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    BFY76 Search Results

    BFY76 Datasheets (25)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BFY76
    Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF 32.03KB 1
    BFY76
    Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package Original PDF 10.83KB 1
    BFY76
    Continental Device India Semiconductor Device Data Book 1996 Scan PDF 91.13KB 1
    BFY76
    Crimson Semiconductor Transistor Selection Guide Scan PDF 1.48MB 36
    BFY76
    Micro Electronics Semiconductor Device Data Book Scan PDF 59.46KB 1
    BFY76
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 55.21KB 1
    BFY76
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 170.94KB 1
    BFY76
    Unknown Transistor Replacements Scan PDF 62.12KB 1
    BFY76
    Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF 66.98KB 1
    BFY76
    Unknown Transistor Replacements Scan PDF 88.97KB 1
    BFY76
    Unknown Transistor Replacements Scan PDF 67.73KB 1
    BFY76
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 111.14KB 1
    BFY76
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 107.78KB 1
    BFY76
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 85.61KB 1
    BFY76
    Unknown Shortform Electronic Component Datasheets Short Form PDF 46.92KB 1
    BFY76
    National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF 37.84KB 1
    BFY76
    National Semiconductor PRO ELECTRON SERIES - JFET Scan PDF 1.51MB 36
    BFY76
    National Semiconductor Pro-Electron Transistor Datasheets Scan PDF 33.85KB 1
    BFY76
    Raytheon Selection Guide 1977 Scan PDF 44.6KB 1
    BFY76
    Semico Audio Frequency Small Signal Transistors Scan PDF 662.38KB 7
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    BFY76 Price and Stock

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    SGS Semiconductor Ltd BFY76

    TRANSISTOR,BJT,NPN,45V V(BR)CEO,50MA I(C),TO-18
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BFY76 1,950
    • 1 $8.85
    • 10 $8.85
    • 100 $8.85
    • 1000 $4.42
    • 10000 $4.42
    Buy Now

    Others PBFY76

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange PBFY76 2,000
    • 1 -
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    • 1000 -
    • 10000 -
    Get Quote

    Texas Instruments BFY76

    Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian BFY76 6,601
    • 1 -
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    BFY76 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bfy76

    Contextual Info: BFY76 SILICON PLANAR NPN LO W -LEVEL, LOW-NOISE AM PLIFIER T h e B F Y 7 6 is a s ilic o n p la n a r e p ita x ia l N P N tr a n s is to r in Je d e c T O - 1 8 m e ta l case. I t is d e sig ned f o r use in h ig h -p e rfo r m a n c e , lo w le v e l, lo w n o is e a m p lifie r c ir c u its fr o m a u d io to


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    bfy768x10j PDF

    bcy591x

    Abstract: 2N6429A sot23 12p BCY590 2SC538A TBC337A BC521 LOW-POWER SILICON NPN TMPT6429 BCY59C
    Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18


    Original
    bc382ksc10722sc538abcx59-9+11bcx70jbcy591xtbc337abcw66rg2n6429asot23 12pbcy590bc521low-power silicon npntmpt6429bcy59c PDF

    IC350

    Contextual Info: BFY76 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products


    Original
    bfy76o206aa19-jun-02ic350 PDF

    BFY76

    Contextual Info: 3QE D * • 7=12=1237 0 0 3 1 G 1 7 3 S C S TH O M S O N l iL [ iC T G » 0 gS r B F Y 76 S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIER DESCRIPTIO N The BFY76 is a silicon planar epitaxial NPN trans­ istor in Jedec TO-18 metal case. It is designed for use in high performance, low-level, low-noise am­


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    bfy760q31d20 PDF

    BFY76

    Contextual Info: BFY76 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products


    Original
    bfy76o206aa2-aug-02 PDF

    BSY73

    Abstract: BSY89 BFY39 BSY41 BFX93 BFY76 BFY77 BSW19 BSW19A BSW20
    Contextual Info: T YPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers Pd mW 'c Im A I V C EO (V ) FE V C E (S A T ) min max •c Im A I V CE (V ) 0.01 0.01 5 5 BFX93 BFX93 N N TO-18 TO-18 300 300 30 30 45 45 40 100 120 300 BFY39 BFY76 BFY77 N N N TO-18 TO-18


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    bfx93bfy39bfy76bfy77+8bsw19bsw19absw20o-92fbsw20absy73bsy89bsy41 PDF

