TIP11 Search Results

MJE224

Abstract: tip111g TIP11X
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • •

P112

Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are

TIP NPN

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 tip 115
Contextual Info: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L U N MIN MAX 16.51

Contextual Info: MJD117 MJD117 D-PACK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ - I “ Suffix) Electrically Similar to Popular TIP117

Contextual Info: KSH117 KSH117 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP117

Contextual Info: MJD117 MJD117 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP117

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP110 TIP111 TIP112 NPN TIP115 TIP116 TIP117 PNP TO-220 Plastic Package Intended for use in Medium Power Linear and Switching Applications

TIP110A

Contextual Info: ISemiconductor TIP110A PNP Epitaxial Silicon Transistor MEDIUM PO W ER LINEAR SW ITCHING APPLICATIONS • C ollector cu rren t 10A • Collector dissip atio n Pc =75W Tc = 25 <c 1 [ABSOLUTE MAXIMUM RATINGS (Ta = 2 5 X. \ Sym bol R atin g XJnit Collector-Base V oltage

transistor TIP 42

Abstract: TIP 42 transistor Tl 5153 transistor tip 3055 transistor tip 5530 B0738 TIP 122 transistor TIP110 TIP111 TIP 3055 transistor
Contextual Info: TYPES TIP115, TIP116, TIP117 P-N-P DARLINGTON-CONNECTED SILICON POW ER TR A N SISTO R S D ESIG NED IFOR C O M P L E M E N T A R Y USE W ITH T IP 1 10, T IP 1 11, T IP 112 • High SOA Capability, 40 V and 1.25 A 50 W at 25°C Case Temperature Min hpE of 500 at 4 V , 2 A

Contextual Info: MCC TM Micro Commercial Components TIP110/111/112
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Silicon NPN TO-220 package The complementary PNP types are the TIP115/116/117 respectively

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TIP112 Features • • • High DC Cureent Gain: hFE=1000 @ VCE=4.0V, IC=1.0A Low Collector-Emitter Saturation Voltage Industrial Use NPN Epitaxial Silicon

Contextual Info: MCC TM Micro Commercial Components TIP110/111/112
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Silicon NPN The complementary PNP types are the TIP115/116/117 respectively

TIP117

Abstract: MJD117
Contextual Info: MJD117 PNP SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ - I “ Suffix) • Electrically Similar to Popular TIP117

Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 H P H I N T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N -P -N epitaxial-base transistors in m o n o lith ic D arlin g to n c irc u it fo r au dio o u tp u t stages and general purpose a m p lifie r and sw itching applications. T 0 -2 2 0 A B plastic envelope. P-N-P co m p lem ents are

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR NPN TO-220 FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP111 DARLINGTON TRANSISTOR NPN TO-220 FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use

darlington power transistor

Abstract: TIP110/111/112 TIP110-D transistor 400 volts.50 amperes 1N5825 MSD6100 TIP110 TIP111 TIP112 TIP115
Contextual Info: ON Semiconductort NPN Plastic Medium-Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general–purpose amplifier and low–speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ @ IC

TIP115

Abstract: TIP-115 TIP116 TIP117 transistors pnp
Contextual Info: Darlington Power Transistors PNP TIP115/116/117 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:

TIP11

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
Contextual Info: IRAN SYS TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS m C TR O M C S LIMITED T0-220 PACKAGE TOP VIEW • Designed for Complementary Use with TIP110, TIP111 and TIP112 B C • 50 W at 25°C Case Temperature C C • 4 A Continuous Collector Current

T0220

Abstract: BDT62C 2SB1647 BC516 BCV26 BD678 BD680 BDX47 BSP61 T0-220
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: BC516 BCV26 MPSA64 BDX47 BSP61 TIP117 BD678 BD680 BD680A BD682 MJF127 TIP125 TIP127 2SB1624 2SB1020 2SB1254

t1p110

Abstract: TLP110
Contextual Info: G E SOLID STATE 3875081 G E El SOLID STATE d F | 3Û7SGÛ1 DG1733D 3 |~~ Ö 1É 17330 D T ' 3 3 -2 3 D arlin g to n P o w e r Tran sistors_ TIP110, TIP111, TIP112 1336 File Number 2-Ampere N-P-N Darlington Power Transistors < TERMINAL DESIGNATIONS For Low and Medium Frequency Power

Contextual Info: File Number TIP115, TIP116, TIP117 1387 HARRIS SEIHCOND SECTOR 5bE D 43 02 57 1 D 0 4 C H 2 b 445 « H A S 2-Ampere P-N-P Darlington Power Transistors 7 * 3 3 -3 TERMINAL DESIGNATIONS For Low and Medium Frequency Power Switching, Hammer Driver, Audio Amplifier, and

16 amp npn darlington power transistors

Abstract: MOTOROLA TIP115 transistor BTA 006
Contextual Info: MOTOROLA Order this document by TIP110/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic M edium -Pow er Com plem entary Silicon Transistors T IP 1 1 0 . . . designed for general-purpose amplifier and low -speed switching applications. • • • • • T IP 111*

TIP110

Abstract: TIP112 TIP115 TIP117 BE26
Contextual Info: TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS