2N720 Search Results

2n871

Abstract: 2n 719a 2n720
Contextual Info: typ es 2M6SI, tmm. 7.nm. iwimk. 2N720A. 2N870, 2N871, 2MIÌIS -.»ftslBSÖ ¿KS&8.Ì N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 3 4 4 2 , M A Y 1 9 6 3 - R E V IS E D M A R C H 1973 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

2n706 transistor

Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l

2N720A

Contextual Info: 2N720A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N720AJ • JANTX level (2N720AJX)

Contextual Info: 2N720A Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N720AJ • JANTX level (2N720AJX) • JANTXV level (2N720AJV)

2N720A

Abstract: 2N720A JAN
Contextual Info: 2N720A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

Contextual Info: , iJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 2N720A HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N720A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications.

Contextual Info: 2N720A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N1893

Abstract: 2N720A 2N1893S Small-Signal
Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices Qualified Level JAN JANTX JANTXV 2N1893 2N1893S 2N720A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage RBE = 10 Ω

Contextual Info: 2N720A EPITAXIAL PLANAR NPN • HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N790A is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. s t c u d o ) r s

2n1833

Abstract: 2N720 n719 2N1890 2n871 2N698 2N719 2N1889 2N639
Contextual Info: TYPES 2N698, 2N639. 2N719, 2N719A, 2N720, 2N720A. 7.nm 2N871, 2N1889, 2N1890, 2N1893 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 3 4 4 2 , M A Y 1 9 6 3 - R E V I S E D M A R C H 1 9 7 3 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

Contextual Info: p semcofl ¿ 888888888 | M iwiHBBffi msssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. iiHiiftBHhr. 1 1 I I ^88888 % # 1 D a ta S h e e t No. 2 N 7 2 0 A $ sd L SEMICONDUCTORS G eneric Part Number: 2N720A Type 2N720A G eom etry 4500 Polarity NPN Qual Level: Pending

3SM diode

Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

Contextual Info: 30E d m o a a iG ^i h m l°l SGS-THOMSON 2N720A [RiflOOI^ ilLIOTri^®IMD gi s g s-Thom son HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N720A is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications.

2N1893

Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 182 Qualified Level Devices JAN JANTX JANTXV 2N1893 2N1893S 2N720A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage RBE = 10 Ω

2N1893

Abstract: 2N720A 2N1893S
Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices Qualified Level JAN JANTX JANTXV 2N1893 2N1893S 2N720A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage RBE = 10 Ω

2N720A

Contextual Info: 2N720A HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N720A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTEMAXIMUM RATINGS

2N720A

Contextual Info: 2N720A EPITAXIAL PLANAR NPN • HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N790A is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM

2n 699

Abstract: 2N698 2N719A 2N699 2n720
Contextual Info: TYPES 2N698, 2N699. 2N719. 2N719A, 2 N / 2 Q 2N720A 2H970 2N871. 2N1889. 2N1890. 2N1893 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 3 4 4 2 . M A Y 1 9 6 3 - R E V I S E D M A R C H 197 3 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTOR 2N720A TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO Collector Emitter Voltage

Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) VCE(sat) max VCE (V) (V) (A) fT min (MHz) Cob COMPLE­ max MENTARY TYPE (PF) 2N720A 2N721 2N91I 2N956 2N1132 N P N N P TO-18 TO-18 TO-18

transistor PT 4500

Abstract: 2N72 2N720A
Contextual Info: Data Sheet No. 2N720A Generic Part Number: 2N720A Type 2N720A Geometry 4500 Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/182 Features: • • • • General-purpose low-power NPN transistor. Housed in a TO-18 case. Also available in chip form using

MIL-S-19500

Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Contextual Info: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S