2NS349 v CBO Volt8 v CEO <8U8 V olts VEBO Volts Min Max VC E 200 100 100 150

Contextual Info: 2N5202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)75ã V(BR)CBO (V)100 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: _14 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE

Contextual Info: 14 u u u iiELEC TR O N IC S, INC. COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No 2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2N5349 VCBO VcEO sus Case Volts Volts 50 TO-66 120 75 TO-88 120 SO TO-68 100 80 100 TO111/1 80 TO100 111/1 100 100 TO111/1 100 100

Contextual Info: 0043592 A P I A P I ELECTRONICS INC 26C 00227 ELECTRONICS INC 2b D «7*^ 1 D eT| □□43512 0000SS7 1 | COLLECTOR CURRENT = 5 AMPS PNP TYPES - CONTINUED Device No AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088 AP1102 AP1103 AP1121 AP1135

Ultrasonic amplifier 50w

Abstract: 2n377 2n3773 power Amplifier BDY29 BDY37 2N1482 2N3054 2N344 2N5298 2N5786
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: 4 AMP NPN Sorted by IC, then VCEO Ratings based on 25˚C case temperature unless otherwise specified PT max IC max A VCEO max (V) hFE min hFE max @Ic (A) VCE(sat) max (V) @ IC (A) fT min (MHz) 2N5296 4 40 30 120 Note 1 1 Note 1 Note 1 36 TO-257 2N6121 4

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

BD149

Abstract: 2N6297 Motorola LM3661TL-1.40 2SD526-0 2SB5960 Motorola 2N6297 MJE2481 MJE2483 2SD5260 idb596
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V PD (BR)CEO Max hFE »T Of) ON) Mln (Hz) ICBO t0N r Max Max (A) (8) Max (Ohms) (CE)sat Tp.r Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . -5 -10 . -15 .20 . .25

2N6178

Abstract: 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

2N6180

Abstract: 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 M H z . . . I r to 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A M X . P j « 7 W m ax . (T O -» ) • 30 x 30* 3 0x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037

Contextual Info: Ic = 3.0 AMPS DEVICE TYPE PACKAGE 2N1647 2N1648 2N1649 2N1650 T O -111 TO-111 TO-111 TO-111 80 80 80 80 80 120 80 120 6.0 6.0 6.0 6.0 20.0 20.0 20.0 20.0 15 15 30 30 - 45 45 90 90 0.5 0.5 0.5 0.5 10.0 10.0 10.0 10.0 1.2 1.2 1.2 1.2 1.0 1.0 1.0 1.0 0.1 0.1