2N525 Search Results

2N404

Abstract: 2N508 2N414 same 2N1305 2N1415 2N525 2N527 GE 2N526 2N396 2N1924
Contextual Info: 281 282 GERMANIUM SIGNAL TRANSISTORS B V ce r fh lb Package Outline No. Specification Sheet Ho. See 2N525. 281 20.10 See 2N524. 281 20.10 See 2N508, 2 N 1 17 5 and 2 N 1 41 3 series. 281 80.15 Pr Max. mW @ 1V, 20mA (iiA) (V) 2N43A’ 34-65 1.3 30 16 45 240

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

Contextual Info: 2N5253 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

2n5253

Contextual Info: 2N5253 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

Contextual Info: 2N5253 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

Contextual Info: 2N5250+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)125 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N4250 motorola

Abstract: bc154 KT501S LOW-POWER SILICON PNP BC313-16
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 20 TMPT956H4 2N5255 2N5256 TMPT812M4 2SA1037KFR 2SA1037KFR MMBA812M6 MMBA812M6 ~~g~~~~~: 25 30 35 . 40 45 50 BC479 2SA733 2SB819 TMPT956H5 2SA493G•TM· Y 2SB435G PN4250 A5T4250 2N4250 MPS4250 D29E7 BC313·1a

2n5253

Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
Contextual Info: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321

SDT96302

Abstract: TO114 SDT96303 transistor 2n4866 2N5250 2N5251 SDT96301 TO-114 C3284 power transistor 2N4866
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N4865 2N4866 2N5250 2N5251 SDT96301 SDT96302 SDT96303 SDT96401 SDT96402 SDT96403 SDT96901 SDT96902 SDT96903 80 120 100 150 60 100 140 60 100 140 60 100 140 10/40 10/40 10/40 10/40 10 10 10 10 10 10 10 10 10 70.0 70.0

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5253 • Hermetic TO-39 Metal package. • Ideally Suited For General Purpose AmplifierApplications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD

2N5253

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N5253 • Hermetic TO-39 Metal package. • Ideally Suited For General Purpose AmplifierApplications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO IC PD

2N525

Contextual Info: 2N5252 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

Contextual Info: 2N5252 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)

B0410

Abstract: MJ050 STI-3007 STI3007 NS034 2N3439S TO5
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C -5 10 - 15 20 >= -30 g:~g TRS3006 042R2 042R2 2S0198 2S0860A 40327L 40327S 2SC1050 2N5252 044R4 044R4 044R4 2N5253 044R8 044R8 TRS30X5 t~~g~~ 35 40 TRS30X TRS30X TRS30X B0410 2N6772 BUW40A BUW40A 2N5092 ~~~~98

2N525

Contextual Info: 2N525 Ge PNP Lo-Pwr BJT 35.98 Transistors Bipolar Germanium PNP. 1 of 2 Home Part Number: 2N525 Online Store 2N525 Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

TO114

Contextual Info: Micmsemi NPN Transistors Pa rt N u m b e r M ic ro s e m i P ackage D iv is io n O u tlin e Type Mil ; Data Î 2N568S 2N5686 2N6322 2N6324 2N6323 2N6325 2N5587 2NS588 2N4865 2N5250 2N4866 2N5251 PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, Inc.

Contextual Info: t3592 A P I A P I' E LE CT RONI C S E L E C T RONI C S INC INC 93A0032 T-33-15 ^3 loD^S^a DE -T -3 3 -1 5 ' i b 0D00D3H 5 POWERlffANSISTO ENGINEERING BULLETIN I 2N5250 TYPE 2 N 5 2 5 0 ,9 0 AM P N PN SILICON PLANAR P O W iR f RANSESTOR LINEAR hFEFROM 100 mA TO 90 AMPS

2N5415

Contextual Info: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

2N558B

Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265

TO63 package

Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3

2N5251

Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
Contextual Info: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20

2N19A

Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924
Contextual Info: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^