2N3638
Abstract: 2N5818 2N5816 2N5815 2N3638A 2N5814 HS5810 2N5822 2N5813 2N5810
Contextual Info: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE VcEO Pt 5 2 5 °C Ccb hpE hFE @ 2V , 2mA @ 10V, 1MHz M ax. (Pt) fr T yp ica l >MH^ NPN PNP (V) Im W ) (mA) M in. M ax. @ 2V, 500mA M in. 2N5810 2M5811 25 500 750 60 200 45 9 .5 150
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500ma2n58102n58112n5812+112n58132n58142m58152n58162m58172n58182n36382n58152n3638ahs58102n5822
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2N5818
Abstract: 2N5815 2N5814 2N5816 2N5819 2N5810 2N5811 BOX69477
Contextual Info: ! I/ * • 2N5819 ■ /' 2N5810 • th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F WITH X-67 LEAD PREFORMED HEAT SINK THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.
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2n58102n5819o-92f2n5811+52n58142n58182n58152n5816box69477
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2N5819
Contextual Info: *I I/ • ¡ 2N5810 2N5819 th ro u g h COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS I CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS.
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2n58102n5819o-92f2n5811+12n5814
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2SC875 E
Abstract: 2N5816 2SC875 2N5822 2SB504A 2n5813
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS Ic ^CEO Pa mW (A) (V) H,'E POLA RITY CASE 2N5810 2N5811 2N5812 2N5813 2N5814 N P N P N TO-92F TO-92F TO-92F TO-92F TO-92F 625 625 625 625 625 0.75 0.75 0.75 0.75 0.75 25 25 25 25 40 60 60 150 150 60
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2n58102n58112n58122n5813+102n58142n58152n58162n58172n58182n58192sc875 e2sc8752n58222sb504a
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2N3638 equivalent
Abstract: 2N2219 transistor substitute 2N3638 transistor 2N5816 2N5815 2N5818 of 2n2905 1N4532 2N5813 hs5810
Contextual Info: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE Ccb hpE @ 2V, 2mA Pt 5 2 5 °C Im W ) (mA) Min. Max. hFE @ 2V, 500mA Min. @ 10V, 1MHz Max. (Pt) fr Typ ical >MH^ NPN PNP VcEO (V) 2N5810 2M5811 25 500 750 60 200 45 9.5 150 2N5812 2N5813
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500ma2n58102n58112n5812+132n58132n58142m58152n58162m58172n58182n3638 equivalent2n2219 transistor substitute2n3638 transistor2n5815of 2n29051n4532hs5810
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2N5819
Abstract: TO92F 2N5810 2N5814
Contextual Info: 2N5810 2N5819 th rou gh COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS 1 CASE TO-92F LEAD PREFORMED THE 2N5810 THROUGH 2N5819 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THEY ARE SUPPLIED IN TO-92F PLASTIC CASE WITH
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2n58102n5819o-92f-15rmrt--+32n58142h5811to92f
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BC335
Abstract: MPS005 CS9013 BC333 BC358 TMPT1009F3 LOW-POWER SILICON NPN 2SC403 2S060 2S0638
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 MMBC1009F3 2SC403 2N5810 GES5810 TP5810 2S0638 2S0400 CS9013 2N703 2N3241 ~~~~~~ 15 20 MPS3402 MPS3402 MPS3403 MPS3403 MPS3414 MPS3414 2N3402 2N3414 §E~~414 25 30 35 40 45 50 55 60 TMPT1009F2 2SC371 MPS005
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mmbc1009f32sc4032n5810ges5810+13tp58102s06382s0400cs90132n7032n3241bc335mps005bc333bc358tmpt1009f3low-power silicon npn2s060
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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2N5815
Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
Contextual Info: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50
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2n42382n42352n42392n4236+112n43142n4400o-92a2n44022n44012n58152n5225n52262n49712n50422n5143
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2N5816
Abstract: 2N5815 2N5225 2N5143 2N5447 2N4969 2N5226 2N5450 2N5818 2N5819
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA RITY CASE MAXIMUM RATINGS HFE Pd IC VCEO mW (A) (V) min max IC (mA) VCE (V) VCE(sat) max (V) (A) IT min (MHz) Cob COM PLE max MENTARY TYPE (PF) 2N4953 2N4954 2N4969 2N4970 2N4971 N N N N P TO-92B TO-92B
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2n4953o-92b2n49542n4969+12o-1062n49702n49712n58162n58152n52252n51432n54472n52262n54502n58182n5819
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2N5381
Abstract: 2N5383 2N5376 IC cbe 2N4401 2N4402 2N4403 2N4410 2N5769 2N4952
Contextual Info: !J Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE V cB O (V) hFE v CEO V e b O •CBO VCBC (V) (nA) (V) (V) *'CES •TO-92-18R MIN *VCES MIN MIN *ICEV @ VCE @ lc (V) <mA) TO-92-18R V CE(SAT) ® *C c ob (V) <mA) *h ,e (1 kH Z )
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o-92-18r2n44012n44022n4403+92n44102n44242n4952ampl/2502n57692n53812n53832n5376ic cbe
