2N602 Search Results

2N6030

Abstract: 2N6029 2N5629 2N5630
Contextual Info: Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 ・High power dissipations APPLICATIONS ・For high voltage and high power amplifier applications

2N5629

Abstract: 2N5630 2N6029 2N6030
Contextual Info: Inchange Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base

Contextual Info: DIGITRON SEMICONDUCTORS 2N6027-2N6028 PROGRAMMABLE UNIJUNCTION TRANSISTORS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

2N6027

Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n5270 2N6028 Application Note 2n6028 "Programmable Unijunction Transistor" 2n6027 PUT transistor 2n6027 2n527
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two

BD368

Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631
Contextual Info: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0

Contextual Info: 7 = 1 2 ^ 3 7 O D E U M S b • T ‘* 3 V l 5 2 N5629 « ! _ 2 N 6 0 2 9 SGS-THOMSON ê fô m iC T S G S-THOMSON 30E » COMPLEMENTARY HIGH POWER TRANSISTORS DESCRIPTIO N The 2N5629 NPN and 2N6029 (PNP) are comple­ mentary silicon epitaxial-base transistors in Jedec

sc 6038

Abstract: N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037
Contextual Info: MOTOROLA •SC XSTRS/R F 15E D I t3b75SM OOflMSflO Ì | T~33 ü j 2N602Ô thru MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and low-speed switching

2N6028 Application Note

Abstract: 2N6027 PUT 2N6027 pin diagram equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram 2N6028 2N6028 CIRCUIT PUT 2N6027 unijunction application note 2N6027-2N6028
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting

2N6027

Abstract: 2N6028 2N6028 Application Note unijunction application note 2n6027 gate current 20
Contextual Info: 2N6027 2N6028 Program m able Unijunction Transistors Silicon Programmable Unijunction Transistors PUTs 40 VOLTS 300 mW . designed to enable the engineer to "p ro g ra m " unijunction characteristics such as Rbb- V> !V' and Ip bY merely selecting two resistor values. Application includes

2N6028

Abstract: 2N6027 MOTOROLA 2n6027
Contextual Info: 2N6027 2N6028 Programmable Unijunction Transistors Silico n Program m able Unijunction T ran sisto rs P U Ts 40 V O L TS 300 m W . . . d e sig n e d to enable the e n g ineer to "p ro g ra m " unijunction ch aracteristics such as R b B ’ V i IV ’ ar|d Ip by m e re ly selecting tw o re sisto r va lu e s. A p p licatio n includ es

2N6028

Contextual Info: 2N6028 Silicon programmable unijunction transistors PUT's in package TO-92 Pinouts: 1 - Cathode, 2 - Gate, 3 - Anode Ratings (TA = 25°C) Parameter, units Symbol V ak V gkf V qkr V gar It •trm Pt IG AO Ig ks VF Vo Vr lv tR Peak current, j.tA, VR=10V. Rr,=10kU

IRF 548

Abstract: irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800
Contextual Info: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 0.05 0.28 0.25 0.30 0.22 GIS ONS ONS ONS ONS 812 851 851 849 849 2N5886 2N6027 2N6028 2N6031 2N6035 Price Mfr.Õs Type Mfr.Õs Code Page 2.23 0.24 0.23 3.12 0.39

2N6027

Abstract: equivalent transistor of 2n6027 2N6028 PUT 2N6027 2N6028 CIRCUIT 2N6027 CIRCUIT 2n5270 transistor 2N6028 PUT Oscillator 2n6027 PUT 2N6028
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse

2n5060 thyristor

Abstract: Silicon Controlled Rectifiers C106X Triacs 2n5060 transistor 2N6344A 2N6027-2N6028 2N5060 SCR 2N5060 2N6027
Contextual Info: THYRISTOR PART NUMBER PREFIX* DEVICE PREFIX DEVICE DESCRIPTION 2N5060 Series Silicon Controlled Rectifiers SCR 2N6027, 2N6028 Programmable Unijunction Transistor (PUT) 2N6071A Series 2N6344, 49 2N6344A, 48A, 49A Triacs 2N6394 Series 2N6400 Series 2N6504 Series

2N5630

Abstract: 2N5629 2N6029 2N6030
Contextual Info: SavantIC Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base

Low-Power Germanium PNP

Abstract: 2N218 ASZ20 2N295 Diode 13M 2N2374 2n274 CK66A 2N466 TO9 package
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 15 20 25 30 2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ GT125V 2N602A 2N1175 2N1175A 2N1309A 2S8461 2Nl174 CK668 CK66C 2N466 eK66 CK66A GT125G 2N600 2N2374 PTC145 CK678 CK67C 2N467 CK67

2N6027

Abstract: PUT 2N6027 equivalent transistor of 2n6027 2n6028 "Programmable Unijunction Transistor" 2N6028 CIRCUIT 2n5270 2N6027 CIRCUIT Programmable Unijunction Transistor 2N6028 Application Note
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. Application includes thyristor–trigger, oscillator, pulse

2n6029

Abstract: 2N5630
Contextual Info: 2N5629 2N5630 2N6029 2N6030 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base

Contextual Info: 2N6024 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)36# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100m° @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)3.6

Contextual Info: 2N602A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC) I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80 h(FE) Max. Current gain.

BR101

Abstract: bry39 philips bry39 PH 40 E 702 sot23 2N4870 BRY62 Type Transistors 702
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors PNPN DEVICES OVERVIEW leaded surface-m ount TO -72 TO-92 SOT23 SOT143 BR101 BRY39 BRY56 2N4870/PH 2N6027/PH 2N6028/PH BRY61 BRY62

transistor 123 DL

Abstract: equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT
Contextual Info: "Öl G E SOLID STATE DE I 3fl7SDfll OOlflOlô t. 01E 18018 3875081 G E SOLID STATE D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: • Planar Passivated Structure • Low Leakage Current

2N5629 MOTOROLA

Abstract: 2N5629 2n6029 2N6030 2N6031
Contextual Info: M O T O R O LA SC XSTRS/R F 1SE D | b3b?aSM MOTOROLA SEMICONDUCTOR TECHNICAL DATA GGÔMSSG □ | r - 33-/0 NPN PNP 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE . . . designed fo r use in high pow er audio am p lifie r applications and

23741

Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
Contextual Info: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967