2N581 Search Results

2N1378

Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145

2n5818

Contextual Info: m 2N5818 SILICON NPN TRANSISTOR DESCRIPTION: The 2N5818 is an NPN Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 750 mA PACKAGE STYLE TO-92 m 40 V o < lc Pd i s s 500 mW @ Ta = 25 °C Tj -65 °C to +135 °C

2N3638

Abstract: 2N5818 2N5816 2N5815 2N3638A 2N5814 HS5810 2N5822 2N5813 2N5810
Contextual Info: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE VcEO Pt 5 2 5 °C Ccb hpE hFE @ 2V , 2mA @ 10V, 1MHz M ax. (Pt) fr T yp ica l >MH^ NPN PNP (V) Im W ) (mA) M in. M ax. @ 2V, 500mA M in. 2N5810 2M5811 25 500 750 60 200 45 9 .5 150

2N5818

Abstract: 2N5815 2N5814 2N5816 2N5819 2N5810 2N5811 BOX69477
Contextual Info: ! I/ * • 2N5819 ■ /' 2N5810 • th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F WITH X-67 LEAD PREFORMED HEAT SINK THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.

2N5819

Contextual Info: *I I/ • ¡ 2N5810 2N5819 th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.

2SC875 E

Abstract: 2N5816 2SC875 2N5822 2SB504A 2n5813
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS Ic ^CEO Pa mW (A) (V) H,'E POLA­ RITY CASE 2N5810 2N5811 2N5812 2N5813 2N5814 N P N P N TO-92F TO-92F TO-92F TO-92F TO-92F 625 625 625 625 625 0.75 0.75 0.75 0.75 0.75 25 25 25 25 40 60 60 150 150 60

2N5815

Abstract: 2N5816 2N3856 2N5818 2N5819 2N3856A 2N5810 2N5811 2N5812 2N5813
Contextual Info: PNP SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES TO-18 PACKAGE IhpE; — 2V — 2mA a Type VcE(sat) VcEO 2N5811 60-200 5 2N5813 1 50-500 * @ 10mA Min. @ — iiOOmA — 50m A Max. (V) (V) Pt T a :=:25°C (mW) Ccb @ — 10V 1 MHz T ypical

SCR CONTROL BY PUT CIRCUIT

Abstract: ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1
Contextual Info: 2N58110-6017 SERIES SEE GES5810-6017 Silicon Programmable Unijunction Transistor D13T SERIES 2N6027.8 PUT The General Electric PUT is a three-terminal planar passivated PNPN device in the standard plastic low cost TO-98 package. The terminals are designated as anode, anode gate and cathode.

2N3638

Abstract: 2N3638A replacement for 2n2905 2N5816 2N5815 HS5810 2n2905 replacement 2N6003 2N5819 2N6006
Contextual Info: NPN SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES TO 18 PACKAGE @ 10mA Min. V 'E- (i'll 1 @ 500mA, 50mA Max. (V (V) VCEO hFF (a) 2V, 2mA Type 2 N 5810 60-200 * 2N5812 150-500 * 2 N 5814 60-120 C cb @ 10V Typical Pt Ta = 2!5°C (mW) Typical

2N3638 equivalent

Abstract: 2N2219 transistor substitute 2N3638 transistor 2N5816 2N5815 2N5818 of 2n2905 1N4532 2N5813 hs5810
Contextual Info: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE Ccb hpE @ 2V, 2mA Pt 5 2 5 °C Im W ) (mA) Min. Max. hFE @ 2V, 500mA Min. @ 10V, 1MHz Max. (Pt) fr Typ ical >MH^ NPN PNP VcEO (V) 2N5810 2M5811 25 500 750 60 200 45 9.5 150 2N5812 2N5813

2N5819

Abstract: TO92F 2N5810 2N5814
Contextual Info: 2N5810 2N5819 th rou gh COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS 1 CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THEY ARE SUPPLIED IN TO-92F PLASTIC CASE WITH

Contextual Info: 2N5818 SILICON NPN TRANSISTOR DESCRIPTION: The 2N5818 is an NPN Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 750 mA V ce 40 V P diss 500 mW @ TA = 25 °C Tj -65 °C t o +135 °C T stg -65 °C t o +150 °C

Contextual Info: 2N5819 SILICON PNP TRANSISTOR DESCRIPTION: The 2N5819 is an PNP Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 750 mA lc V -40 V ce P diss 500 mW @ Ta = 25 °C Tj -65 °C t o +135 °C T -65 °C t o +150 °C

2N5819

Abstract: 1510LC
Contextual Info: m 2N5819 SILICON PNP TRANSISTOR DESCRIPTION: The 2N5819 is an PNP Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 750 mA PACKAGE STYLE TO- 92 PIN CIRCLE m -40 V o < lc Pd i s s 500 mW @ Ta = 25 °C Tj -65 °C to +135 °C

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

Contextual Info: Dual N-Channel JFET High Frequency Amplifier caiooic CORPORATION 2N5911/2N5912 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V

2N5963

Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP

vane air flow sensor

Abstract: pulse induction metal detector HALL-EFFECT IC allegro 3 PIN hall effect sensor TRIAC 40669 "Linear Hall-effect Sensor" gaussmeter linear hall Magnetic Tachometer with ug*3503 UGN3503
Contextual Info: Application Note 27701B* APPLICATIONS INFORMATION HALL-EFFECT IC APPLICATIONS GUIDE Allegro MicroSystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches

2N3480

Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849

rca 2n2147

Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer

2n2646 equivalent

Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can

2N5815

Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
Contextual Info: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50

2N5816

Abstract: 2N5815 2N5225 2N5143 2N5447 2N4969 2N5226 2N5450 2N5818 2N5819
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) Cob COM PLE­ max MENTARY TYPE (PF) 2N4953 2N4954 2N4969 2N4970 2N4971 N N N N P TO-92B TO-92B