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    MPS3390 Search Results

    MPS3390 Datasheets (12)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MPS3390
    Crimson Semiconductor Transistor Selection Guide Scan PDF 1.48MB 36
    MPS3390
    Micro Electronics Semiconductor Device Data Book Scan PDF 59.46KB 1
    MPS3390
    Micro Electronics NPN silicon planar epitaxial transistor Scan PDF 169.93KB 2
    MPS3390
    Motorola Semiconductor Data Library Volume 3 1974 Scan PDF 53.81KB 2
    MPS3390
    Motorola NPN silicon general purpose transistor. Scan PDF 173.63KB 5
    MPS3390
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 55.55KB 1
    MPS3390
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 167.14KB 1
    MPS3390
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 117.06KB 1
    MPS3390
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 100.61KB 1
    MPS3390
    Semico Audio Frequency Small Signal Transistors Scan PDF 662.38KB 7
    MPS3390
    Sprague Semiconductor Data Book 1977 Scan PDF 84.52KB 1
    MPS3390C
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 117.06KB 1
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    MPS3390 Price and Stock

    Micro Electronics Corporation

    Micro Electronics Corporation MPS3390

    SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 25V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MPS3390 5,372
    • 1 $0.44
    • 10 $0.44
    • 100 $0.44
    • 1000 $0.18
    • 10000 $0.16
    Buy Now

    MPS3390 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mps3391

    Contextual Info: MOTOROLA SC ÎXSTR S/R F> 6367254 MOTOROLA SC DE t3t72S4 005177^ (XSTRS/R 96D 8 1 7 7 9 F D MPS3390, MPS3391, MPS3396 thru MPS3398 M A X IM U M RATINGS Symbol Value U nit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 25 Vdc Emitter-Base Voltage


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    t3t72s4mps3390mps3391mps3396+3mps3398o-226aamps3397 PDF

    MPS3394

    Abstract: MPS3393 MPS3391 MPS3392 MPS3395 MPS3398 MPS3563 MPS3390 MPS3396 MPS3397
    Contextual Info: MPS3390 silicon thru MPS3398 NPN S IL IC O N A M P L IF IE R T R A N S IS T O R S NPN S IL IC O N A N N U L A R A M P L IF IE R T R A N S IS T O R S . designed for use in general-purpose and high-gain amplifier or driver applications. • Collector-Emitter Breakdown Voltage B V c e O = 25 Vdc (Min) @ lc = 1.0 mAdc


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    mps3390mps3398mps3391mps3392+6mps3393mps3394mps3395mps3396mps3397mps3563 PDF

    pnp 2N3906 beta

    Abstract: 2n4058 2N3395 N3904 2N2926 2N3396 2N3397 2N3398 to-92hs D29E2-J1
    Contextual Info: SP RAGUE Econoline Silicon S E P T R Tr ans istors ▼Table 1 - GUARANTEED D-C BETA DISTRIBUTION BY GROUP 55-110 h n FE N s Color >sCode G ro u p S^ Red 2N3395 - 2N3396 - 90-180 150-300 250-500 Orange - 10-60% Plastic-Molded «Table 2 - GUARANTEED A-C BETA DISTRIBUTION


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    2n33952n33962n33972n3398+112n29262n44012n44022n4403mps2713mps2714pnp 2n3906 beta2n4058n3904to-92hsd29e2-j1 PDF

    2N915

    Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
    Contextual Info: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:


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    dmb1052c39042n9152n916+132n27162n29232n29242n29252n29262n33902n2926 transistormps33912n37102n2924 transistor2n3904 diemps3394mps3392 PDF

    Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min max VCE(sat) fT Cob IC VCE max IC min max max (mA) (V) (V) (mA) (M Hz) (M Hz) (dB) 2 2 2 2 2 4.5 10 10 10 10 - 5 12 12 12 3.5 - - 10 10 10


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    mps2716mps2923mps2924mps2925+2mps2926o-92a PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor PDF

    t3d 18

    Contextual Info: SPRAGUE/SENICOND 8 5 1 4 0 1 9 SP RA GU E! GROUP T3 D • ÖS13ÖS0 S E M I C O N D S / ICS GQ03Sb4 4 ■ 93D 03 56 4D BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain 'cBO 100 100 2000


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    gq03sb4thg6222thc6224thc6426+6thc6427thc6428thc6429thc6714b--05t3d 18 PDF

    cs9011j

    Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
    Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •


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    2n15072n15662ni6132n1889+162n18902n18932n19732n19742ni975o-237cs9011jmps151pn5180mps4424bc56088c527-252n3304bc5568pn2897mps9633c PDF

    NPN transistor 2n4400 beta value

    Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
    Contextual Info: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN


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    2n27112n27122n29242n2925+142n29262n44012n44022n4403mps2713mps2714npn transistor 2n4400 beta valuetp4058npn transistor 2n 3904tp4059transistor ebc 3904tp40602n2712 to-92hstp3644 PDF

    BSY73

    Abstract: BSY89 BFY39 BSY41 BFX93 BFY76 BFY77 BSW19 BSW19A BSW20
    Contextual Info: T YPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers Pd mW 'c Im A I V C EO (V ) FE V C E (S A T ) min max •c Im A I V CE (V ) 0.01 0.01 5 5 BFX93 BFX93 N N TO-18 TO-18 300 300 30 30 45 45 40 100 120 300 BFY39 BFY76 BFY77 N N N TO-18 TO-18


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    bfx93bfy39bfy76bfy77+8bsw19bsw19absw20o-92fbsw20absy73bsy89bsy41 PDF

