3T473 Search Results

AC176

Abstract: AC184 AC127 AC128 2N2635 AC122 GERMANIUM SMALL SIGNAL TRANSISTORS 2N1377 2N634 OC72 2N1924
Contextual Info: ~ - - , - - • - 7 .-«. G E R M A N I U M PO W E R D E V I C E S Fq — - - SDE D . - . ■ . _ _£. _ ^ . - _. . - 3T473?5 00Q05Q? 2 ■ GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES

DTG-600

Abstract: DTG-2400 DTG-110B DTG110B DTG-1010 sc103 DTG110 2N4276 FS20R06XE3 DTG2400
Contextual Info: 6ERMANIUM POWER DEVICES b3E ]> • 3T47375 DGOOSfl1! Gb7 ■ G P D GERMANIUM POWER TRANSISTORS I Type N um ber C U R R E N T G A IN tlF£ Vck @ 1c M ax. V A Case Type VCBO V ycio y MT-23 MT-23 MT-22 MT-22 MT-22 60 40 80 60 40 4i' 30 60 4Î 30 2N4276 2N4277

germanium power devices corporation

Abstract: G15S20 3T47375 Germanium Power Devices 400AMPS Germanium power
Contextual Info: 3T47375 G0G0731 b=î4 l ü l Germanium Power Devices Corporation G -« *. High Reverse Énergy/Ultra-Low Vp G 15S 20 PRELIMINARY SPECIFICATIONS M k t,. ^ "*Ls°U J î 5 S ^ ! i _ | MAXIMUM RATINGS: IF avg

applications of ujt with circuits

Abstract: UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492
Contextual Info: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR Specifications S IÚCON TYPES I Silicon Unijunction T ra n ­ sistors are three-term inal devices having a stable “ N ” type negative resistance characteristic over a wide tem perature range. A stable peak point

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

2N1377

Abstract: 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS 1im hFC Min Max ycBo V Max YFWO V Max Vc, V Max 2N465 2N 466 45 35 12 12 30 20 20 20 15 15 27-45 56-90 1 1 2N467 2N508 2N 508A 2N 522 2N 524 35 20 30 15 30 12 10 10 10 15 15 18 25 8 30 20 20 25 15 30 15 6 7 2 10 112-180

GAP1000

Abstract: AC204 TO46 TO46 package GAP100 photoreceiver
Contextual Info: G OPTOELECTRONIC PRODUCTS Large Area InGaAs Photo-receiver: • 800 to 1700 nm. • TO-46 package • Differential output • ST, FC, SMA connectors available GPD is pleased to announce the availability of a large-area InGaAs pin photodiode mounted with a transimpedance amplifier in a TO-46 can. The specifications on this sheet are

AD143

Abstract: ad148 ASZ1015 Germanium Power Devices
Contextual Info: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at Type Number ^ 1*0 V ^ CEO y Y ebo y max 32 32 32 - 64 64 64 80 80 50 50 50 32 40 40 40 55 22 22 22 55 80 40 32 32 50 50 50 35 26 26 30 30 32 32 100 100 100 A D Y 10 ADY11 A D Y 12 AD Y13 A D Y 20

Contextual Info: G Ge pn, pin Detectors CAPACITANCE vs. REVERSE BIAS Special Options High response at short wavelength available BNC connectors Thermoelectric coolers Dewars Neutral density filters Reflective filters AR-coated lenses/windows Custom devices including arrays

Contextual Info: GERMANIUM POWER TRANSISTORS Type N um ber Case Type Y CBO V ^ ' IO V C U R R E N T G A IN y,„ , V ^ CES V V Min. V Max. A S A T U R A T IO N V O L TA G E S Vctm Kit,., V V A A 0, c ° C /W 6 A M P G E R M A N IU M P N P C o n t. 2N1137B 2N1138 2N 1138A

2n2153

Abstract: 2N2152 2N1522 TO41 germanium power transistors TO36 germanium PNP 2N1167 2N2287 2N1163
Contextual Info: GERMANIUM POWER TRANSISTORS CURRENT G A IN Type Number Case Type YCBO V V e to V V,.o V V c t, V Vca V h FE Min. YcE Max. V Ic A SA TVRA TION VOL TA GES Yc£Ij Y 11f . . / c @ Ib V V A A 0,-C "C /W 25 AMP GERMANIUM PNP Cont.) 2NI162A 2N1163 2N1163A 2N1164

Germanium Power Devices

Abstract: GAP100 GAP60CS 10E-15 GAP300 GAP60 GAP75 apd 1550 fall time, dark, capacitance 850nm APD germanium power devices corporation
Contextual Info: E GAP60 GAP60CS GAP75 GAP100 GAP300 Electrical Characteristics @ 25 °C GAP60/CS GAP75 GAP100 60 75 100 O Responsivity @ 850nm 0.10 0.20 0.10(0.20) 0.10 (0.20) 0.10 (0.20) AAV min. (typ.) 1300nm 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) A/W min. (typ.)

2N1537A

Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type y kü y VCEO y y tao V ycc. y y„. y Min. CURRENT CA IN fai f VcE @ Max. V A s a t u r a t io n y y 1.50 y OL TAGES ¿e @ Ib A A &J-C ac / w 4 AMP GERMANIUM PNP 2N234A 2N235B 2N255A 2N256A 2N257 TO-3 TO-3

Contextual Info: E GAV30 GAV50 GAV60 GAV100 Electrical Characteristics @ 25 °C GAV30 GAV50 GAV60 GAV100 Units Quantum Efficiency 60 70 60 (70) 60 (70) 60 (70) % min. (typ.) Responsivity @1300nm .76 (.84) .76 (.84) .76 (.84) .76 (.84) AAV min. (typ.) M=1 Breakdown Voltage *

2N3614

Abstract: 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Y CBO V 2N1137B 2N1138 2N1138A 2N1138B TO-3 TO-3 TO-3 TO-3 100 60 90 100 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1021 2N1021A 2N1022

GM10HS

Abstract: GM7HS S20E Germanium power 3T47375 GM2HS Germanium itt
Contextual Info: GERMANIUM POWER DE V I C E S 20E D 3=147375 D000535 7 V-41-41 Ge PHOTODETECTOR Fig 3-1 Typical Specifications at Room Temperative Ge Photodetector ACTIVE DIA. TYPE SPEC TR A L RESPO N SE MM (m) L DARK V (v) R E V E R S E 1UNT R* VOLTAGE C 0R R EN T RESÌSTA NCEKQ