2N6036 Search Results

2N6034G

Abstract: 2N6039 2N6036G 1N5825 2N6034 2N6035 2N6036 2N6038 MSD6100
Contextual Info: PNP 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6036 Features • • • This device is designed for general purpose amplifier and low-speed switching applications.

sc 6038

Abstract: N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037
Contextual Info: MOTOROLA •SC XSTRS/R F 15E D I t3b75SM OOflMSflO Ì | T~33 ü j 2N602Ô thru MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and low-speed switching

Contextual Info: 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6034, 2N6037 series devices are complementary silicon Darlington power transistors, manufactured by the epitaxial base

2N6038

Abstract: 2N6034G 2n6038g 2N6036G 2N6034 1N5825 2N6035 2N6036 2N6039 MSD6100
Contextual Info: PNP 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching

2N6039

Abstract: 2N6036 2n60 5064 DIODE
Contextual Info: 2N6036 2N6039 Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 ■ Linear and switching industrial equipment

2N6036

Abstract: 2N6039
Contextual Info: 2N6036 2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ 2N6036 IS A STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIER

K800

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6036 Features • This device is designed for general purpose amplifier and low-speed switching applications. PNP Darlington Power Transistor

ic 7490

Abstract: 2N60 transistor Ic 7490 circuit 2N6034 PNP 2N60 2N60 2N6037 2N6039 7490 ic 2N6035
Contextual Info: # NPN PNP 2N60342N6037 2N60352N6038 2N60362N6039 @ PLASTIC DAR LINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. o High DC Current hFE = 2000 o Gain– Typ Collector-Emitter

Contextual Info: MCC TM Micro Commercial Components Features • • • • • •
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6036 Halogen free available upon request by adding suffix "-HF" This device is designed for general purpose amplifier and low-speed

Contextual Info: 2N6036 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)1.5’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.750

Contextual Info: SGS-THOMSON [¡«æ iH iera *! 2N6035/2N6036 2N6038/2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6036 AND 2N6039 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N6038 and 2N6039 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in

2N6036

Abstract: 2N6039 NPN VCBO 80V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector–Emitter Sustaining Voltage: VCEO SUS = 80V(Min) ·High DC Current Gain: hFE = 750(Min)@IC= 2A ·Complement to Type 2N6036 APPLICATIONS ·Designed for general purpose switching and amplifier

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6036 Features • • • • • This device is designed for general purpose amplifier and low-speed switching applications.

2N6034

Abstract: 2N6036 2N6035 6038
Contextual Info: SavantIC Semiconductor Product Specification 2N6034 2N6035 2N6036 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N6037/6038/6039 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier

2N6038

Abstract: to225a 2N6034 2N6034G 2N6038G 2N6039 2N6035G 2N6036G to225aa 2N6035
Contextual Info: PNP 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features

2n6039

Abstract: 2N6036
Contextual Info: SGS-THOMSON 2N6036 2N6039 Œfî D^Q K ô |[LI©fl©RflB(Si COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • 2N6036 IS A SGS-THOMSON PREFERRED SALESTYPE ■ COMPLEMENTARY PNP - NPN DEVICES ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS

Contextual Info: Darlington Power Transistors Part No. 2N6037 2N6038 2N6039 2N6034 2N6036 TIP100 TIP110 TIP120 TIP130 TIP101 TIP111 TIP121 TIP131 TIP102 TIP112 TIP122 TIP132 TIP105 TIP115 TIP125 TIP106 TIP116 TIP126 TIP107 TIP117 TIP127 Polarity NPN PNP NPN PNP VCEO IC Bipolar Transistors

BUX98PI

Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490

Contextual Info: 2N6036 2N6039 Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode s t ro Applications ■ eP Linear and switching industrial equipment

JE370

Abstract: je243 je712 je240 je200 je253 JE703 JE350 je250 JE720
Contextual Info: Power Transistors TO-126 Case T o p View T Y P E NO. NPN PNP 2N4921 2N4918 2N4922 2N4919 2N4923 2N4920 2N5190 2N5193 2N5191 2N5194 2N5192 2N5195 2N5655 2N5656 2N5657 2N6037 2N6034 2N6038 2N6035 2N6039 2N6036 BD135 BD136 BD137 BD138 BD139 BD140 BD175 BD176

2N6035 2N6036 2N6038 2N6039

Abstract: 1N5825 2N6035 2N6036 2N6038 2N6039 MSD6100
Contextual Info: ON Semiconductor PNP 2N6035 Plastic Darlington Complementary Silicon Power Transistors 2N6036* NPN 2N6038 . . . designed for general–purpose amplifier and low–speed switching applications. 2N6039 * • High DC Current Gain — hFE = 2000 Typ) @ IC = 2.0 Adc

2N6039

Abstract: simulink matlab rectifier 2N6036 2N6039 SGS 833 pnp
Contextual Info: 2N6036 2N6039 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ 2N6036 IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIER

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N6036 Features • • • This device is designed for general purpose amplifier and low-speed switching applications.