MPS3403 Search Results

ic T M 2313

Abstract: MPS3403
Contextual Info: M O T OR OLA SC 12E D I b3b?s5M oaabobñ ^ X S T RS /R F r-X7- S' MPS3403 M A X IM U M RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage Vc b o 25 Vdc Vdc Bating Ve b o 5.0 Collector Current — Continuous ic 500 mA Total Device Dissipation @ T>\ = 25°C

BC335

Abstract: MPS005 CS9013 BC333 BC358 TMPT1009F3 LOW-POWER SILICON NPN 2SC403 2S060 2S0638
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 MMBC1009F3 2SC403 2N5810 GES5810 TP5810 2S0638 2S0400 CS9013 2N703 2N3241 ~~~~~~ 15 20 MPS3402 MPS3402 MPS3403 MPS3403 MPS3414 MPS3414 2N3402 2N3414 §E~~414 25 30 35 40 45 50 55 60 TMPT1009F2 2SC371 MPS005

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

t3d 18

Contextual Info: SPRAGUE/SENICOND 8 5 1 4 0 1 9 SP RA GU E! GROUP T3 D • ÖS13ÖS0 S E M I C O N D S / ICS GQ03Sb4 4 ■ 93D 03 56 4D BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain 'cBO 100 100 2000

2n2846

Abstract: 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola 2C2222A MPS8092 2N4401 die 2n3116
Contextual Info: 34 M O T O R O L A SC -CDIODES/OPTO} 1 D • t,3fc,7S55 0 0 3 7 ^ 7 4 34C 37974 7"-3r- /S SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A — DIE NO. NPN LINE SOURCE — DMB101 This die provides performance similar to that of the following device types:

MPS2712C

Abstract: MPS2714C MPS2716C THC6222 THC6224 THC6426 THC6427 THC6428 THC6429 THC6714
Contextual Info: ALLEGRO 8514019 MICROSYSTEMS SPRAGUE. INC T3 0SG433Ô D SEMIC ONDS/ ICS 93D GGG35b4 3 • AL6R 0 3 5643> BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain •cBO 100 100 500 500 100 100

2N2540

Abstract: 2N2846 2n5219 MPSD05 2N1959 2n3299
Contextual Info: 34 MOTOROLA SC -CDIODES/OPTO} D 1 L3fc,7355 □□37T74 34C 37974 7 " - 3 r - /$• SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A DIE NO. — LINE SOURCE — DMB101 i npn This die provides performance similar to that of the following device types:

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: AL L E G R O M I C R O S Y S T E M S INC 8514019 SPRAGUE. T3 D • 0SGM33Ô OGOBS^Ü S E M I C O N D S / ICS 4 ■ ALGR 93D 0359.0 D r-a7-ft? _' PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

MPS3565

Contextual Info: SPRAGUE/SEMICOND GROUP 13 85 14 019 SPRAGUE. D • ÖS1 3 ÖS0 0 0 0 3 5 1 0 S E M I C OND S/ IC S S ■ 93D 03590 D T '1 1 -^ 0 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO O O -« .