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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2N5381
Abstract: 2N5383
Contextual Info: I ! Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE vCBO V e t o * • * (V) (V) m «Ü * VCBC m . . wr ««eg •• c m (n*A) TO-92-18R Cob (mA) *CES TO-92-1W» M i yni MM *6W *r NÉ *off <PF) <MH*} *c rt> TYP MAX MM MAX MAX
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o-92-1wo-92-18r2n53812n5383 |
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2N5381
Abstract: 2N2926 transistors TO-92 case 2N3707
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff
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2n53812n2926transistors to-92 case2n3707 |
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2N5381
Abstract: 2N5383 2N4401 2N4402 2N4403 2N4410 2N4424 2N4952 2N4953 2N5086
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO CODE (V) VCEO VEBO ICBO @ VCB (nA) (V) (V) *ICES (V) *VCES *ICEV hFE @ VCE @ IC *hFE (1kHZ) TO-92-18R VCE (SAT) @ IC Cob (V) (mA) (V) (mA) 500 fT NF toff (pF) (MHz) (dB) *Crb *TYP
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o-92-18r2n44012n44022n4403+102n57722n58102n58112n53812n53832n44102n44242n49522n49532n5086
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2N6008
Abstract: 2N6000 2n3960a 2N5998 2N6006 2N6015 2N60C 2N6002 2n8004 GET3014
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 2N6000 2N60Q2 2N6001 2N6S03 40 GET2221A GET2222A 2N 6004 2N 6006 2N6010 2N6012 50 60 GET»29 60 GET24S4
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50/ia800maget706get708+15get914get3013get3646ge1705cet7082n60082n60002n3960a2n59982n60062n60152n60c2n60022n8004get3014
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d33025
Abstract: 2N6000 2n3391 2N6006 2N6002 GET3013 GET3014 GET3638 2n2926 GET706
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A
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50/ia800maget706get708+13get914get3013get3646ge1705cet708d330252n60002n33912n60062n6002get3014get36382n2926
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2N6004
Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A
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50/ia800maget706get708+15get914get3013get3646ge1705cet7082n60042n3960a2n3856d330252n44242n80042n60002n60162n3856a2n6015
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2N5225
Abstract: 2N5815 2N5816 2n5814 2N5822 2N5420 2N5042
Contextual Info: Medium Power Amplifiers and Switches M AXIMUM RATINGS TYPE NO. POLA CASE RITY H FE VcE sat VcEO Pd Ic (mW) (A) (V) VcER * min max Ic ^C E max (mA) (V) (V) (A) Ic fT C 0b min max (MHz) (MHz) COMPLE MENTARY TYPE 2N5042 2N5220 2N5221 2N5225 2N5226 P N P
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2n50422n52202n52212n5225+112n52262n53542n53552n53562n53652n53662n58152n58162n58142n58222n5420
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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je1100mfc8040mfc8030mc1316+6triac 9707schematic of mc1466transistor mje 5332je 3055 motorolamcr407-2mc1466
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2n5963
Contextual Info: I Sm all Signal Transistors TO-92 Case TO-92 T Y P E NO. F A M IL Y LEA D VcBO v CEO v EBO V (V ) (V ) 'C B O hFE p V CBC v CE @ IC (V ) (m A ) V C E ( S A T ) ® !C C 0b »T NF to ff CODE (V ) (V ) (m A ) *< CES *VC E S 2N2712 NPN A M PU SW ITCH ECB
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2n27122n27142n29232n2924+72n29252n29262n33922n33932n33952n33962n5963
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D29A5
Abstract: 2N5381 transistor 3405 npn 2N5383 D29A4 2N4425 2N2713 2N5380 2N5368 2N5371
Contextual Info: SPRAGUE Econoline P la stic -M o ld e d Silicon SEPT" Transistors Type No. P O L A R IT Y GENERAL-PURPOSE AMPLIFIERS/SWITCHES D -C C U R R E N T G A IN h FE PD Ta = 25 C (mW) V (BR) CBO V olts V (BR) CEO Vo lts V (BR) EBO Vo lts ICBO mA Cond tions Max. lc
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2n53682n53702n53712n5372+122n53732n49542n54182n5419d29a4d29a52n5381transistor 3405 npn2n53832n44252n27132n5380
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2N3565
Abstract: 2N5137 2N5381 2N5136 2N5172 2N4967 2N3565 to-106 2N5371 2N4275 2N5220
Contextual Info: 0000211 a h l 1989963 CENTRAL SEMICONDUCTOR 61C 0 0 21 1 T -J L s V / NPN EPOXY - SWITCHING AND GENERAL PURPOSE Cont'd. Ul o > V min max mA V 20 20 25 15 15 3 3 5 3 3 20 20 100 35 30 400 400 500 350 600 150 150 10 2 50 1 1 10 10 10 .25 .25 .25 0.4 0.5 15
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2n5136-o-1052n5137o-106+132n51722n52192n52202ns2232n52252n53682n35652n53812n51362n49672n3565 to-1062n53712n4275
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