    MPS2712C

    Abstract: MPS2714C MPS2716C THC6222 THC6224 THC6426 THC6427 THC6428 THC6429 THC6714
    Contextual Info: ALLEGRO 8514019 MICROSYSTEMS SPRAGUE. INC T3 0SG433Ô D SEMIC ONDS/ ICS 93D GGG35b4 3 • AL6R 0 3 5643> BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain •cBO 100 100 500 500 100 100


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    0s0m330003sbmthc6222thc6224+12thc6426thc6427mps3393cmps3394cmps3395cmps3396cmps2712cmps2714cmps2716cthc6428thc6429thc6714 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680 PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    je1100mfc8040mfc8030mc1316+6triac 9707schematic of mc1466transistor mje 5332je 3055 motorolamcr407-2mc1466 PDF

    2SA532

    Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
    Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G


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    057-2g1611g1620g1621-2g+161623g1641g1n40011n40021n40041n40052sa532bc109 bc184 bc549bc3172sc734 yms181abc159 82sc876ttp31aml78m06abc357 PDF

    MPS3391

    Abstract: MPS930A MPS3390 MPS929 61807 MPS930 2N3903 MPS3396 MPS3397 MPS3398
    Contextual Info: MOTOROLA SC ÎXSTRS/R 6367254 FJ ôF|t.3b?as4 0 Dfli?bb a J ~ MOTOROLA SC XSTRS/R 96D 8 1 7 6 6 F M A X IM U M R A T IN G S Sym bol Rating MPS929 MPS930A 45 U nit Vdc Collector-Em itter Voltage VCEO Collector-Base Voltage VcBO 45 60 Vdc Emitter-Base Voltage


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    mps929mps930amps3391mps3390+661807mps9302n3903mps3396mps3397mps3398 PDF

    2sc711

    Abstract: 2SC871 2SC374 2SC2001L PA6013B 2SC631 2SC1684 R TBC338 LOW-POWER SILICON NPN PET4003
    Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391


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    hse4152sc8702sc5382sc539+15a5t3391a5t3391aa8t3391a8t3391amps3391a2sc7112sc8712sc3742sc2001lpa6013b2sc6312sc1684 rtbc338low-power silicon npnpet4003 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    2N577

    Abstract: MP03725 8VC80
    Contextual Info: I DEVICE TYPE PA C K A G E BVC EO 8VC 8 0 BVEBO 1CBO 9 VCB IV I M IN IV I M IN V I M IN |m A | MAX IV HFE M IN MAX VC 4 1C (V I 1 —A 1 FT COB (p li M A * (M H / I 2N5355 2N5365 2N 5366 2N5400 2N5401 PN P PNP PN P PNP PNP TO-92 TO-92 TO-92 TO-92 TO-92


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    2n53552n53652n54002n5401+92n54472n54482n54492n54502n545imps33952n577mp037258vc80 PDF

    sC3228

    Abstract: BC286 bc 7-25 pnp MPS9681T BC527-25 BC5508 BC537 BC5568 2N5222 8C416
    Contextual Info: CRIMSON SEMICONDUCTOR INC TT 25 14 09 6 C R I M S O N S E M I C O N D U C T O R 99D 00293 DEVICF 2N1507 2N1566 2N I613 2 N I7 U 2N1889 2N1890 TYPE NPN NPN NPN NPN NPN PACKAGE DE | S S I M Q T L INC D T Ô / - COB HFE @ VC & iC By.CEO BVCBO BVEBO ICBO @ VCB


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    15514chb2n15072n15662ni613+162n18892n18902n18932n19732n1974o-237sc3228bc286bc 7-25 pnpmps9681tbc527-25bc5508bc537bc55682n52228c416 PDF

    Contextual Info: AL L E G R O M I C R O S Y S T E M S INC 8514019 SPRAGUE. T3 D • 0SGM33Ô OGOBS^Ü S E M I C O N D S / ICS 4 ■ ALGR 93D 0359.0 D r-a7-ft? _' PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C


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    0sgm33mps2712mps2714mps2716+6mps2923mps2924mps2925mps2926mps3390mps3391 PDF

    BC546 IC

    Abstract: KM901
    Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ RITY MAXIMUM RATINGS CASE Pd Ic V ceo m W (mA) (V ) Hj E min max ^CE(sat) fr min max (mA) (MHz) (MHz) N.F. max (dB) 150 150 150 4.5 4.5 4.5 10 10 4 Ic VcE max (mA) (V ) (V ) C 0b Ic BC45Î BC452 BC453


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    bc452bc453bc454bc455+8bc456bc478bc479bc546bc547bc548bc546 ickm901 PDF

    BC286

    Abstract: 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901
    Contextual Info: CRIMSON SE M IC ON DU CT OR INC TT DE | SSlMGTt DDDDET3 □ 2514096 C R I M S O N S EM IC O N D U C T O R INC 99D D 00293 T - 2 - 7 - ó / By.CEO BVCBO BVEBO ICBO @ VCB HFE @ VC & iC v COB Vi MiN IV1M.N . MN i-Al MAh (V MIN MA> .V (-*• i|l w»> FT V-'l


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    2s140962n15072n15662n1613+162ni7112n18892n18902n18932n19732n1974bc2862n32522n55s12n3304cs1602bbc3206mps9680tbc2388mps9681tmps901 PDF

    Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. CASE BSX38 BSX51 BSX51A BSX51B BSX52 N N N N N TO-18 TO-18 TO-18 TO-18 TO-18 345 300 300 300 300 100 200 200 200 200 30 .25 50 60 25 100 75 50 75 180 BSX52A BSX52B BSY41 BSY72 BSY73 N N P N N TO-18 TO-18 TO-18


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