2N1998 Search Results

Contextual Info: 2N1998 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)35 I(C) Max. (A)500m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)15 h(FE) Min. Current gain.70 h(FE) Max. Current gain.225

Low-Power Germanium PNP

Abstract: 2N218 ASZ20 2N295 Diode 13M 2N2374 2n274 CK66A 2N466 TO9 package
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 5 10 15 20 25 30 2N422 2Nl09 2N217 2N274 2N633 2N1415 2N1866 2N1998 2N598 GT125SZ GT125V 2N602A 2N1175 2N1175A 2N1309A 2S8461 2Nl174 CK668 CK66C 2N466 eK66 CK66A GT125G 2N600 2N2374 PTC145 CK678 CK67C 2N467 CK67

2N19A

Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924
Contextual Info: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^

2N2090

Abstract: 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Solitron PPC Product PPC Product Solitron Solitron PPC Product Sid St Dvcs Sid St Dvcs Sid St Dvcs Sid St Dvcs g~:~:g~ ~:~~: ~~: KSP1151 KSP1171 SOT7A07 SOT7A07 SOT7A07 SOT7607 SOT7607 SOn607

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

2N1377

Abstract: 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS 1im hFC Min Max ycBo V Max YFWO V Max Vc, V Max 2N465 2N 466 45 35 12 12 30 20 20 20 15 15 27-45 56-90 1 1 2N467 2N508 2N 508A 2N 522 2N 524 35 20 30 15 30 12 10 10 10 15 15 18 25 8 30 20 20 25 15 30 15 6 7 2 10 112-180

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2N2063A

Abstract: 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

AC176

Abstract: AC184 AC127 AC128 2N2635 AC122 GERMANIUM SMALL SIGNAL TRANSISTORS 2N1377 2N634 OC72 2N1924
Contextual Info: ~ - - , - - • - 7 .-«. G E R M A N I U M PO W E R D E V I C E S Fq — - - SDE D . - . ■ . _ _£. _ ^ . - _. . - 3T473?5 00Q05Q? 2 ■ GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

SN72710L

Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Contextual Info: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment