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2N5812 Datasheets (17)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N5812	Central Semiconductor	Leaded Small Signal Transistor General Purpose	Original	PDF	20.5KB	1
2N5812	Central Semiconductor	NPN EPOXY Transistors	Scan	PDF	301.93KB	3
2N5812	Central Semiconductor	NPN Epoxy - Switching and General Purpose Transistors	Scan	PDF	301.93KB	3
2N5812	General Electric	Semiconductor Data Book 1971	Scan	PDF	839.65KB	3
2N5812	Micro Electronics	SILICON AF MEDIUM POWER TRANSISTOR	Scan	PDF	167.11KB	2
2N5812	Micro Electronics	Semiconductor Device Data Book	Scan	PDF	70.1KB	1
2N5812	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	56.61KB	1
2N5812	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	88.32KB	1
2N5812	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	49.69KB	1
2N5812	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	163.91KB	1
2N5812	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	117.33KB	1
2N5812	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	88.71KB	1
2N5812	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	92.66KB	1
2N5812	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.85KB	1

2N5812	Semico	Medium Power Transistors	Scan	PDF	1.28MB	12
2N5812	Semico	Medium Power Amplifiers and Switches	Scan	PDF	121.85KB	1
2N5812	Sprague	Semiconductor Data Book 1977	Scan	PDF	83.98KB	1

2N5812 Price and Stock

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Central Semiconductor Corp


Central Semiconductor Corp 2N5812 SMALL SIGNAL BIPOLAR TRANSISTOR, 0.75A I(C), 25V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N5812		15			1 $1.50 10 $1.25 100 $0.90 1000 $0.90 10000 $0.90	Buy Now