    IC350

    Contextual Info: BFY76 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products


    Original
    bfy76o206aa16-jul-02ic350 PDF

    BFY76

    Contextual Info: SGS-THOMSON B FY 76 R!tlD EæilLI(g'iri iD(SS LOW-LEVEL, LOW -NOISE AMPLIFIER D E S C R IP T IO N The BFY76 is asilicon planar epitaxial NPN transis­ tor in Jedec TO-18 metal case. It is designed for use in high performance, low-level, low-noise amplifier


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    bfy76 PDF

    bcy591x

    Abstract: 2N6429A 2N2196 2N2147 2N2214 2N2161 2SC538A BCW66RG 2N2207 BC521
    Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18


    Original
    bc382ksc10722sc538abcx59-9+11bcx70jbcy591xtbc337abcw66rg2n6429a2n21962n21472n22142n21612n2207bc521 PDF

    bfy76

    Contextual Info: BFY76 SILICON PLANAR NPN L O W -L E V E L , L O W -N OISE A M P L IF IE R Th e B F Y 76 is a silico n planar e p ita x ia l N P N tran sisto r in Je d e c T O - 1 8 m etal case. It is designed for use in h ig h -p e rfo rm a n ce , low level, lo w noise a m p lifie r c irc u its from a u d io to


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    bfy7690urce PDF

    bfy76

    Contextual Info: BFY76 LOW-LEVEL, LOW-NOISE AMPLIFIER DESCRIPTION The BFY76 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for use in high performance, low-level, low-noise amplifier circuits from audio to high frequencies. TO-18 INTERNAL SCHEMATIC DIAGRAM


    Original
    bfy76 PDF

    BCY59-9

    Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A
    Contextual Info: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0


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    2n7202n720a2n9122n2s09+142n23682n23692n2369a2n26152n26162n783bcy59-9bsx21 npn transistor2n120001-1202n160a2n9158sx212n719 PDF

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original
    2n7032n706c2n7082n709a+102n7172n718a2n719a2n720a2n7212n722aswitch npnbsy182n23692n4390 PDF

    BCY591

    Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
    Contextual Info: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings


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    bcy59-10bfy76bsx21bsx48+13bsy79cil351cil352bcy591bc109c pin configuration2n718 pin configuration2n706bc107cbcy59-7bc107c pin2n8152n25bc107 pin configuration PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    tda0161 equivalent1n3393bdx54f equivalentbyt301000+6bux transient voltage suppressorst90r9ua776mhsgs 2n3055transistor morocco mje13007inmos transputer reference manual PDF

    BCY79-9

    Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
    Contextual Info: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.


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    2n7062n706abcy79-9bcy79-10+11bfx37cf10323fl33cm000135tbcy791bcy591bsx21bc107cbc109c pin configuration2n718a2n720 PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149 PDF

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


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    bf195 equivalentbf1972n3680bf173+6transistor bf 175bc413bfy39bf256transistor bf194ke4416 PDF

    cs9011j

    Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
    Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •


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    2n15072n15662ni6132n1889+162n18902n18932n19732n19742ni975o-237cs9011jmps151pn5180mps4424bc56088c527-252n3304bc5568pn2897mps9633c PDF

    BSy38

    Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
    Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


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    2n7062n706a2n706b2n706c+142n7082n7432n743a2n74416npnbsy51bsy38motorola* 2n7082n1711 motoroladh3467cdbsy39sp3725sp3725qdbtch98 PDF

    BC140 equivalent

    Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
    Contextual Info: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF


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    2n721a2n722a2n1132a2n1132b+152n22172n22182n2218a500/5npnbsy51bc140 equivalentbcy342n328abcy31bcy59 equivalentbc109 motorolabcy25dh3725cnbc108c equivalent2n3133 motorola PDF

    BFY76

    Abstract: 2N930 BCY58 BCY59 BFX41 2N4033
    Contextual Info: r=7 SGS-THOMSON 1 MOtgiOEtLKBir^QRilOOi GENERAL PURPOSE & INDUSTRIAL SMALL SIGNAL TRANSISTORS PNP GENERAL PURPOSE TRANSISTORS - TO 39 v CEO hFE min/max «$ Type >c mA (V) v CE(sat) max î* lcflB (V) »T min *s Ptot (mA) (MHz) ‘off* (ns) (mW) 55 85/—


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    bfx412n930bfy76bcy59+2bcy582n4033 PDF