TIP115 Search Results

MJE224

Abstract: tip111g TIP11X
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • •

TIP NPN

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 tip 115
Contextual Info: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L U N MIN MAX 16.51

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP110 TIP111 TIP112 NPN TIP115 TIP116 TIP117 PNP TO-220 Plastic Package Intended for use in Medium Power Linear and Switching Applications

transistor TIP 42

Abstract: TIP 42 transistor Tl 5153 transistor tip 3055 transistor tip 5530 B0738 TIP 122 transistor TIP110 TIP111 TIP 3055 transistor
Contextual Info: TYPES TIP115, TIP116, TIP117 P-N-P DARLINGTON-CONNECTED SILICON POW ER TR A N SISTO R S D ESIG NED IFOR C O M P L E M E N T A R Y USE W ITH T IP 1 10, T IP 1 11, T IP 112 • High SOA Capability, 40 V and 1.25 A 50 W at 25°C Case Temperature Min hpE of 500 at 4 V , 2 A

Contextual Info: MCC TM Micro Commercial Components TIP110/111/112
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Silicon NPN TO-220 package The complementary PNP types are the TIP115/116/117 respectively

Contextual Info: MCC TM Micro Commercial Components TIP110/111/112
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Silicon NPN The complementary PNP types are the TIP115/116/117 respectively

Contextual Info: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP110, TIP111 and TIP112 T 0 -2 2 0 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature

darlington power transistor

Abstract: TIP110/111/112 TIP110-D transistor 400 volts.50 amperes 1N5825 MSD6100 TIP110 TIP111 TIP112 TIP115
Contextual Info: ON Semiconductort NPN Plastic Medium-Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general–purpose amplifier and low–speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ @ IC

TIP115

Abstract: TIP-115 TIP116 TIP117 transistors pnp
Contextual Info: Darlington Power Transistors PNP TIP115/116/117 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:

TIP11

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
Contextual Info: IRAN SYS TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS m C TR O M C S LIMITED T0-220 PACKAGE TOP VIEW • Designed for Complementary Use with TIP110, TIP111 and TIP112 B C • 50 W at 25°C Case Temperature C C • 4 A Continuous Collector Current

Contextual Info: File Number TIP115, TIP116, TIP117 1387 HARRIS SEIHCOND SECTOR 5bE D 43 02 57 1 D 0 4 C H 2 b 445 « H A S 2-Ampere P-N-P Darlington Power Transistors 7 * 3 3 -3 TERMINAL DESIGNATIONS For Low and Medium Frequency Power Switching, Hammer Driver, Audio Amplifier, and

TIP110

Abstract: TIP112 TIP115 TIP117 BE26
Contextual Info: TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE =1000 @ V ce = 4V, I c =1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Com plem ent to TIP115/116/117

transistor c 1971

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 C 1971 transistor transistor 1971
Contextual Info: TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● DECEMBER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP115, TIP116 and TIP117 TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature

TIP110

Abstract: TIP111 TIP112 TIP115 TIP116 TIP117
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PLASTIC POWER TRANSISTORS TIP110 TIP111 TIP112 NPN TIP115 TIP116 TIP117 PNP TO-220 Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC

10 amp npn darlington power transistors

Abstract: transistor 600 volts.50 amperes 100 amp npn darlington power transistors transistor 400 volts.50 amperes driver transistor hfe 60 TIP110/111/112 TO-220 Darlington npn to-220 NPN 200 VOLTS POWER TRANSISTOR npn darlington transistor 150 watts
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general-purpose amplifier and low-speed switching applications.

philips TIP117

Abstract: tip110 st TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
Contextual Info: TIP115 TIP116 TIP117 PHILIPS INTERN A T I O N A L 5bE ]> • 7110Û5L 004355b SILICON DARLINGTON POWER TRANSISTORS 742 ■ PHIN T-33- 3 I P-N-P epitaxial-base transistors in monolithic Darlington circuit fo r audio output stages and general purpose am plifier and switching applications. T O -2 2 0 A B plastic envelope. N-P-N complements are

Contextual Info: MCC TM Micro Commercial Components TIP115 TIP116 TIP117
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High DC Current Gain : h • • • • • FE=1000 @ VCE=4.0V, IC=1.0A Min.

Contextual Info: TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP115, TIP116 and TIP117 TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current B 1 ● Minimum hFE of 500 at 4V, 2 A C

Contextual Info: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP110, TIP111 and TIP112 TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current B 1 ● Minimum hFE of 500 at 4V, 2 A C

Contextual Info: Si SGS-THOMSON HDoœiiLKerasiiüiDes TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem entary to T IP 1 10/111/112

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hfE=1000 @ V ce= 4V, lc = 1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -220 Complementary to TIP115/116/117

TIP117

Abstract: TIP110 equivalent TIP-115 TIP115
Contextual Info: MCC TIP115 TIP116 TIP117
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • PNP Epitaxial Silicon Darlington Transistors High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A Min.