2N5812 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC875 E Abstract: 2N5816 2SC875 2N5822 2SB504A 2n5813 Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS Ic ^CEO Pa mW (A) (V) H,'E POLA RITY CASE 2N5810 2N5811 2N5812 2N5813 2N5814 N P N P N TO-92F TO-92F TO-92F TO-92F TO-92F 625 625 625 625 625 0.75 0.75 0.75 0.75 0.75 25 25 25 25 40 60 60 150 150 60	OCR Scan	2n5810 2n5811 2n5812 2n5813 +102n5814 2n5815 2n5816 2n5817 2n5818 2n5819 2sc875 e 2sc875 2n5822 2sb504a	PDF
2N3638 Abstract: 2N3638A replacement for 2n2905 2N5816 2N5815 HS5810 2n2905 replacement 2N6003 2N5819 2N6006 Contextual Info: NPN SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES TO 18 PACKAGE @ 10mA Min. V 'E- (i'll 1 @ 500mA, 50mA Max. (V (V) VCEO hFF (a) 2V, 2mA Type 2 N 5810 60-200 * 2N5812 150-500 * 2 N 5814 60-120 C cb @ 10V Typical Pt Ta = 2!5°C (mW) Typical	OCR Scan	500ma 2n5810 2n5811 2n5812 +142n5813 2n5814 2n5815 2n5816 2n5817 2n5818 2n3638 2n3638a replacement for 2n2905 hs5810 2n2905 replacement 2n6003 2n5819 2n6006	PDF
2N3638 equivalent Abstract: 2N2219 transistor substitute 2N3638 transistor 2N5816 2N5815 2N5818 of 2n2905 1N4532 2N5813 hs5810 Contextual Info: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE Ccb hpE @ 2V, 2mA Pt 5 2 5 °C Im W ) (mA) Min. Max. hFE @ 2V, 500mA Min. @ 10V, 1MHz Max. (Pt) fr Typ ical >MH^ NPN PNP VcEO (V) 2N5810 2M5811 25 500 750 60 200 45 9.5 150 2N5812 2N5813	OCR Scan	500ma 2n5810 2n5811 2n5812 +132n5813 2n5814 2m5815 2n5816 2m5817 2n5818 2n3638 equivalent 2n2219 transistor substitute 2n3638 transistor 2n5815 of 2n2905 1n4532 hs5810	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	ic hxj 2038 1n52398 db5t tfk 102 cny 70 +6hxj 2038 rca 40361 transistor rca 40362 tfk 680 cny 70 diode equivalent 1n34a 2n5952 equivalent	PDF
Contextual Info: Dual N-Channel JFET High Frequency Amplifier caiooic CORPORATION 2N5911/2N5912 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V	OCR Scan	2n5911/2n5912 367mw 500mw 2n5911 +32n5912 dddch33 300na	PDF
2N5963 Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830 Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) VCES VEBO ICBO @ VCB (nA) (V) ICES (V) ICEV hFE hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) Crb TYP	Original	o-92-18r 2n5812 2n5813 2n5816 +102n5817 mps3706 mps3707 mps3708 2n5963 2n5818 2n5819 2n5822 2n5823 2n5830	PDF
vane air flow sensor Abstract: pulse induction metal detector HALL-EFFECT IC allegro 3 PIN hall effect sensor TRIAC 40669 "Linear Hall-effect Sensor" gaussmeter linear hall Magnetic Tachometer with ug3503 UGN3503 Contextual Info: Application Note 27701B APPLICATIONS INFORMATION HALL-EFFECT IC APPLICATIONS GUIDE Allegro MicroSystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches	Original	27701b 362-a vane air flow sensor pulse induction metal detector +8hall-effect ic allegro 3 pin hall effect sensor triac 40669 linear hall-effect sensor gaussmeter linear hall magnetic tachometer with ug*3503 ugn3503	PDF
2N3480 Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712 Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849	Original	e01702l jc500p mmbc1009f5 tec9013h +14hse130 2n4956 pn3565 a8t3392 2n3395 2n3480 2n3399 tp3565 transitron pa6013 low-power silicon npn 2sc644 s 2n3400 2sc712	PDF
2N5815 Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314 Contextual Info: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50	OCR Scan	2n4238 2n4235 2n4239 2n4236 +112n4314 2n4400 o-92a 2n4402 2n4401 2n5815 2n5225 n5226 2n4971 2n5042 2n5143	PDF
2N5816 Abstract: 2N5815 2N5225 2N5143 2N5447 2N4969 2N5226 2N5450 2N5818 2N5819 Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) Cob COM PLE max MENTARY TYPE (PF) 2N4953 2N4954 2N4969 2N4970 2N4971 N N N N P TO-92B TO-92B	OCR Scan	2n4953 o-92b 2n4954 2n4969 +12o-106 2n4970 2n4971 2n5816 2n5815 2n5225 2n5143 2n5447 2n5226 2n5450 2n5818 2n5819	PDF
2N3638 Abstract: 2N5818 2N5816 2N5815 2N3638A 2N5814 HS5810 2N5822 2N5813 2N5810 Contextual Info: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE VcEO Pt 5 2 5 °C Ccb hpE hFE @ 2V , 2mA @ 10V, 1MHz M ax. (Pt) fr T yp ica l >MH^ NPN PNP (V) Im W ) (mA) M in. M ax. @ 2V, 500mA M in. 2N5810 2M5811 25 500 750 60 200 45 9 .5 150	OCR Scan	500ma 2n5810 2n5811 2n5812 +112n5813 2n5814 2m5815 2n5816 2m5817 2n5818 2n3638 2n5815 2n3638a hs5810 2n5822	PDF
2N5818 Abstract: 2N5815 2N5814 2N5816 2N5819 2N5810 2N5811 BOX69477 Contextual Info: ! I/ * • 2N5819 ■ /' 2N5810 • th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F WITH X-67 LEAD PREFORMED HEAT SINK THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.	OCR Scan	2n5810 2n5819 o-92f 2n5811 +52n5814 2n5818 2n5815 2n5816 box69477	PDF
IC cbe Abstract: 2N6426 MPS3708 Contextual Info: Sm all Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE h FE v CBO v CEO v EBO •CBO 8 v CBO (V) (V) (V) m •TO-92-18R MIN VCES MIN MIN v CE (V) (V) TO-92-18R O lC VCE(S;W )® 'c <mA) (V) (mA) hfe(1kHZ) *r c ob NF ‘ oft (PF)	OCR Scan	o-92-18r to-92-18r 2n5812 2n5813 +92n5816 2n5817 2n581b mps3415 mps3702 mps3704 ic cbe 2n6426 mps3708	PDF
TRIAC 97A6 Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1	OCR Scan	od-80 od-323 ot-23 ot-89 +13ot-143 ot-223 ot-323 triac 97a6 s0805bh 13003 transistor to220 equivalent triacs bt 804 600v triac bt 808 600c diode sot-23 marking 15d zener diode 1n ph 48 6bs smd transistor z0409mf equivalent bt 808 600c	PDF

Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 T Y P E NO. FAMILY LEAD CO DE VCBO vCEO ItPE v E B O tCB O v C B O (V) (V) TO-92-18R MIN VCES MIN MIN (V) @ V CE (V) (V) e ic (mA) TO-92-18R V CE(S<fcT) ® < (V) (mA) ’te e s MIN *CEV M AX Cob	OCR Scan	o-92-18r 2n5812 2n5813 2ns816 +52ns817 2n5818 2n5819 2n5822 2n5823	PDF
2N3859 Contextual Info: Small signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VcBO v CEO v EBO ICBO V (V) (V) m VCES MIN 18 MIN 5.0 •«c e s 'c e v MAX 500 @ VCE e i e hFE VCBC (V) (V) (lllA) VCE(SA T )@ «C Cob (V) (mA) •hfe(1kHZ) T NF •off (PF) (MHz) ( » )	OCR Scan	2n3859	PDF
TRIAC 40669 Abstract: hall effect sensor ugn3503 Magnetic Tachometer with ug3503 gaussmeter PICKUPS coil crankshaft sensor 40669 Triac how to connect 2N3055 motor ugn3503 induction balance metal detector vane air flow sensor Contextual Info: Application Note 27701B HALL-EFFECT IC APPLICATIONS GUIDE APPLICATIONS INFORMATION HALL-EFFECT IC APPLICATIONS GUIDE Allegro Microsystems uses the latest bipolar integrated circuit technology in combination with the century-old Hall effect to produce Hall-effect ICs. These are contactless, magnetically activated switches	Original	27701b 362-a triac 40669 hall effect sensor ugn3503 +8magnetic tachometer with ug*3503 gaussmeter pickups coil crankshaft sensor 40669 triac how to connect 2n3055 motor ugn3503 induction balance metal detector vane air flow sensor	PDF
2N5381 Abstract: 2N2926 transistors TO-92 case 2N3707 Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 ICES ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff	Original	2n5381 2n2926 transistors to-92 case 2n3707	PDF
2N5819 Contextual Info: *I I/ • ¡ 2N5810 2N5819 th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.	OCR Scan	2n5810 2n5819 o-92f 2n5811 +12n5814	PDF
2N6008 Abstract: 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014 Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4	OCR Scan	50/ia 800ma get706 get708 +15get914 get3013 get3646 ge1705 cet708 2n6008 2n6000 2n3960a 2n5998 2n6006 2n6015 2n60c 2n6002 2n8004 get3014	PDF
d33025 Abstract: 2N6000 2n3391 2N6006 2N6002 GET3013 GET3014 GET3638 2n2926 GET706 Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	50/ia 800ma get706 get708 +13get914 get3013 get3646 ge1705 cet708 d33025 2n6000 2n3391 2n6006 2n6002 get3014 get3638 2n2926	PDF
2N6004 Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015 Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	50/ia 800ma get706 get708 +15get914 get3013 get3646 ge1705 cet708 2n6004 2n3960a 2n3856 d33025 2n4424 2n8004 2n6000 2n6016 2n3856a 2n6015	PDF
2N5225 Abstract: 2N5815 2N5816 2n5814 2N5822 2N5420 2N5042 Contextual Info: Medium Power Amplifiers and Switches M AXIMUM RATINGS TYPE NO. POLA CASE RITY H FE VcE sat VcEO Pd Ic (mW) (A) (V) VcER * min max Ic ^C E max (mA) (V) (V) (A) Ic fT C 0b min max (MHz) (MHz) COMPLE MENTARY TYPE 2N5042 2N5220 2N5221 2N5225 2N5226 P N P	OCR Scan	2n5042 2n5220 2n5221 2n5225 +112n5226 2n5354 2n5355 2n5356 2n5365 2n5366 2n5815 2n5816 2n5814 2n5822 2n5420	PDF
JE1100 Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466 Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices	OCR Scan	je1100 mfc8040 mfc8030 mc1316 +6triac 9707 schematic of mc1466 transistor mje 5332 je 3055 motorola mcr407-2 mc1466	PDF

2N5812 Search Results

2N5812 Datasheets (17)

2N5812 Price and Stock

Central Semiconductor Corp 2N5812

2N5812 Datasheets Context Search

2SC875 E

2N3638

2N3638 equivalent

IC HXJ 2038

2N5963

vane air flow sensor

2N3480

2N5815

2N5816

2N3638

2N5818

IC cbe

TRIAC 97A6

2N3859

TRIAC 40669

2N5381

2N5819

2N6008

d33025

2N6004

2N5225

JE1100